FAIRCHILD FDS8958A

FDS8958A
Dual N & P-Channel PowerTrench MOSFET
General Description
Features
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
•
Q1:
•
Q2:
RDS(on) = 0.080Ω @ VGS = -4.5V
•
Fast switching speed
•
High power and handling capability in a widely
used surface mount package
DD1
Q2
4
6
3
Q1
G2
S2 G
Pin 1 SO-8
G1
S1 S
S
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
2
8
1
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
7
S
Absolute Maximum Ratings
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
Q1
Q2
Units
30
30
±20
7
20
±20
-5
-20
V
V
A
2
1.6
1
0.9
-55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
RDS(on) = 0.052Ω @ VGS = -10V
5
SO-8
PD
P-Channel
-5A, -30V
DD2
DD2
Symbol
RDS(on) = 0.028Ω @ VGS = 10V
RDS(on) = 0.040Ω @ VGS = 4.5V
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D1
D
N-Channel
7.0A, 30V
Operating and Storage Junction Temperature Range
W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8958A
FDS8958A
13”
12mm
2500 units
2001 Fairchild Semiconductor International
FDS8958A Rev D(W)
FDS8958A
January 2001
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
IGSSF
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V
∆BVDSS
∆TJ
IDSS
On Characteristics
Q1
Q2
Q1
Q2
Q1
Q2
All
30
-30
V
25
-22
All
mV/°C
µA
1
-1
100
nA
-100
nA
3
-3
V
(Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VGS = 10 V, ID = 7 A
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V, ID = 6 A
VGS = -10 V, ID = -5 A
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V, ID = -4 A
VGS = 10 V, VDS = 5 V
VGS = -10 V, VDS = -5 V
VDS = 5 V, ID = 7 A
VDS = -5 V, ID =-5 A
Q1
Q2
Q1
Q2
Q1
1
-1
Q2
Q1
Q2
Q1
Q2
1.6
-1.7
-4.3
4
21
32
27
28
42
40
41
58
58
52
78
80
20
-20
mV/°C
mΩ
A
19
11
S
789
690
173
306
66
77
pF
Dynamic Characteristics
Q1
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Q2
Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
pF
pF
FDS8958A Rev D(W)
FDS8958A
Electrical Characteristics
Electrical Characteristics
Symbol
Parameter
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ
Max Units
2.2
6.7
7.5
9.7
11.8
19.8
3.7
12.3
16
14
2.5
2.4
2.6
4.8
4.4
13.4
15
19.4
21.3
35.6
7.4
22.2
26
23
(Note 2)
Gate-Drain Charge
Q1
VDD = 10 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
Q2
VDD = -10 V, ID = -1 A,
VGS = -10V, RGEN = 6 Ω
Q1
VDS = 15 V, ID = 7 A, VGS = 10 V
Q2
VDS = -15 V, ID = -5 A,VGS = -10 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A
Voltage
VGS = 0 V, IS = -1.3 A
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
0.74
-0.76
1.3
-1.3
1.2
-1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when
mounted on a
2
0.5 in pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS8958A Rev D(W)
FDS8958A
Typical Characteristics: Q1
2.4
30
VGS = 10V
3.5V
2.0
5.0V
20
VGS = 3.0V
2.2
4.0V
7.0V
1.8
4.5V
3.5V
1.6
3.0V
4.0V
1.4
4.5V
10
1.2
5.0V
6.0V
7.0V
1.0
2.5V
10V
0.8
0
0
1
2
3
4
0
5
6
12
18
24
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.09
1.9
ID = 7A
VGS = 10V
ID = 7A
0.08
1.6
0.07
0.06
1.3
0.05
1.0
o
TA = 125 C
0.04
0.03
0.7
o
TA = 25 C
0.02
0.4
0.01
-50
-25
0
25
50
75
100
125
150
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
VGS = 0V
VDS = 10V
o
25
25 C
o
TA = -55 C
10
o
TA = 125 C
20
1
o
125 C
15
o
25 C
0.1
10
o
-55 C
0.01
5
0.001
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A Rev D(W)
FDS8958A
Typical Characteristics: Q1
10
1200
VDS = 5V
ID =7A
f = 1MHz
VGS = 0 V
10V
8
900
15V
CISS
6
600
4
300
COSS
2
CRSS
0
0
0
4
8
12
16
0.0
5.0
