PURE-GREEN Item No.: 161230 1. This specification applies to AlInGaP / GaAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy or Al Au alloy p-Electrode Epitaxy AlInGaP 120 250 160 n-Substrate GaAs n-Electrode 250 Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions Forward voltage VF IF = 20 mA Reverse current IR VR = 4 V Luminous intensity * IV IF = 20 mA min max Unit 2,20 2,50 V 100 dom. wavelength λD IF = 20 mA Brightness measurement at OSA on gold plate 5. typ µA 11,0 mcd 560 nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]