New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006S-M3 VS-ETH3006-1-M3 Base cathode 2 • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition 2 • Designed and qualified according to JEDEC-JESD47 DESCRIPTION/APPLICATIONS N/C D2PAK Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. 3 Anode 1 N/C 3 Anode 1 TO-262 The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. TO-263AB (D2PAK), TO-262AA Package IF(AV) 30 A VR 600 V VF at IF 2.65 V trr (typ.) 27 ns TJ max. 175 °C Diode variation Single die The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 95 °C 30 Non-repetitive peak surge current IFSM TC = 25 °C 180 Operating junction and storage temperatures TJ, TStg A - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 2.0 2.65 IF = 30 A, TJ = 150 °C - 1.4 1.8 VR = VR rated - 0.02 30 TJ = 150 °C, VR = VR rated - 50 300 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 20 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Document Number: 93574 Revision: 21-Apr-11 μA For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 26 35 TJ = 25 °C - 26 - TJ = 125 °C UNITS ns - 70 - - 3.5 - - 7.6 - TJ = 25 °C - 50 - TJ = 125 °C - 280 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case RthJC - 0.95 1.4 °C/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = 200 A/μs VR = 200 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight 6 (5) Mounting torque Marking device www.vishay.com 2 Case style D2PAK modified ETH3006S Case style TO-262 ETH3006-1 g For technical questions within your region, please contact one of the following: Document Number: 93574 [email protected], [email protected], [email protected] Revision: 21-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors 1000 1000 175 °C Reverse Current - IR (μA) 100 125 °C 10 100 °C 1 75 °C 0.1 50 °C 0.01 25 °C 0.001 TJ = 175 °C 0.0001 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 10 TJ = 150 °C Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) 100 150 °C TJ = 25 °C 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 100 10 1 3.5 0 100 Forward Voltage Drop - VFM (V) 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 10 D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 Single Pulse (Thermal Resistance) D = 0.01 0.01 1E-051 E-041 E-031 E-021 E-01 1E+00 t1, Rectangular Pulse Duration (s) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics Document Number: 93574 Revision: 21-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® 80 180 RMS Limit 160 Average Power Loss (W) Allowable Case Temperature (°C) 170 150 140 130 120 DC 110 100 90 60 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 40 20 80 0 70 0 5 10 15 20 25 30 35 40 0 45 5 10 15 20 25 30 35 40 Average Forward Current - IF(AV) (A) Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics 45 900 90 800 80 700 IF = 30 A, 125 °C 70 600 IF = 30 A, 125 °C 60 trr (nC) trr (ns) 500 50 40 400 300 IF = 30 A, 25 °C 30 200 IF = 30 A, 25 °C 10 20 typical value typical value 10 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt www.vishay.com 4 0 100 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt For technical questions within your region, please contact one of the following: Document Number: 93574 [email protected], [email protected], [email protected] Revision: 21-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93574 Revision: 21-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® ORDERING INFORMATION TABLE Device code VS- E T H 30 06 S 1 2 3 4 5 6 7 TRL -M3 8 9 1 - Vishay Semiconductors product 2 - 3 - Circuit configuration E = Single diode T = TO-220 4 - H = Hyperfast recovery time 5 - Current code (30 = 30 A) 6 - Voltage code (06 = 600 V) 7 - • S = D2PAK - • -1 = TO-262 - • None = Tube (50 pieces) - • TRL = Tape and reel (left oriented, for D2PAK package) - • TRR = Tape and reel (right oriented, for D2PAK package) - -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free 8 9 ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-ETH3006S-M3 50 1000 Antistatic plastic tube VS-ETH3006-1-M3 50 1000 Antistatic plastic tube VS-ETH3006STRR-M3 800 800 13" diameter reel VS-ETH3006STRL-M3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com 6 TO-263AB (D2PAK) www.vishay.com/doc?95046 TO-262AA www.vishay.com/doc?95419 TO-263AB (D2PAK) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 TO-263AB (D2PAK) www.vishay.com/doc?95032 For technical questions within your region, please contact one of the following: Document Number: 93574 [email protected], [email protected], [email protected] Revision: 21-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 NOTES A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e L 2.54 BSC 4 4 2 0.100 BSC 13.46 14.10 L1 - L2 3.56 0.530 0.555 1.65 - 0.065 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 Document Number: 95419 Revision: 04-Oct-10 4 (4) (5) (6) 3 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1