FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features Description ■ AC input response (FOD814 only) The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. ■ Applicable to Pb-free IR reflow soldering ■ Compact 4-pin package ■ Current transfer ratio in selected groups: FOD814: 20–300% FOD814A: 50–150% FOD817: 50–600% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% ■ C-UL, UL and VDE approved ■ High input-output isolation voltage of 5000Vrms ■ Minimum BVCEO of 70V guaranteed ■ Higher operating temperatures (versus H11AXXX counterparts) Applications FOD814 Series ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface FOD817 Series ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs Functional Block Diagram ANODE, CATHODE 1 4 COLLECTOR CATHODE, ANODE 2 3 EMITTER FOD814 ANODE 1 4 COLLECTOR CATHODE 2 3 EMITTER 4 FOD817 1 ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 www.fairchildsemi.com FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers December 2011 Value Symbol Parameter FOD814 Units FOD817 TOTAL DEVICE TSTG Storage Temperature TOPR Operating Temperature TSOL Lead Solder Temperature -55 to +150 -55 to +105 °C -55 to +110 °C 260 for 10 sec °C 125 Max. °C TJ Junction Temperature θJC Junction-to-Case Thermal Resistance 210 °C/W Total Power Dissipation 200 mW PTOT EMITTER IF Continuous Forward Current VR Reverse Voltage ±50 50 mA PD Power Dissipation Derate above 100°C 70 1.7 VCEO Collector-Emitter Voltage 70 V VECO Emitter-Collector Voltage 6 V IC Continuous Collector Current 50 mA PC Collector Power Dissipation Derate above 90°C 150 2.9 mW mW/°C 6 mW mW/°C DETECTOR ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 www.fairchildsemi.com 2 FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Individual Component Characteristics Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit V EMITTER VF Forward Voltage IR Reverse Leakage Current Ct Terminal Capacitance FOD814 IF = ±20mA 1.2 1.4 FOD817 IF = 20mA 1.2 1.4 FOD817 VR = 4.0V 10 µA pF FOD814 V = 0, f = 1kHz 50 250 FOD817 V = 0, f = 1kHz 30 250 Collector Dark Current FOD814 VCE = 20V, IF = 0 FOD817 VCE = 20V, IF = 0 Collector-Emitter Breakdown Voltage FOD814 IC = 0.1mA, IF = 0 70 FOD817 IC = 0.1mA, IF = 0 70 Emitter-Collector Breakdown Voltage FOD814 IE = 10µA, IF = 0 6 FOD817 IE = 10µA, IF = 0 6 DETECTOR ICEO BVCEO BVECO 100 nA 100 V V DC Transfer Characteristics Symbol CTR DC Characteristic Current Transfer Ratio Device Test Conditions Min. FOD814 5V(1) Max. Unit 20 300 % 50 150 50 600 FOD817A 80 160 FOD817B 130 260 FOD817C 200 400 FOD817D 300 600 IF = ±1mA, VCE = FOD814A FOD817 VCE (sat) Collector-Emitter Saturation Voltage IF = 5mA, VCE = 5V(1) Typ.* FOD814 IF = ±20mA, IC = 1mA 0.1 0.2 FOD817 IF = 20mA, IC = 1mA 0.1 0.2 V AC Transfer Characteristics Symbol AC Characteristic Device Test Conditions fC Cut-Off Frequency FOD814 VCE = 5V, IC = 2mA, RL = 100Ω, -3dB tr Response Time (Rise) FOD814, FOD817 VCE = 2 V, IC = 2mA, RL = 100Ω(2) tf Response Time (Fall) FOD814, FOD817 Min. 15 Typ.* Max. Unit 80 kHz 4 18 µs 3 18 µs *Typical values at TA = 25°C ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 www.fairchildsemi.com 3 FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers Electrical Characteristics (TA = 25°C Unless otherwise specified.) Isolation Characteristics Symbol Characteristic Device Test Conditions VISO Input-Output Isolation Voltage(3) FOD814, f = 60Hz, t = 1 min, FOD817 II-O ≤ 2µA RISO Isolation Resistance FOD814, VI-O = 500VDC FOD817 CISO Isolation Capacitance FOD814, VI-O = 0, f = 1 MHz FOD817 Min. Typ.