PURE-GREEN Item No.: 161210 1. This specification applies to GaP / GaP LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-Epitaxy GaP n-Epitaxy GaP 120 265 n-Epitaxy GaP 270 n-Substrate GaP 265 n-Electrode Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions VF IR IF = 20 mA VR = 5 V Forward voltage Reverse current min typ max Unit 2,30 2,60 10 V Luminous intensity * IV IF = 20 mA 1,4 2,0 Peak wavelength IF = 20 mA 557 λP * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. µA mcd nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]