Advanced Technical Information FBS 10-06SC VRRM = 600 V Silicon Carbide Schottky Rectifier Bridge ID(AV)M = 6.6 A Cjunction = 9 pF in ISOPLUS i4-PACTM 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM 600 V IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz 3 6.6 12 A A A Ptot TC = 25°C 19 W Symbol Conditions VF IF = 4 A; TVJ = 25°C TVJ = 125°C 1.7 1.9 IR VR = VRRM; TVJ = 25°C TVJ = 125°C TVJ = 125°C CJ VR = 400 V; RthJC RthJS (per diode) (per diode) Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 V V 0.2 0.04 mA mA 9 pF 11.5 8 K/W K/W • Silicon Carbide Schottky Diodes - no reverse recovery at turn off - only charge of junction capacity - soft turn off waveform - no forward recovery at turn on - switching behaviour independent of temperature - low leakage current • ISOPLUS i4-PAC(TM) package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - high reliability - industry standard outline Applications • output rectifiers of high end switched mode power supplies • other high frequency rectifiers IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 202 Data according to IEC 60747 and refer to a single diode unless otherwise stated. 1-2 FBS 10-06SC Component Symbol Dimensions in mm (1 mm = 0.0394") Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions Cp coupling capacity between shorted pins and mounting tab in the case dS,dA dS,dA pin - pin pin - backside metal Weight © 2002 IXYS All rights reserved -55...+175 -55...+125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 40 1.7 5.5 pF mm mm 9 g 2-2