ETC ECM018

PRELIMINARY DATA SHEET
ECM018
Korea Band PCS
3.5V POWER AMPLIFIER MODULE
Features
Features
Korea PCS CDMA
Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery
28.0 dBm CDMA Power
35% CDMA Efficiency
Power-down Capability
Quiescent Current Control
Wide Range Vref/pd
Low Ipd, Typically 1 mA
Better Efficiency at Low Power
Temperature compensation circuit for Icq
Applications
Description
3.5 V PCS Handsets
The ECM018 is a power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own
InGaP Heterojunction Bipolar Transistor (HBT) process. It is optimized for the Korea PCS in the 1750MHz to 1780MHz
band. It operates from a positive voltage (3 - 4V Vcc) and includes a power-down feature. The input and output are both
matched to 50Ω. It is housed in a 6 X 6 mm Land Grid Array package. A Q control pin switches the quiescent current to
50mA for low output power range.
Electrical Specifications
o
Test Conditions: Ta = 25 C, VCC = +3.5 V, VREF / PD (reference / power-down voltage) = +2.9 V, F = 1750 to 1780 MHz
SYMBOL
LIMITS
PARAMETER
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Frequency
1750
1780
MHz
Gain (CDMA Modulation)
25
27
dB
Output Power (CDMA)
NOTE 1
28
dBm
Adjacent Channel Power Rejection
NOTE 2
-50
dBc
Power Added Efficiency (CDMA) @ 28.0 dBm
High Power Mode
35
%
Low Power Efficiency (CDMA) @ 16.0 dBm
Low Power Mode
9
%
Output Load Stability 6:1 All phase angles
-60
dBc
Tolerance for output VSWR Mismatch
No Damage
10:1
Quiescent
Current
(No
RF)
Low
Power Mode
ICQ
50
70
mA
Quiescent Current (No RF)
High Power Mode
ICQ
120
150
mA
Leakage Current (No RF) Vcc = 3.5V Vref = 0V
7
20
uA
Vref/pd Supply Current
Ipd
1
mA
Vref/pd Supply Voltage
VREF/ PD
2.9
V
Supply
Voltage
Vcc
3.2
3.5
4.2
V
Vq Voltage (High Power Mode)
Vq
0.0
0.8
V
Vq Voltage (Low Power Mode)
Vq
2.0
2.9
V
Input Return Loss
IRL
10
dB
Noise Figure
NF
5
dB
Noise Power
-136
-134
dBm/Hz
Harmonics, 2f, 3f, 4f
-40
dBc
Power Down On/Off Time
TON/OFF
<100
ns
Switching time between output power levels
Thi/Low
6
usec
NOTE 1: Using Application Schematic. Tuned for CDMA.
NOTE 2: @ 1.25MHz offset, Pri. Ch. bandwidth =1.23MHz, Adj. Ch. bandwidth = 30KHz Pout ≤ 28dBm, High/Low mode
F
G
P
ACPR
PAE1
PAE2
SS-000446-000
Revision C
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
1
PRELIMINARY DATA SHEET
ECM018
Korea Band PCS
3.5V POWER AMPLIFIER MODULE
TOP VIEW
X
X3
X3
X2
X2
X1
BOTTOM SIDE
GROUND PAD
X1
SYMBOL
X
1
Y2
CL
Y1
X1
X2
X3
Y
Y1
Y2
Y3
Y4
7
8
Y4
2
Y
CL
6
Y3
Y2
Y1
3
4
5
ENGLISH
inch .004
.232
.055
.095
.116
.232
.095
.116
.055
.150
METRIC
mm 0.1
5.89
1.40
2.41
2.95
5.89
2.41
2.95
1.40
3.81
BOTTOM SIDE PAD
.036" x .030"
(.91mm x .76mm)
.062" +/- .004"
(1.57 mm +/-0.10 mm)
.232" +/- 0.004"
(5.89mm +/- 0.1mm)
.232" +/- 0.004"
(5.89mm +/- 0.1mm)
PIN 1 INDICATOR
EiC xxxx
ECM018
XXXX XXXX
LOT NUMBER
PINOUT
PIN 1 Vcc1
PIN 2 RFin
PIN 3 Vpd
PIN 4 Vq
PIN 5 Vcc2
PIN 6 RFout
PIN 7 Gnd
PIN 8 Gnd
TOP VIEW WITH MARKING DIAGRAM
SS-000446-000
Revision C
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
2
PRELIMINARY DATA SHEET
ECM018
Korea Band PCS
3.5V POWER AMPLIFIER MODULE
PCB LAYOUT
1. The front side of the pcb ground area under the
PAM requires the use of multiple vias to provide
low thermal resistance to the backside of the pcb
ground.
