Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V(BR)DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery Low RDS(on) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish-Matte Tin. Weight: 0.08 grams (approximate) • • • Load switch Portable applications Power Management Functions Drain SOT23 D Body Diode Gate Gate Protection Diode S G Equivalent Circuit Top View ESD PROTECTED TO 2kV Source Top View Pin-Out Ordering Information (Note 3) Part Number DMN3730U-7 Notes: Marking N3U Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposefully added lead Marking Information Date Code Key Year Code Month Code 2011 Y Jan 1 YM N3U 2012 Z Feb 2 http://www.twtysemi.com Mar 3 N3U = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 [email protected] 2014 B Jun 6 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D 1 of 3 Product specification DMN3730U Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Value 30 ±8 Unit V V ID 0.94 0.68 0.75 A IDM 10 A Symbol Value 0.45 0.71 275 177 -55 to +150 Unit W W °C/W °C/W °C TA = 25°C (Note 5) TA = 85°C (Note 5) TA = 25°C (Note 4) Steady State Continuous Drain Current Symbol VDSS VGSS Pulsed Drain Current (Note 6) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 4) (Note 5) (Note 4) (Note 5) Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: PD RθJA TJ, TSTG 2. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 3. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper 4. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. http://www.twtysemi.com [email protected] 2 of 3 Product specification DMN3730U R(t), TRANSIENT THERMAL RESISITANCE 1 r(t) @ D=0.5 r(t) @ D=0.9 r(t) @ D=0.3 0.1 r(t) @ D=0.7 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.01 0.01 r(t) @ D=0.01 R θJA (t) = r(t)*R θJA R θJA = 176C/W Duty Cycle, D = t1/t2 r(t) @ D=0.005 r(t) @ D=Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 10 100 1000 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 3 V μA μA VGS = 0V, ID = 10μA VDS = 30V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.45 - V Static Drain-Source On-Resistance (Note 7) RDS(on) - - |Yfs| VSD 40 - 0.7 0.95 460 560 730 1.2 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 100mA VGS = 1.8V, ID = 75mA VDS = 3V, ID = 10mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 64.3 6.1 4.5 70 1.6 0.2 0.2 3.5 2.8 38 13 - Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ mS V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω 5. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2% 6. For design aid only, not subject to production testing. http://www.twtysemi.com [email protected] 3 of 3