ETC DN6848/SE/S

DN6848
4.5±0.3
1.0
4.0±0.3
Hall IC (Operating Temperature Range
Topr = – 40 to +100˚C, Operating in One
0.8±0.1
■ Overview
0.43 – 0.05
1 2 3
1 : VCC
2 : GND
3 : Output
5˚
5˚
2˚
2˚ SSIP003-P-0000A (E-3S)
DN6848SE
Unit : mm
4.52±0.3
perature compensator
Wide operating supply voltage range (VCC=4.5 to 16V)
Operating in one way magnetic field
TTL and MOS ICs directly drivable by output
Output open collector
0.55±0.15
(1.0)
• High sensitivity and low drift
• Stable temperature characteristics due to the additional tem-
0.4±0.1
2˚
45˚
12.5±06.5
(1.0)
■ Features
(0.72)
(0.4)
1.27
2 to 5˚
■ Applications
1.54±0.1
1 2 3
• Speed sensors
• Position sensors
• Rotation sensors
• Keyboard switches
• Microswitches
1 : VCC
2 : GND
3 : Output
2˚
R0.25
SSIP003-P-0000 (SE-3S)
Unit : mm
(0.6)
DN6848TE
4.0±0.3
■ Block Diagram
10.0±0.6
(1.0)
(1.0)
Note) This IC is not suitable for car electrical equipments.
0.6±0.15
· DN6848/SE/TE
0.5±0.1
1.27
Stabilized Power Supply
Temperature Correction Circuit
1
VCC
3
Output
(0.7)
3.3±0.3
•
•
•
•
+ 0.1
0.5±0.1
1.27
4.52±0.3
The DN6848/SE/TE/S is a combination of a Hall element,
amplifier, Schmitt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the
IC technology. It amplifies Hall element output at the amplifier, converts into a digital signal through the Schmitt circuit,
and drives the TTL or MOS IC directly.
Unit : mm
5˚
10.5±0.5
Way Magnetic Field)
2.0±0.3
0.7
DN6848/SE/TE/S
1.2±0.1
(0.2)
1 2 3
1 : VCC
2 : GND
3 : Output
SSIP003-P-0000B (TE-3S)
Unit : mm
2
3
Stabilized Power Supply
Temperature Correction Circuit
1
VCC
3
Output
0.3 to 0.5
3.0±0.3
5.4±0.4
4
Hall Element
Amp.
Schmitt Trigger Output Stage
GND
ESOP004-P-0200 (SOH-4D)
1.5±0.3
NC
2
or
GND
0.4±0.2
· DN6848S
0.15
0 to 0.1
0.95±0.2
GND
Schmitt Trigger Output Stage
0.6±0.2
Amp.
4
1.6
2
Hall Element
1
3.0±0.3
DN6848S
1 : VCC
2 : NC or GND
3 : Output
4 : GND
■ Absolute Maximum Ratings (Ta=25˚C)
Symbol
Rating
Supply voltage
Parameter
VCC
18
Unit
V
Supply current
ICC
8
mA
Circuit current
IO
20
mA
Power dissipation
PD
150
mW
Operating ambient temperature
Topr
–40 to +100
˚C
Storage temperature
Tstg
–55 to +125
˚C
■ Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Operating flux density
Condition
min
typ
max
B1 (L to H)
VCC=12V
0.5
9
21
B2 (H to L)
VCC=12V
1.5
11
22
1
2
Hysteresis width
BW
Low output voltage
VOL
High output current
IOH
Supply current
ICC
VCC=12V
VCC=16V, IO=12mA,
B=22mT
VCC=4.5V, IO=12mA,
B=22mT
VCC=4.5 to 16V
VO=16V, B=0mT
Unit
mT
mT
mT
0.4
V
0.4
V
10
µA
VCC=16V
6
mA
VCC=4.5V
5.5
mA
■ Hall Element Position
1.0 1.5
1.
0
1.0 1.63
1.15
1.5
1.0
1.25
1.0
1.3
1.0
0
1.
1.0 1.75
Unit : mm
The center of the Hall
element is in the hatched
area in the right figure.
1.5
Distance from package
surface to sensor (mm)
DN6848
DN6848SE
DN6848TE
DN6848S
0.7
0.42
0.4
0.65
■ Flux-Voltage Conversion Characteristics
Output voltage (VO)
Marking surface
Applied flux direction
B1
Flux density (B)
B2
■ Precaution on Use
1. Change of the operation magnetic flux density does not depend on the supply voltage, because the stabilization
power supply is built-in. (only for the range ; VCC= 4.5 to 16V)
2. Change from “H” to “L” level increases the supply current by approx. 1mA.
■ Characteristics Curve
Supply voltage – Ambient temperature
Operating flux density – Ambient temperature
22.5
Operating flux density (mT)
Supply current (mA)
7
6
5
VCC = 16V
4
VCC = 4.5V
3
2
1
0
–50 –25
0
25
50
75 100
Output low level voltage – Ambient temperature
100
Output “L” level voltage (mV)
20.0
20.0
VCC = 4.5 to 16V
BH→L
Ta =25˚C
17.5
le 1
Samp
17.5
15.0
Sam
12.5
10.0
ple 2
Sample
3
Sample
4
7.5
5.0
VCC =12V
IO =12mA
80
70
60
50
40
30
20
10
0
–50 –25
0
25
50
75 100 125
Ambient temperature (˚C)
15.0
12.5
10.0
7.5
5.0
2.5
2.5
Ambient temperature (˚C)
90
Operating flux density – Supply voltage
25.0
Operating flux density (mT)
8
–50 –25
0
25
50
75 100
Ambient temperature (˚C)
0
0
2
4
6
8 10 12 14 16 18 20
Supply voltage (V)
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2001 MAR