BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Drain SOT-23 D Gate Top View Maximum Ratings S G Source Equivalent Circuit Top View @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 20KΩ Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current Thermal Characteristics Symbol VDSS VDGR VGSS ID IDM Continuous Continuous Value -50 -50 ±20 -130 -1.2 Units V V V mA A Value 300 417 -55 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Symbol PD RθJA TJ, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS -50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -15 -60 -100 µA µA nA ±10 nA VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V V Test Condition Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time IGSS ⎯ ⎯ ⎯ ⎯ VGS(th) RDS (ON) gFS -0.8 ⎯ 0.05 ⎯ ⎯ ⎯ -2.0 10 ⎯ V Ω S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ 10 18 ⎯ ⎯ ns ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. Halogen and Antimony Free. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS84 Document number: DS30149 Rev. 14 - 2 1 of 4 www.diodes.com February 2010 © Diodes Incorporated BSS84 -600 400 ID, DRAIN-SOURCE CURRENT (mA) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -500 -400 -300 -200 -100 0 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 25 -1 -2 -3 -4 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs. Drain-Source Voltage -1.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) 10 ID, DRAIN-CURRENT (A) -0.8 -0.6 -0.4 -0.2 0.0 0 9 8 7 6 5 4 3 2 TA = 125°C 1 0 -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage 15 TA = 25°C 0 -2 -3 -4 -5 VGS, GATE-SOURCE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage -1 25.0 VGS = -10V ID = -0.13A RDS(ON), ON-RESISTANCE (Ω) RDS(ON), ON-RESISTANCE (Ω) 12 9 6 3 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance vs. Junction Temperature BSS84 Document number: DS30149 Rev. 14 - 2 2 of 4 www.diodes.com 20.0 15.0 10.0 5.0 0.0 0.0 -0.2 -0.4 -0.6 -0.8 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -1.0 February 2010 © Diodes Incorporated BSS84 Ordering Information (Note 5) Part Number BSS84-7-F Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K84 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) YW K84 Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code J K L M N P R S T U V W X Y Z Month Code Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D Package Outline Dimensions A SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D F J L G Suggested Pad Layout Y Z C X BSS84 Document number: DS30149 Rev. 14 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 3 of 4 www.diodes.com February 2010 © Diodes Incorporated BSS84 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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