DN8899 4.5±0.3 1.0 4.0±0.3 Hall IC (Operating Temperature Range Topr=–40 to+ 100˚C, 0.8±0.1 ■ Overview 0.43 – 0.05 1 2 3 5˚ 5˚ 1 : VCC 2 : GND 3 : Output 2˚ 2˚ SSIP003-P-0000A (E-3S) DN8899SE Unit : mm • High sensitivity and low drift • Stable temperature characteristics due to the additional tem- (1.0) 0.55±0.15 • Wide operating supply voltage range(VCC=4.5 to 16V) • Operating in alternative magnetic field • TTL and MOS ICs directly drivable by output • Semipermanent service life due to no contact parts • Small change of the operating flux density against mechanical stress 0.4±0.1 • Output open collector • “0” gauss point in the zero cross type hysteresis width 2˚ (1.0) 4.52±0.3 4.52±0.3 ■ Features perature compensator +0.1 0.5±0.1 1.27 12.5±06.5 The DN8899/SE/TE/S is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier, converts into a digital signal through the Schmidt circuit, and drives the TTL or MOS IC directly. 45˚ (0.72) (0.4) 1.27 2 to 5˚ 1.54±0.1 1 2 3 ■ Applications 2˚ R0.25 SSIP003-P-0000C (SE-3S) • Speed sensors • Position sensors • Rotation sensors • Keyboard switches • Microswitches Unit : mm 5˚ 10.5±0.5 Operating in Alternative Magnetic Field) 2.0±0.3 0.7 DN8899/SE/TE/S 1 : VCC 2 : GND 3 : Output DN8899TE (0.6) Unit : mm (1.0) ■ Block Diagram 10.0±0.6 (1.0) Note) This IC is not suitable for the car electric equipment. (0.7) 3.3±0.3 4.0±0.3 0.6±0.15 · DN8899/SE/TE 2 GND 1 2 3 1 : VCC 2 : GND SSIP003-P-0000B (TE-3S) 3 : Output DN8899S 4 2 3 Schmitt Trigger Output Stage 0.95±0.2 Amp. 0.6±0.2 Hall Element Unit : mm 1 · DN8899S NC or GND Stabilized Power Supply Temperature Correction Circuit 2 1 VCC 3 Output 0.3 to 0.5 3.0±0.3 5.4±0.4 4 Hall Element Amp. Schmitt Trigger Output Stage GND 3.0±0.3 Output 1.2±0.1 (0.2) 1.5±0.3 3 0.5±0.1 1.27 0.4±0.2 VCC 1.6 1 0.15 0 to 0.1 Stabilized Power Supply Temperature Correction Circuit 1 : VCC 2 : NC or GND 3 : Output ESOP004-P-0200 (SOH-4D) 4 : GND ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Rating Unit Supply voltage VCC 18 V Supply current ICC 8 mA Circuit current IO 20 mA Power dissipation PD 150 mW Operating ambient temperature Topr –40 to +100 ˚C Storage temperature Tstg –55 to +125 ˚C ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Operating flux density Condition min typ max Unit B1 (L→H) VCC=12V –12 –6 – 0.1 mT B2 (H→L) VCC=12V 0.1 6 12 mT 7 10 Hysteresis width BW Low output voltage VOL High output current IOH Supply current ICC VCC=12V VCC=4.5 to 16V, IO=12mA, B=12mT VCC=4.5 to 16V, VO=16V, B=–12mT mT 0.4 V 10 µA VCC=16V 6 mA VCC=4.5V 5.5 mA ■ Hall Element Position · DN8899SE · DN8899S 1.0 1.5 1. 1.15 1.5 1.0 1.25 1.0 1.3 1.0 0 Unit : mm The center of the Hall element is in the hatched area in the right figure. · DN8899TE 1.0 1.63 1. 1.0 1.75 0 · DN8899 1.5 Distance from package surface to sensor (mm) DN8899 DN8899SE DN8899TE DN8899S 0.7 0.42 0.4 0.65 ■ Flux-Voltage Conversion Characteristics Output voltage (VO) Marking surface Applied flux direction B1 Flux density (B) B2 ■ Supplementary Descriptions 1. Change of the operation magnetic flux density dose not depend on the supply voltage, because the stabilization power supply is built in. (only for the range ; VCC=4.5 to 16V) 2. Change from “H” to “L” level increases the supply current by approx. 1mA. ■ Characteristics Curve Supply Voltage – Ambient Temperature Operating Flux Density – Ambient Temperature Operating Flux Density – Supply Voltage 8 VCC=12V VCC=16V 5 4 VCC=4.5V 3 2 1 –50 –25 0 25 50 75 100 125 Output Low Level Voltage – Ambient Temperature 100 Output “L” Level Voltage (mV) to L Sample 1, BH Sample 2, BH to L 10 Sample 3, B H to L 0 H Sample 1, BL to Sample 2, BL to H Sample 3, BL –10 to H –20 Ambient Temperature (˚C) 90 20 VCC=12V IO=12mA 80 70 60 50 40 30 20 10 0 –50 –25 0 25 50 75 100 125 Ambient Temperature (˚C) Operating Flux Density (mT) Operating Flux Density (mT) Supply Current (mA) 6 0 Ta=25˚C 20 7 BH to L 10 0 BL to H –10 –20 –50 –25 0 25 50 75 100 125 Ambient Temperature (˚C) 0 2 4 6 8 10 12 14 16 18 20 Supply Voltage (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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