EVAL BOARD
J3
J2
RFout
C7
C6
RFin
C4
C5
60-000481-000(1)
C9
C8
C1
C3
+
J1
Vpd Vq G Vcc
QTY
4
4
1
2
1
1
1
DESIGNATOR
C1, C4, C6, C8
C3, C5, C7, C9
C2
J2, J3
U1
--J1
VALUE
100pF
1.0uF
10 uF
ECM018
-------
C2
DESCRIPTION
CAPACITOR, 0603
CAPACITOR, 0603
CAPACITOR, 6032
SMA CONNECTOR
IC
26 GA, WIRE .5”
CONNECTOR, RT. ANG
PCB
MANUFACTURER &P/N
ROHM MCH185A101JK
ROHM MCH182F105ZK
PANASONIC ECS-HICC106R
CDI 5260CC
EiC Corp
ANY
SULLINS PZC04SGAN
EiC Corp 60-000481-000(1)
NOTE 1
NOTE 1
NOTE 1
NOTE 1
1. EiC RECOMMENDED COMPONENTS ARE SHOW. EQUIVALENT COMPONENTS MAY BE USED.
NOTES: UNLESS OTHERWISE SPECIFIED
SS-000446-000
Revision C
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
3
PRELIMINARY DATA SHEET
ECM018
Korea Band PCS
3.5V POWER AMPLIFIER MODULE
SCHEMATIC
SS-000446-000
Revision C
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
4
PRELIMINARY DATA SHEET
ECM018
Korea Band PCS
3.5V POWER AMPLIFIER MODULE
ECM018 Gain vs. Pout(Hi-Low)
30
Gain(dB)
1.75GHz, 25C
25
1.78GHz, 25C
1.75GHz, -40C
1.78GHz, -40C
1.75GHz, 85C
20
1.78GHz, 85C
15
0
5
10
15
20
25
30
35
Pout(dBm)
ECM018 PAE vs .Pout(Hi-Low)
100
90
80
1.75GHz, 25C
70
1.78GHz,25C
PAE
60
1.75GHz, -40C
50
1.78GHz, -40C
40
1.75GHz, 85C
30
1.78GHz, 85C
20
10
0
0
5
10
15
20
25
30
Pout(dBm)
SS-000446-000
Revision C
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
5
PRELIMINARY DATA SHEET
ECM018
Korea Band PCS
3.5V POWER AMPLIFIER MODULE
ECM018 ACPR vs .Pout(Hi-Low)
-40
-45
1.75GHz, 25C
ACPR(dBc)
-50
1.78GHz, 25C
-55
1.75GHz, -40C
-60
1.78GHz, -40C
1.75GHz, 85C
-65
1.78GHz, 85C
-70
-75
0
5
10
15
20
25
30
Pout(dBm)
SS-000446-000
Revision C
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
6
PRELIMINARY DATA SHEET
ECM018
Korea Band PCS
3.5V POWER AMPLIFIER MODULE
ECM018 Operating Principles and Key Features
ECM018 is a 6x6mm size Power Amplifier Module (PAM) for cellular band CDMA
(digital) and AMPS (analog) handset market..
The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded
modular package with a LGA signal pad.
I. In GaP HBT offers Reliability and Quality
EiCs proprietary InGaP HBT provides excellent reliability and is used in the
infrastructure industry. The InGaP HBT is inherently superior to AlGaAs HBT. The
surface defect density in InGaP is much lower than that of AlGaAs.
The HBT life test of EiC InGaP HBT has gone through 315oC junction
temperature and 50kA/cm2 for over 6000 hours (8 ½ months), translating to multi-million
hours lifetime or longer in the operation envelope [1]. This kind of robust performance is
far superior to conventional AlGaAs HBT.
The InGaP HBT PAM goes through a product burn-in test as well. A large
sample group, usually 100 pieces, goes through burn-in test at an ambient temperature
of 125 to 145 oC for 1000 hours. The FIT number is than calculated based upon the data
collected. The MTTF is simply 1/FIT, this MTTF should agree with the HBT life test
results.
The agreement between the MTTF of HBT from life test and the FIT is essential:
it validates both tests! If there is a large discrepancy [2], the quality claim may be
flawed.
