Photodiode EPD-740-5-0.5 19.11.2007 rev. 02 Wavelength Type Technology Case Infrared water clear AlGaAs/GaAs 5 mm plastic lens Description Selective photodiode mounted in standard 5 mm package without standoff. Narrow response range (740 nm peak) by means of integrated filter 9,15 5,75 - 0,3 1 2,54 0,8 - 0,4 Anode 1,5 Note: Special packages with standoff available on request Applications 0,6 - 0,2 36,5 ± 1,0 Optical communications, safety equipment, light barriers Ø5 Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit A 0.17 mm² Temperature coefficient of I D TC(ID) 5 %/K Operating temperature range Tamb -20 to +85 °C Storage temperature range Tstg -30 to +100 °C Tsld 260 °C ϕ 20 deg. Typ Max Unit Active area t ≤ 3 s, 3 mm from case Soldering Temperature Acceptance angle at 50% Sλ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min IR = 10 µA VR 5 Dark current VR = 5 V ID 40 Peak sensitivity wavelength VR = 0 V λp 740 nm Responsivity at λP VR = 0 V Sλ 0.5 A/W Spectral range at 10 % VR = 0 V λ0.5 Spectral bandwidth at 50% VR = 0 V ∆λ0.5 80 VR = 10 mV RSH 200 Breakdown voltage 1) Shunt resistance Noise equivalent power λ = 740 nm V 200 680 NEP 770 pA nm nm GΩ -15 W/ Hz 7.2x10 12 λ = 740 nm D* Junction capacitance VR = 0 V CJ 120 pF Switching time (RL = 50 Ω) VR = 5 V tr, tf 170 ns VR = 0 V Ee = 1mW/cm² IPh 2,5 µA Specific detectivity Photo-current at λP 1,2) 1) 2) cm ⋅ Hz ⋅ W −1 5.7x10 for information only Halogen lamp source with appropriate filter Labeling Type Lot N° RD (typ.) [GΩ] Quantity EPD-740-5-0.5 Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-740-5-0.5 19.11.2007 Short-circuit current vs. ambient temperature Typical responsivity spectrum 1,0 1,04 0,8 Short-circuit current (arb. units) rel. Responsivity (arb. units) rev. 02 0,6 0,4 1,00 0,96 0,2 0,0 600 650 700 750 800 0,92 -40 850 -20 0 Wavelength (nm) Dark Current vs. Temperature 20 40 Ambient temperature [°C] 60 Short-circuit current vs. irradiance (typical) 2) 100 3 10 UR = 5V TK = 1,05 times/K 2 Short-circuit current (µA) D ark C urrent (pA ) 10 1 10 1 10 0 10 -1 10 0,1 -2 10 -40 -20 0 20 40 60 80 100 120 -2 10 Temperature (°C) Spectral bandwith (∆λ0.5) vs. ambient temperature -1 10 0 10 2 Irradiance [mW/cm ] 1 10 2 10 Typical receiving pattern 100 rel. Responsivity (a.u.) Response bandwith (nm) 95 90 85 80 75 70 -20 -10 0 10 20 30 40 Ambient temperature [°C] 50 60 70 We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2