Doc No. TT4-EA-12624 Revision. 3 Product Standards MOS FET FK3506010L FK3506010L Silicon N-channel MOS FET Unit : mm For switching FK330601 in SMini3 type package 2.0 0.3 0.13 3 Features 1.25 2.1 Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol : CV 2 0.9 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) (0.65)(0.65) 1.3 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25C Parameter Symbol Drain-source voltage Gate-source voltage Drain current Pulse drain current Total power dissipation Channel temperature Operating ambient temperature Storage temperature VDS VGS ID IDp PD Tch Topr Tstg Rating Unit 60 12 100 200 150 150 -40 to +85 -55 to +150 V V mA mA mW C C C Panasonic JEITA Code SMini3-F2-B SC-85 ― Internal Connection (D) 3 1 (G) 2 (S) Pin Name 1. Gate 2. Source 3. Drain Page 1 of 5 Established : 2010-06-07 Revised : 2013-07-08 Doc No. TT4-EA-12624 Revision. 3 Product Standards MOS FET FK3506010L Electrical Characteristics Ta = 25C 3C Parameter Symbol Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance *1 Turn-off time *1 Note) Min VDSS IDSS IGSS VTH Drain-source ON resistance Turn-on time Conditions ID = 1 mA, VGS = 0 VDS = 60 V, VGS = 0 VGS = 10 V, VDS = 0 ID = 1.0 A, VDS = 3.0 V ID = 10 mA, VGS = 2.5 V RDS(on) ID = 10 mA, VGS = 4.0 V |Yfs| ID = 10 mA, VDS = 3.0 V Ciss Coss VDS = 3 V, VGS = 0, f = 1 MHz Crss VDD = 3 V, VGS = 0 to 3 V, ton ID = 10 mA VDD = 3 V, VGS = 3 to 0 V, toff ID = 10 mA Drain-source breakdown voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Typ Max 60 0.9 20 1.2 8 6 60 12 7 3 1.0 10 1.5 15 12 Unit V A A V mS pF pF pF 100 ns 100 ns 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Turn-on and Turn-off test circuit VDD=3V ID=10mA RL=300Ω 90% V GS D 10% 10% Vin VGS=0～3V Vout G V out 50Ω S 90% ton toff Page 2 of 5 Established : 2010-06-07 Revised : 2013-07-08 Doc No. TT4-EA-12624 Revision. 3 Product Standards MOS FET FK3506010L ID - VDS ID - VGS 0.1 0.1 0.08 Drain current ID (A) Drain Current ID (A) 4.0 V 0.08 2.5 V 0.06 0.04 0.02 Ta= 85 ℃ 0.06 25 ℃ 0.04 0.02 VGS = 2.0 V 0 -40 ℃ 0 0 0.5 1 1.5 0 VDS - VGS 1 1.5 2 2.5 3 RDS(on) - ID 100 Drain-source On-state Resistance RDS(on) () 0.3 Drain-source Voltage VDS (V) 0.5 Gate-source voltage VGS (V) Drain-source Voltage VDS (V) 0.2 5 mA ID = 20 mA 0.1 10 mA 0 2 3 4 5 Gate-source voltage VGS (V) 2.5 V 10 VGS = 4.0 V 1 1 10 100 Drain Current ID (mA) Capacitance - VDS Capacitance C (pF) 100 Ciss 10 Coss 1 Crss 0.1 0.1 1 10 100 Drain-source Voltage VDS (V) Page 3 of 5 Established : 2010-06-07 Revised : 2013-07-08 Doc No. TT4-EA-12624 Revision. 3 Product Standards MOS FET FK3506010L Vth - Ta RDS(on) - Ta 12 Drain-source On-resistance RDS(on) (mΩ) Gate-source Threshold Voltage (V) 2.5 2 1.5 1 0.5 0 10 VGS = 2.5 V 8 6 4.0 V 4 2 0 -50 0 50 100 150 -50 0 Temperature (℃) 100 150 PD - Ta 0.2 Total Power Dissipation PD (W) 50 Temperature (℃) 0.15 0.1 0.05 0 0 50 100 150 Temperature Ta (C) Rth - tsw Safe Operating Area 10 Drain Current ID (A) Thermal resistance Rth (C/W) 1000 100 1 IDp = 0.2 A 0.1 1 ms 10 ms 100 ms 0.01 0.001 Operation in this area is limited by RDS(on) 1s Ta = 25 C, Glass epoxy board (25.4 25.4 t0.8mm) coated with copper foil, DC 2 which has more than 300mm . 10 0.1 1 10 Pulse Width tsw (s) 100 1000 0.0001 0.01 0.1 1 10 100 Drain-source Voltage VDS (V) Page 4 of 5 Established : 2010-06-07 Revised : 2013-07-08 Doc No. TT4-EA-12624 Revision. 3 Product Standards MOS FET FK3506010L SMini3-F2-B Unit : mm 2.0±0.2 +0.05 0.13-0.02 +0.05 0.30-0.02 (5°) 2 (0.65) (0.65) 1.3±0.1 0.425±0.050 1 2.1±0.1 1.25±0.10 3 (0.49) 0.9±0.1 0 to 0.1 (0.89) (5°) Land Pattern (Reference) (Unit : mm) 1.9 0.8 0.9 1.3 Page 5 of 5 Established : 2010-06-07 Revised : 2013-07-08 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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