DN6848 4.5±0.3 1.0 4.0±0.3 Hall IC (Operating Temperature Range Topr = – 40 to +100˚C, Operating in One 0.8±0.1 ■ Overview 0.43 – 0.05 1 2 3 1 : VCC 2 : GND 3 : Output 5˚ 5˚ 2˚ 2˚ SSIP003-P-0000A (E-3S) DN6848SE Unit : mm 4.52±0.3 perature compensator Wide operating supply voltage range (VCC=4.5 to 16V) Operating in one way magnetic field TTL and MOS ICs directly drivable by output Output open collector 0.55±0.15 (1.0) • High sensitivity and low drift • Stable temperature characteristics due to the additional tem- 0.4±0.1 2˚ 45˚ 12.5±06.5 (1.0) ■ Features (0.72) (0.4) 1.27 2 to 5˚ ■ Applications 1.54±0.1 1 2 3 • Speed sensors • Position sensors • Rotation sensors • Keyboard switches • Microswitches 1 : VCC 2 : GND 3 : Output 2˚ R0.25 SSIP003-P-0000 (SE-3S) Unit : mm (0.6) DN6848TE 4.0±0.3 ■ Block Diagram 10.0±0.6 (1.0) (1.0) Note) This IC is not suitable for car electrical equipments. 0.6±0.15 · DN6848/SE/TE 0.5±0.1 1.27 Stabilized Power Supply Temperature Correction Circuit 1 VCC 3 Output (0.7) 3.3±0.3 • • • • + 0.1 0.5±0.1 1.27 4.52±0.3 The DN6848/SE/TE/S is a combination of a Hall element, amplifier, Schmitt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier, converts into a digital signal through the Schmitt circuit, and drives the TTL or MOS IC directly. Unit : mm 5˚ 10.5±0.5 Way Magnetic Field) 2.0±0.3 0.7 DN6848/SE/TE/S 1.2±0.1 (0.2) 1 2 3 1 : VCC 2 : GND 3 : Output SSIP003-P-0000B (TE-3S) Unit : mm 2 3 Stabilized Power Supply Temperature Correction Circuit 1 VCC 3 Output 0.3 to 0.5 3.0±0.3 5.4±0.4 4 Hall Element Amp. Schmitt Trigger Output Stage GND ESOP004-P-0200 (SOH-4D) 1.5±0.3 NC 2 or GND 0.4±0.2 · DN6848S 0.15 0 to 0.1 0.95±0.2 GND Schmitt Trigger Output Stage 0.6±0.2 Amp. 4 1.6 2 Hall Element 1 3.0±0.3 DN6848S 1 : VCC 2 : NC or GND 3 : Output 4 : GND ■ Absolute Maximum Ratings (Ta=25˚C) Symbol Rating Supply voltage Parameter VCC 18 Unit V Supply current ICC 8 mA Circuit current IO 20 mA Power dissipation PD 150 mW Operating ambient temperature Topr –40 to +100 ˚C Storage temperature Tstg –55 to +125 ˚C ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Operating flux density Condition min typ max B1 (L to H) VCC=12V 0.5 9 21 B2 (H to L) VCC=12V 1.5 11 22 1 2 Hysteresis width BW Low output voltage VOL High output current IOH Supply current ICC VCC=12V VCC=16V, IO=12mA, B=22mT VCC=4.5V, IO=12mA, B=22mT VCC=4.5 to 16V VO=16V, B=0mT Unit mT mT mT 0.4 V 0.4 V 10 µA VCC=16V 6 mA VCC=4.5V 5.5 mA ■ Hall Element Position 1.0 1.5 1. 0 1.0 1.63 1.15 1.5 1.0 1.25 1.0 1.3 1.0 0 1. 1.0 1.75 Unit : mm The center of the Hall element is in the hatched area in the right figure. 1.5 Distance from package surface to sensor (mm) DN6848 DN6848SE DN6848TE DN6848S 0.7 0.42 0.4 0.65 ■ Flux-Voltage Conversion Characteristics Output voltage (VO) Marking surface Applied flux direction B1 Flux density (B) B2 ■ Precaution on Use 1. Change of the operation magnetic flux density does not depend on the supply voltage, because the stabilization power supply is built-in. (only for the range ; VCC= 4.5 to 16V) 2. Change from “H” to “L” level increases the supply current by approx. 1mA. ■ Characteristics Curve Supply voltage – Ambient temperature Operating flux density – Ambient temperature 22.5 Operating flux density (mT) Supply current (mA) 7 6 5 VCC = 16V 4 VCC = 4.5V 3 2 1 0 –50 –25 0 25 50 75 100 Output low level voltage – Ambient temperature 100 Output “L” level voltage (mV) 20.0 20.0 VCC = 4.5 to 16V BH→L Ta =25˚C 17.5 le 1 Samp 17.5 15.0 Sam 12.5 10.0 ple 2 Sample 3 Sample 4 7.5 5.0 VCC =12V IO =12mA 80 70 60 50 40 30 20 10 0 –50 –25 0 25 50 75 100 125 Ambient temperature (˚C) 15.0 12.5 10.0 7.5 5.0 2.5 2.5 Ambient temperature (˚C) 90 Operating flux density – Supply voltage 25.0 Operating flux density (mT) 8 –50 –25 0 25 50 75 100 Ambient temperature (˚C) 0 0 2 4 6 8 10 12 14 16 18 20 Supply voltage (V)