Photodiode EPD-280-0-0.3-5 11.04.2007 Preliminary rev. 01/07 Wavelength Type Technology Case UV-A – UV-C UV-lens SiC TO-39 + lens Description Chip Location Ø 9,14 Ø 6,35 Ø 6,35 5,08 Ø 8,33 -0,06 +0,11 9, 90 ± 0,45 0, 1 ± 0,03 8,60 Anode ± 1,0 + 0,01 ± 0,30 Applications Environmental technology, analytical techniques, medical applications, industrial sensors, inspecting and controlling of UV radiation as well as for more general purposes ± 2,10 0 0, 6,10 - 0,11 80 0, 13,5 Highly reliable photodiode with high spectral sensitivity in the UV range (220 nm - 380 nm), mounted in hermetically sealed TO-39 package with lens, especially useful for detection of minimal radiation power 5 45,0 0° Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit Active area / Effective active area A / Aeff 0.056/0.72 mm² Temperature coefficient of IPh TC(IPh) 0.1 %/K Operating temperature range Tamb -40 to +70 °C Storage temperature range Tstg -40 to +100 °C ϕ 70 deg. Typ Max Unit Acceptance angle at 50% Sλ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol IR = 100 µA VR 20 Dark current VR = 1 V ID 10 Peak sensitivity wavelength VR = 0 V λp 280 nm Responsivity at λP VR = 0 V Sλ 0.13 A/W Sensitivity range at 1% VR = 0 V λmin, λmax Spectral bandwidth at 50% VR = 0 V ∆λ0.5 80 Shunt resistance VR = 10 mV RSH 1 Noise equivalent power λ = 280 nm NEP Specific detectivity λ = 280 nm D* 7.9x1013 cm ⋅ Hz ⋅ W −1 VR = 0 V CJ 20 pF VR = 0 V Ee = 100 µW/cm² IPh 45 nA Breakdown voltage1) Junction capacitance Photo current at λ = 254 nm1,2) 1) 2) Min V 100 220 380 1.1x10 fA nm nm TΩ -15 W/ Hz for information only measured with Hg-LP UV-emitter as radiation source Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° RD (typ.) [TΩ] Quantity EPD-280-0-0.3-5 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-280-0-0.3-5 11.04.2007 Preliminary Typical responsivity to incident radiation, normalized to S @λ = 280 nm rev. 01/07 Short-circuit current vs. irradiance (typical) 2) 1,0 2 0,8 1 S hort-circuit current ( µ A ) Responsivity (arb. units) 10 0,6 0,4 10 0 10 -1 10 -2 10 0,2 -3 10 0,0 200 250 300 350 400 Wavelength [nm] -2 10 -1 10 0 10 2 Irradiance [mW/cm ] 1 10 2 10 Short-circuit current vs. ambient temperature Short-circuit current (arb. units) 1,04 1,00 0,96 0,92 -40 -20 0 20 40 Ambient temperature [°C] 60 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2