Although handset applications do not have as stringent operating requirements
as the infrastructure market, the high reliability of InGaP HBT offers an assurance to the
user of a high quality product designed for high volume production.
II. InGaP HBT and Patent-pending Circuit Design Offers Low Temperature Variation
Current gain of InGaP HBT varies about 10% over –40 to +85oC range,
compared with 50% of AlGaAs HBT. This low gain variation over temperature, coupled
with the patent-pending circuit design approach, provides for more stable electrical
performance.
III. ECM018 Offers High Gain and Margin for Transmitter Chain Design
The typical gain of the ECM018 is 27dB. This high gain allows the driver
amplifier to run very linear which results in reduced current. Taking into account the 3dB
loss of the BPF in front of the PAM, the driver needs to deliver only 4dBm linear power.
The P1dB of the driver amplifier should be more than 10dBm.
SS-000446-000
Revision C
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
7
PRELIMINARY DATA SHEET
ECM018
Korea Band PCS
3.5V POWER AMPLIFIER MODULE
If a lower gain PAM is used, the driver needs to provide more power, at the expense of
more operation current and possible degradation in ACPR.
Therefore the ECM018 can replace a lower gain PAM, this allows the driver to
work at a lower output power and provide better ACPR, this improved performance
offers more design margin in the transmitter chain.
IV. Easy Shut Down and Low Leakage Current
The Vcc pin of the PAM is connected directly to the battery, therefore a shut down
FET is not required. A voltage is applied to the Vref pin, which then brings up the
quiescent current. A Q control pin switches the quiescent current to 50mA for the low
output power range. The low power range is below 16dBm; the high power range is
from 16dBm to full power.
Removing the voltage applied to Vref pin, the quiescent current will drop to a small
leakage current, typically <10uA. The low leakage current of the PAM allows for a
longer standby time for the phone.
V. General Application
The PAM requires a minimal number of external components. Both the input and
output are dc-blocked within the PAM as shown in the function diagram. The input pin is
connected to ground through a shunt inductor within the PAM.
ECM018 is designed with a low quiescent current of 50mA typical in the low
power mode. At full CDMA power of 28dBm, the operation current will be greater than
500mA. Therefore it is a “quasi class B” or “deep class AB” amplifier. The operation
current increases with output power.
CDMA signal has a time varying amplitude. The peak power is 4dB above the
average RF power (it can be more accurately defined by PDF, power density function).
As the peak power is clipped by the amplifier saturation power level, the distortion of the
signal will cause the ACPR to deteriorate rapidly. Therefore the P1dB (as tested by a
SINE wave) of the amplifier should be over 31dBm to provide good ACPR at 28 dBm of
output power.
A 100pF capacitor is required adjacent to the Vcc2 pin. In addition, a large
capacitor (>uF) is required. The CDMA signal has a time-varying amplitude; therefore
the PAM draws on operation current corresponding to the instantaneous demand by the
RF power. The large capacitor near-by is the electric charge reservoir, providing current
on demand. The long electrical path from battery behaves as a large inductor; the
instantaneous demand on current will cause a voltage drop, resulting in poor ACPR.
On the evaluation board, a large shunt capacitor is added to protect the Vref pin
from power supply over-voltage during ON/OFF. This is similar but different from the
ESD. Therefore the rise and fall time test of the power down feature needs to be tested
with the shunt capacitor on Vref pin removed.
SS-000446-000
Revision C
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
8
PRELIMINARY DATA SHEET
ECM018
Korea Band PCS
3.5V POWER AMPLIFIER MODULE
Conclusion
ECM018 offers high gain, low quiescent current, and a small footprint. The InGaP
technology provides excellent reliability and quality, assuring the phone set manufacturer
a high quality product designed for high volume production.
Reference
1. “InGaP HBTs offer Enhanced Reliability”, Barry Lin, Applied Microwave and Wireless.
pp 115-116, Dec. 2000
2.” Interaction of Degradation Mechanisms in Be-Doped GaAs HBTs”, Darrell Hill and
John Parsey, Digest GaAs IC Symposium, Oct., 2000. pp 241-244
APPLICATION NOTES
Please visit our website at www.eiccorp.com to view or download the following documents.
You may also call our Customer Service to request a hardcopy.
Document #
Description
AP-000513-000
Tape and Reel Specifications: PAMS
AP-000516-000
Application Note Index
SS-000446-000
Revision C
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
9