MCC ER1A THRU ER1M omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • • • 1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250°C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings • • • DO-214AA (SMBJ) (Round Lead) Operating Temperature: -50°C to +150°C Storage Temperature: -50°C to +150°C Maximum Thermal Resistance; 15 °C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ER1A ER1A 50V 35V 50V ER1B ER1B 100V 70V 100V ER1C ER1C 150V 105V 150V ER1D ER1D 200V 140V 200V ER1G ER1G 400V 280V 400V ER1J ER1J 600V 420V 600V ER1K ER1K 800V 560V 800V ER1M ER1M 1000V 700V 1000V H Cathode Band J A E D ER1A-D ER1G-K ER1M Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time ER1A-D ER1G-K ER1M Typical Junction Capacitance IF(AV) 1.0A G DIMENSIONS TJ = 75°C IFSM 30A 8.3ms, half sine VF .975V 1.35V 1.60V IFM = 1.0A; TJ = 25°C* IR 5µA 100µA TJ = 25°C TJ = 100°C Trr 50ns 60ns 100ns CJ 45pF B F Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage C DIM A B C D E F G H J INCHES MIN .078 .075 .002 ----.035 .065 .205 .160 .130 MM MIN 1.98 1.90 .05 ----.90 1.65 5.21 4.06 3.30 MAX .116 .089 .008 .02 .055 .091 .224 .180 .155 MAX 2.95 2.25 .20 .51 1.40 2.32 5.69 4.57 3.94 SUGGESTED SOLDER PAD LAYOUT 0.090" 0.085” IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V *Pulse test: Pulse width 200 µsec, Duty cycle 2% www.mccsemi.com 0.070” NOTE MCC ER1A thru ER1M Figure 1 Typical Forward Characteristics 20 Figure 2 Forward Derating Curve 10 2.4 6 2.2 4 2.0 1.8 2 1.6 25°C Amps 1.4 1 1.2 .6 Amps .4 1.0 .8 .6 .2 .4 Single Phase, Half Wave .2 60Hz Resistive or Inductive Load .1 .06 0 .04 0 25 50 75 100 125 150 °C Average Forward Rectified Current - Amperesversus Ambient Temperature - °C .02 .01 .2 .4 .6 .8 1.0 1.2 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 100 60 40 20 pF TJ=25°C 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 Junction Capacitance - pFversus Reverse Voltage - Volts www.mccsemi.com 400 1000 MCC ER1A thru ER1M Figure 4 Peak Forward Surge Current 30 Figure 5 New SMB Assembly 25 20 15 Amps 10 Round Lead Process 5 0 1 2 4 6 8 10 20 40 60 80 100 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50Ω 10Ω trr +0.5A 0 Pulse Generator Note 2 25Vdc 1Ω Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm www.mccsemi.com