RED Item No.: 190150 1. This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy n-Electrode n-Epitaxy GaAlAs 120 265 Active Layer 150 p-Epitaxy GaAlAs p-Electrode 265 Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions Forward voltage Reverse current VF IR IF = 20 mA VR = 5 V Luminous intensity * IV tR tf IF = 20 mA Switching time min 12 IF = 20 mA Peak wavelength IF = 20 mA λP Brightness measurement at OSA on gold plate 5. typ max Unit 1,90 2,30 10 V 16 50 35 635 µA mcd ns nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]