* Max. 5000 5x1010 Units Vac(rms) 1x1011 0.6 Ω 1.0 pf *Typical values at TA = 25°C Notes: 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to page 7. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 www.fairchildsemi.com 4 FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers Electrical Characteristics (TA = 25°C Unless otherwise specified.) (Continued) COLLECTOR POWER DISSIPATION PC (mW) 200 150 100 50 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 6 Fig. 3 Collector-Emitter Saturation Voltage vs. Forward Current Ic = 0.5mA 1mA 3mA 5mA 5 4 2 1 0 2.5 5.0 7.5 10.0 12.5 FORWARD CURRENT IF (mA) CURRENT TRANSFER RATIO CTR ( %) FORWARD CURRENT IF (mA) 75oC o 50 C 25oC 0oC o -30 C o -55 C 1.5 0 20 40 60 80 100 120 o TA = 105 C 75oC o 50 C 10 25oC 0oC o -30 C 1 o -55 C 140 1.0 1.5 2.0 120 VCE = 5V Ta= 25°C 100 FOD817 80 60 40 FOD814 20 0 0. 1 0.2 2.0 FORWARD VOLTAGE VF (V) ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 0 -55 -40 -20 Fig. 6 Current Transfer Ratio vs. Forward Current TA = 110 C 1.0 50 FORWARD VOLTAGE VF (V) o 0.1 0.5 100 0.1 0.5 15.0 Fig. 5 Forward Current vs. Forward Voltage (FOD817) 100 1 150 Ta = 25°C 3 10 200 Fig. 4 Forward Current vs. Forward Voltage (FOD814) 100 7mA 0 Fig. 2 Collector Power Dissipation vs. Ambient Temperature (FOD817) AMBIENT TEMPERATURE TA (°C) FORWARD CURRENT IF (mA) COLLECTOR POWER DISSIPATION PC (mW) Fig. 1 Collector Power Dissipation vs. Ambient Temperature (FOD814) 0.5 1 2 5 10 20 50 100 FORWARD CURRENT IF (mA) www.fairchildsemi.com 5 FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers Typical Electrical/Optical Characteristics (TA = 25°C Unless otherwise specified.) Fig. 8 Collector Current vs. Collector-Emitter Voltage (FOD817) Fig. 7 Collector Current vs. Collector-Emitter Voltage (FOD814) 30 50 I F = 30mA 40 20 m A 30 Pc (M AX.) 10mA 20 I IF = 30mA COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Ta= 25°C 5mA 10 Pc(MAX.) 20 15 10mA 10 5m A 5 1m A 0 0 0 0 10 20 30 40 50 60 70 80 90 100 COLLECTOR-EMITTER VOLTAGE VCE (V) Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature Fig. 10 Collector-Emitter Saturation Voltage vs. Ambient Temperature COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FOD814 IF = 1 mA VCE = 5V 140 120 100 80 FOD817 IF = 5mA VCE = 5V 60 40 20 0 -60 -40 -20 0 0.12 I = 20mA F 0.10 0.08 0.06 0.04 0.02 Fig. 11 LED Power Dissipation vs. Ambient Temperature (FOD814) Fig. 12 LED Power Dissipation vs. Ambient Temperature (FOD817) LED POWER DISSIPATION PLED (mW) 100 80 60 40 20 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 IC = 1mA 0.00 -60 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) LED POWER DISSIPATION PLED (mW) 10 20 30 40 50 60 70 80 90 COLLECTOR-EMITTER VOLTAGE VCE (V) 160 RELATIVE CURRENT TRANSFER RATIO (%) Ta = 25°C 20mA 25 100 80 60 40 20 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) www.fairchildsemi.com 6 FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers Typical Electrical/Optical Characteristics (Continued) (TA = 25°C Unless otherwise specified.) Fig. 13 Response Time vs. Load Resistance RESPONSE TIME (µs) 50 20 VCE = 2V Ic= 2mA Ta = 25°C Fig. 14 Frequency Response tr VOLTAGE GAIN AV (dB) 100 tf 10 5 td 2 ts 1 0.5 VCE = 2V Ic = 2mA Ta = 25°C 0 RL=10k 1k 100 -10 0.2 -20 0.2 0.1 COLLECTOR DARK CURRENT ICEO (nA) 0.1 0.2 0.5 1 2 5 LOAD RESISTANCE RL (kΩ) 10 0.5 15 2 10 100 FREQUENCY f (kHz) 1000 Fig. 15 Collector Dark Current vs. Ambient Temperature 10000 VCE = 20V 