FMMT2907 FMMT2907A SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR SYMBOL FMMT2907 FMMT2907A TYP. TYP. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 26 50 26 50 ns VCE=-30V IC=-150mA, IB1=-15mA (See Turn On Circuit) Turn Off Time toff 70 110 70 110 ns VCE=-6V, IC=-150mA IB1= IB2=-15mA (See Turn Off Circuit) TURN ON TIME TEST CIRCUIT -30V 200Ω -16V 50Ω Pulse width <200ns TURN OFF TIME TEST CIRCUIT 15V 1KΩ 1KΩ 0 -30V 50Ω Pulse width <200ns PAGE NUMBER PARTMARKING DETAIL - FMMT2222 FMMT2222A FMMT2907 FMMT2907A FMMT2907R FMMT2907AR E C B 2BZ 2F 4P 5P SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO FMMT2907 FMMT2907A UNIT -60 -40 V -60 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Scope: Rise Time < 5 ns 1KΩ 0 ISSUE 3 FEBRUARY 1996 ✪ FEATURES * Fast switching COMPLIMENTARY TYPES - FMMT2907 - FMMT2907A -6V 37Ω Scope: Rise Time < 5 ns PARAMETER SYMBOL FMMT2907 MIN. FMMT2907A UNIT CONDITIONS. MAX. MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO -40 -60 V IC=-10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 -60 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-10µA, IC=0 Collector-Emitter Cut-Off Current ICEX -50 -50 nA VCE=-30V, VBE=-0.5V Collector Cut-Off Current ICBO -20 -20 -10 -10 µA nA VCB=-50V, IE=0 VCB=-50V, IE=0, Tamb=150°C Base Cut-Off Current IB -50 -50 nA VCE=-30V, VBE=-0.5V Collector-Emitter Saturation Voltage VCE(sat) -0.4 -1.6 -0.4 -1.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.3 -2.6 -1.3 -2.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Static Forward Current Transfer Ratio hFE Transition Frequency fT 35 50 75 100 30 200 300 75 100 100 100 50 200 IC=-0.1mA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V* IC=-500mA, VCE=-10V* 300 MHz IC=-50mA, VCE=-20V f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER FMMT2907 FMMT2907A SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR SYMBOL FMMT2907 FMMT2907A TYP. TYP. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 26 50 26 50 ns VCE=-30V IC=-150mA, IB1=-15mA (See Turn On Circuit) Turn Off Time toff 70 110 70 110 ns VCE=-6V, IC=-150mA IB1= IB2=-15mA (See Turn Off Circuit) TURN ON TIME TEST CIRCUIT -30V 200Ω -16V 50Ω Pulse width <200ns TURN OFF TIME TEST CIRCUIT 15V 1KΩ 1KΩ 0 -30V 50Ω Pulse width <200ns PAGE NUMBER PARTMARKING DETAIL - FMMT2222 FMMT2222A FMMT2907 FMMT2907A FMMT2907R FMMT2907AR E C B 2BZ 2F 4P 5P SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO FMMT2907 FMMT2907A UNIT -60 -40 V -60 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Scope: Rise Time < 5 ns 1KΩ 0 ISSUE 3 FEBRUARY 1996 ✪ FEATURES * Fast switching COMPLIMENTARY TYPES - FMMT2907 - FMMT2907A -6V 37Ω Scope: Rise Time < 5 ns PARAMETER SYMBOL FMMT2907 MIN. FMMT2907A UNIT CONDITIONS. MAX. MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO -40 -60 V IC=-10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 -60 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-10µA, IC=0 Collector-Emitter Cut-Off Current ICEX -50 -50 nA VCE=-30V, VBE=-0.5V Collector Cut-Off Current ICBO -20 -20 -10 -10 µA nA VCB=-50V, IE=0 VCB=-50V, IE=0, Tamb=150°C Base Cut-Off Current IB -50 -50 nA VCE=-30V, VBE=-0.5V Collector-Emitter Saturation Voltage VCE(sat) -0.4 -1.6 -0.4 -1.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.3 -2.6 -1.3 -2.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Static Forward Current Transfer Ratio hFE Transition Frequency fT 35 50 75 100 30 200 300 75 100 100 100 50 200 IC=-0.1mA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V* IC=-500mA, VCE=-10V* 300 MHz IC=-50mA, VCE=-20V f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER