ROHM DTA123JEB

-100mA / -50V Digital transistors
(with built-in resistors)
DTA123JEB
zDimensions (Unit : mm)
zApplications
Inverter, Interface, Driver
EMT3F
zFeatures
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making the device design easy.
1.6
0.7
0.45
(3)
(1)
0.5 0.5
1.0
(1) IN
(2) GND
(3) OUT
0.45
0.37
1.6
0.86 0.37
0.26
(2)
0.13
Each lead has same dimensions
Abbreviated symbol : E32
zEquivalent circuit
zStructure
PNP silicon epitaxial planar transistor type
(Resistor built-in)
OUT
R1
IN
R2
zPackaging specifications
GND(+)
Package
EMT3F
Packaging type
Taping
Part No.
OUT
IN
TL
Code
Basic ordering unit (pieces)
GND(+)
3000
DTA123JEB
R1=2.2kΩ, R2=47kΩ
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
Supply voltage
VCC
−50
Input voltage
VIN
−12 to +5
V
−100
mA
Collector current
Ic(max)
Output current
Io
Power dissipation
PD
∗1
∗2
−100
mA
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.03 - Rev.B
DTA123JEB
Data Sheet
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Input voltage
Output voltage
Min.
Typ.
Max.
Unit
Conditions
VI(off)
−
−
−500
mV
VI(on)
−1.1
−
−
V
VO=−0.3V, IO=−5mA
VO(on)
−
−100
−300
mV
IO/II=−5mA/−0.25mA
VCC=−5V, IO=−100µA
II
−
−
−3.6
mA
VI=−5V
IO(off)
−
−
−500
nA
VCC=−50V, VI=0V
DC current gain
GI
80
−
−
−
Transition frequency
fT ∗
−
250
−
MHz
Input current
Output current
VO=−5V, IO=−10mA
VCE=−10V, IE=5mA, f=100MHz
Input resistance
R1
1.54
2.2
2.86
kΩ
−
Resistance ratio
R2/R1
17
21
26
−
−
∗ Characteristics of built-in transistor
zElectrical characteristic curves
−100
−10
−5
Ta=−40°C
25°C
100°C
−1
−500m
−1m
−500µ
Ta=100°C
25°C
−40°C
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−200m
−100m
−100µ −200µ −500µ −1m −2m
VCC=−5V
−2m
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
−20
−2
−10m
−5m
VO=−0.3V
−50
−2µ
−1µ
0
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
1k
50
20
10
5
2
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
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c 2009 ROHM Co., Ltd. All rights reserved.
○
−2.5
−3.0
lO/lI=20
−500m
Ta=100°C
25°C
−40°C
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
−2.0
−1
VO=−5V
100
−1.5
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
200
−1.0
INPUT VOLTAGE : VI(off) (V)
500
Ta=100°C
25°C
−40°C
−0.5
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
2/2
2009.03 - Rev.B
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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