1000 100 10 1 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) Test Circuit for Frequency Response Test Circuit for Response Time Vcc Input RD Input Vcc Output RL Output RD 10% RL Output 90% td ts tr ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 tf www.fairchildsemi.com 7 FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers Typical Electrical/Optical Characteristics (Continued) (TA = 25°C Unless otherwise specified.) Through Hole Surface Mount 0.276 (7.00) 0.236 (6.00) 0.200 (5.10) 0.161 (4.10) 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.130 (3.30) 0.091 (2.30) 0.200 (5.10) 0.161 (4.10) SEATING PLANE SEATING PLANE 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.051 (1.30) 0.043 (1.10) 0.020 (0.51) TYP 0.276 (7.00) 0.236 (6.00) 0.010 (0.26) 0.049 (1.25) 0.030 (0.76) 0.024 (0.60) 0.004 (0.10) 0.412 (10.46) 0.388 (9.86) 0.010 (0.26) 0.150 (3.80) 0.110 (2.80) 0.110 (2.79) 0.090 (2.29) 0.393 (9.98) 0.300 (7.62) Lead Coplanarity 0.004 (0.10) MAX 0.024 (0.60) 0.016 (0.40) 0.110 (2.79) 0.090 (2.29) Surface Mount (Footprint Dimensions) 0.4" Lead Spacing 1.5 SEATING PLANE 1.3 0.200 (5.10) 0.161 (4.10) 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00) 9 0.291 (7.40) 0.252 (6.40) 0.130 (3.30) 0.091 (2.30) 0.110 (2.80) 0.011 (1.80) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.010 (0.26) 2.54 0.110 (2.79) 0.090 (2.29) 0.42 (10.66) 0.38 (9.66) Note: All dimensions are in inches (millimeters) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 www.fairchildsemi.com 8 FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers Package Dimensions Option Part Number Example Description S FOD814S Surface Mount Lead Bend SD FOD814SD Surface Mount; Tape and reel 300 FOD814300 VDE Approved 300W FOD814300W VDE Approved, 0.4" Lead Spacing 3S FOD8143S VDE Approved, Surface Mount 3SD FOD8143SD VDE Approved, Surface Mount, Tape & Reel Marking Information 4 5 V X ZZ Y 3 814 6 2 1 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code Y = Manufactured in Thailand YA = Manufactured in China ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 www.fairchildsemi.com 9 FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers Ordering Information P2 Ø1.55±0.05 P0 1.75±0.1 F W B0 A0 P1 0.3±0.05 K0 Note: All dimensions are in millimeters. Symbol Description Dimensions in mm (inches) W Tape wide 16 ± 0.3 (.63) P0 Pitch of sprocket holes F P2 Distance of compartment 7.5 ± 0.1 (.295) 2 ± 0.1 (.079) P1 Distance of compartment to compartment 12 ± 0.1 (.472) A0 Compartment 4 ± 0.1 (.15) 10.45 ± 0.1 (.411) B0 5.30 ± 0.1 (.209) K0 4.25 ± 0.1 (.167) ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 www.fairchildsemi.com 10 FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers Carrier Tape Specifications Temperature (°C) Tp Tsmax Ramp-down Tsmin 25°C Soldering zon ts (Preheat) Time (sec) Profile Feature Pb-Sn solder assembly Lead Free assembly Preheat condition (Tsmin-Tsmax / ts) 100°C ~ 150°C 60 ~ 120 sec 150°C ~ 200°C 60 ~120 sec Melt soldering zone 183°C 60 ~ 120 sec 217°C 30 ~ 90 sec Peak temperature (Tp) 240 +0/-5°C 260 +0/-5°C Ramp-down rate 6°C/sec max. 6°C/sec max. Recommended Wave Soldering condition Profile Feature For all solder assembly Peak temperature (Tp) ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 Max 260°C for 10 sec www.fairchildsemi.com 11 FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers Lead Free Recommended IR Reflow Condition FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 www.fairchildsemi.com 12