Qg, GATE CHARGE (nC)
10.0
15.0
20.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
RDS(ON) LIMIT
100µs
1ms
10ms
10
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
100ms
30
1s
1
10s
DC
20
VGS = 10V
SINGLE PULSE
0.1
10
o
RθJA = 135 C/W
o
TA = 25 C
0.01
0
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS8958A Rev D(W)
FDS8958A
Typical Characteristics Q2
30
2.5
VGS = -10.0V
25
VGS = -3.5V
-7.0V
-5.0V
2
-6.0V
20
-4.0V
-4.0V
-4.5V
15
1.5
-5.0V
-3.5V
10
-6.0V
-7.0V
-10.0V
1
5
-3.0V
0
0
1
2
3
4
5
0.5
0
6
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
24
30
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
18
-ID, DRAIN CURRENT (A)
0.2
ID = -5A
ID = -5A
VGS = -10V
0.15
1.2
0.1
1.0
o
TA = 125 C
0.05
o
TA = 25 C
0.8
0
0.6
-50
-25
0
25
50
75
100
125
150
2
4
o
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
30
100
VGS = 0V
o
VDS = -10V
TA = -55 C
25
10
o
25 C
20
o
TA = 125 C
1
o
25 C
15
o
125 C
o
0.1
-55 C
10
0.01
5
0
0.001
1.5
2.5
3.5
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
5.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A Rev D(W)
FDS8958A
Typical Characteristics Q2
1000
10
f = 1 MHz
VGS = 0 V
ID = -5.3A
VDS = -5V
-10V
8
800
CISS
-15V
6
600
4
400
2
200
COSS
CRSS
0
0
0
5
10
15
0
5
Qg, GATE CHARGE (nC)
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
50
RDS(ON) LIMIT
µ
1ms 100 s
100ms
1s
1
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
10ms
10
30
10s
20
DC
VGS = -10V
SINGLE PULSE
0.1
10
o
RθJA = 135 C/W
o
TA = 25 C
0.01
0
0.1
1
10
100
0.001
0.01
0.1
-VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
t1, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
o
0.1
RθJA = 135 C/W
0.1
0.05
0.02
0.01
P(pk)
0.01
SINGLE PULSE
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8958A Rev D(W)
SOIC-8 Tape and Reel Data
SOIC(8lds) Packaging
Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Customized
Label
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
Pin 1
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Standard
(no flow code)
TNR
2,500
L86Z
F011
D84Z
Rail/Tube
TNR
TNR
95
4,000
500
13" Dia
-
13" Dia
7" Dia
343x64x343
530x130x83
343x64x343
184x187x47
Max qty per Box
5,000
30,000
8,000
1,000
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
0.1182
SOIC-8 Unit Orientation
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
F63TN Label
LOT: CBVK741B019
QTY: 2500
FSID: FDS9953A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
ESD Label
(F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
©2000 Fairchild Semiconductor International
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B
SOIC-8 Tape and Reel Data, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SOIC(8lds)
(12mm)
6.50
+/-0.10
5.30
+/-0.10
W
12.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
10.25
min
5.50
+/-0.05
P1
P0
8.0
+/-0.1
4.0
+/-0.1
K0
2.1
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.450
+/0.150
9.2
+/-0.3
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOIC(8lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
7" Dia
7.00
177.8
12mm
13" Dia
13.00
330
 1998 Fairchild Semiconductor Corporation
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. B
SOIC-8 Package Dimensions
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
©2000 Fairchild Semiconductor International
September 1998, Rev. A
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GTO™
HiSeC™
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MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G