ROHM DTA144EUA

-100mA / -50V Digital transistors
(with built-in resistors)
DTA144EB / DTA144EM / DTA144EE / DTA144EUA / DTA144EKA
zDimensions (Unit : mm)
zApplications
Inverter, Interface, Driver
DTA144EB
0.22
0.1
zFeatures
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see the equivalent circuit).
0.16
0.1
1.0
0.8
(3)
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
(1)
(2)
0.37
0.17
0.35
0.6
ROHM : VMN3
(1) IN
(2) GND
(3) OUT
Abbreviated symbol : 16
DTA144EM
3) Only the on / off conditions need to be set for operation,
making the device design easy.
0.2
1.2
0.32
0.8
1.2
(3)
0.2
(1)(2)
0.22
0.4 0.4
zStructure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
0.13
0.5
(1) IN
(2) GND
(3) OUT
0.8
ROHM : VMT3
Abbreviated symbol : 16
DTA144EE
0.7
1.6
0.55
0.3
0.8
VMT3
EMT3
UMT3
SMT3
Taping
Taping
Taping
Taping
Taping
(2)
(1)
0.2
0.2
0.15
0.5 0.5
Basic ordering
unit (pieces)
Type
T2L
TL
T106
T146
ROHM : EMT3
8000
DTA144EB
8000
3000
3000
3000
−
−
−
−
−
−
−
−
−
DTA144EM
−
DTA144EE
−
−
DTA144EUA
−
−
−
DTA144EKA
−
−
−
Abbreviated symbol : 16
DTA144EUA
2.0
0.9
0.2
0.3
−
0.7
(3)
−
(1)
(2)
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
zEquivalent circuit
0.15
1.3
Abbreviated symbol : 16
DTA144EKA
0.4
IN
(1) GND
(2) IN
(3) OUT
1.1
2.9
OUT
R1
(1) GND
(2) IN
(3) OUT
1.0
2.1
T2L
1.25
Code
0.1Min.
VMN3
Packaging type
0.1Min.
Package
1.6
(3)
zPackaging specifications
0.8
(3)
1.6
2.8
R2
GND (+)
(2)
0.15
ROHM : SMT3
EIAJ : SC-59
GND (+)
1.9
0.3Min.
(1)
0.95 0.95
OUT
IN
(1) GND
(2) IN
(3) OUT
Abbreviated symbol : 16
R1=R2=47kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.03 - Rev.B
DTA144EB / DTA144EM / DTA144EE / DTA144EUA / DTA144EKA
Data Sheet
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
DTA144EB DTA144EM DTA144EE DTA144EUA DTA144EKA
Unit
Supply voltage
VCC
−50
V
Input voltage
VIN
−40 to +10
V
IO
−30
IC(Max.)
−100
Output current
Power dissipation
Pd
mA
150
mW
200
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
Output voltage
Input current
Output current
Typ.
Max.
VI(off)
−
−
−0.5
Unit
VI(on)
−3.0
−
−
V
VO=−0.3V, IO=−2mA
VO(on)
−
−0.1
−0.3
V
IO / II=−10mA / −0.5mA
II
−
−
−0.18
mA
VI=−5V
IO(off)
−
−
−0.5
µA
VCC=−50V, VI=0V
VO=−5V, IO=−5mA
DC current gain
GI
68
−
−
−
Input resistance
R1
32.9
47
61.1
kΩ
Resistance ratio
R2/R1
fT ∗
0.8
1
1.2
−
−
250
−
MHz
Transition frequency
Conditions
VCC=−5V, IO=−100µA
−
−
VCE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor
zElectrical characteristic curves
−100
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
−20
−10
−5
−10m
VCC=−5V
−5m
VO=−0.3V
−50
Ta=−40°C
25°C
100°C
−2
−1
−500m
−200m
−100m
−100µ −200µ −500µ −1m −2m
−2m
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
−1µ
0
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
1k
50
20
10
5
−1.5
−1
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
100
−1.0
−2.0
−2.5
−3.0
Fig.2 Output current vs. input voltage
(OFF characteristics)
VO=−5V
Ta=100°C
25°C
−40°C
−0.5
INPUT VOLTAGE : VI(off) (V)
500
200
Ta=100°C
25°C
−40°C
−1m
−500µ
−500m
−200m
lO/lI=20
Ta=100°C
25°C
−40°C
−100m
−50m
−20m
−10m
−5m
−2m
2
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
−1m
−100µ −200µ -−500µ −1m −2m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
2/2
2009.03 - Rev.B
Notice
Notes
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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R0039A