SOT323 NPN SILICON PLANAR SWITCHING TRANSISTOR ZUMT2222A ISSUE 1 – NOVEMBER 1998 FEATURES * Fast switching PARTMARKING DETAIL – T16 COMPLEMENTARY TYPE – ZUMT2907A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 600 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL V(BR)CBO UNIT CONDITIONS. 75 MIN. MAX. V IC=10µA, IE=0 V(BR)CEO 40 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 10 10 nA µA VCB=60V, IE=0 VCB=60V, IE=0, Tamb=150°C Emitter Cut-Off Current IEBO 10 nA VEB=3V, IC=0 Collector-Emitter Cut-Off Current ICEX 10 nA VCE=60V, VEB(off)=3V Collector-Emitter Saturation Voltage VCE(sat) 0.3 1.0 V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio VBE(sat) 0.6 1.2 2.0 V V hFE 35 50 75 35 100 50 40 IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=0.1mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=10mA, VCE=10V, Tamb=-55°C IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device ZUMT2222A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Transition Frequency Output Capacitance Input Capacitance Delay Time Rise Time SYMBOL fT Storage Time Fall Time MIN. 300 MAX. UNIT MHz Cobo Cibo td tr 8 25 10 25 pF pF ns ns ts tf 225 60 ns ns CONDITIONS. IC=20mA, VCE=20V f=100MHz VCB=10V, IE=0, f=140KHz VEB=0.5V, IC=0 f=140KHz VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) VCC=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit) DELAY AND RISE – TEST CIRCUIT +30V Generator rise time <2ns Pulse width (t1)<200ns Duty cycle = 2% 200Ω 619Ω 9.9V Scope: Rin > 100 kΩ Cin < 12 pF Rise Time < 5 ns 0 0.5V STORAGE TIME AND FALL TIME – TEST CIRCUIT +30V =100µs <5ns 200Ω +16.2 V 0 1KΩ Scope: Rin > 100 kΩ Cin < 12 pF Rise Time < 5 ns 1N916 -13.8 V -3V =500µs Duty cycle = 2%