FODM121 Series, FODM124, FODM2701, FODM2705 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Features Applications ■ More than 5mm creepage/clearance ■ Digital logic inputs ■ Compact 4-pin surface mount package ■ Microprocessor inputs ■ Power supply monitor (2.4mm maximum standoff height) ■ Current Transfer Ratio in selected groups DC Input: FODM121: 50–600% FODM121A: 100–300% FODM121B: 50–150% FODM121C: 100–200% ■ Twisted pair line receiver FODM2701: 50–300% FODM124: 100% MIN AC Input: FODM2705: 50–300% ■ Available in tape and reel quantities of 2500 ■ Applicable to Infrared Ray reflow (260°C max, 10 sec.) ■ Telephone line receiver Description The FODM124, FODM121 series, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. ■ C-UL, UL and VDE* certifications *option ‘V’ required Package Dimensions 4.40±0.20 ANODE 1 CATHODE 2 2.54 3.85±0.20 2.00±0.20 5.30±0.30 ANODE 1 CATHODE 2 0.40±0.10 Note: All dimensions are in millimeters. ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4 3 EMITTER Equivalent Circuit FODM121, FODM124, FODM2701 0.20±0.05 0.10±0.10 4 COLLECTOR 4 COLLECTOR 3 EMITTER 7.00 +0.2 –0.7 Equivalent Circuit FODM2705 www.fairchildsemi.com FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers February 2012 Symbol Parameter Value Units TOTAL PACKAGE TSTG Storage Temperature -40 to +125 °C TOPR Operating Temperature -40 to +110 °C EMITTER IF (avg) Continuous Forward Current 50 mA IF (pk) Peak Forward Current (1µs pulse, 300 pps.) 1 A VR Reverse Input Voltage 6 V PD Power Dissipation 70 mW 0.65 mW/°C Continuous Collector Current 80 mA Power Dissipation 150 mW 2.0 mW/°C FODM2701, FODM2705 40 V FODM121 Series, FODM124 80 Derate linearly (above 25°C) DETECTOR PD Derate linearly (above 25°C) VCEO VECO Collector-Emitter Voltage Emitter-Collector Voltage 7 V Electrical Characteristics (TA = 25°C) Individual Component Characteristics Symbol Parameter Test Conditions Device Min. IF = 10mA FODM121 Series, FODM124 1.0 IF = 5mA FODM2701 IF = ±5mA FODM2705 VR = 5V FODM2701 Typ.* Max. Unit 1.3 V EMITTER VF IR Forward Voltage Reverse Current 1.4 5 µA FODM121 Series FODM124 DETECTOR BVCEO BVECO Breakdown Voltage Collector to Emitter IC = 1mA, IF = 0 FODM121 Series, FODM124 80 FODM2701, FODM2705 40 7 Emitter to Collector IE = 100µA, IF = 0 All ICEO Collector Dark Current VCE = 40V, IF = 0 All CCE Capacitance VCE = 0V, f = 1MHz All ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4 V V 100 10 nA pF www.fairchildsemi.com 2 FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Transfer Characteristics Symbol CTR Characteristic DC Current Transfer Ratio Test Conditions Device Min. IF = ±5mA, VCE = 5V FODM2705 IF = 5mA, VCE = 5V IF = 5mA, VCE = 5V IF = 1mA, VCE = 0.5V Max. Unit 50 300 % FODM2701 50 300 FODM121 50 600 FODM121A 100 300 FODM121B 50 150 FODM121C 100 200 FODM124 100 1200 IF = 0.5mA, VCE = 1.5V CTR Symmetry VCE (SAT) Saturation Voltage Typ.* 50 IF = ±5mA, VCE = 5V FODM2705 0.3 3.0 IF = ±10mA, IC = 2mA FODM2705 0.3 IF = 10mA, IC = 2mA FODM2701 0.3 IF = 8mA, IC = 2.4mA FODM121 Series 0.4 IF = 1mA, IC = 0.5mA FODM124 0.4 V tr Rise Time (Non-Saturated) IC = 2mA, VCE = 5V, RL = 100Ω All 3 µs tf Fall Time (Non-Saturated) All 3 µs IC = 2mA, VCE = 5V, RL = 100Ω Isolation Characteristics Characteristic Steady State Isolation Voltage(1) Test Conditions Symbol Device Min. 1 Minute VISO All 3750 Typ.* Max. Unit VRMS *All typicals at TA = 25°C Note: 1. Steady state isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 3 and 4 are common. ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4 www.fairchildsemi.com 3 FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Electrical Characteristics (Continued) (TA = 25°C) Fig. 2 Collector-Emitter Saturation Voltage vs. Ambient Temperature (FODM121/2701/2705) Fig. 1 Forward Current vs. Forward Voltage 100 VCE(sat) - Collector-Emitter Saturation Voltage(V) 0.35 IF - Forward Current (mA) TA = 110oC 70oC o o 25 C 0C -40oC 10 0.30 0.25 0.15 0.8 1.0 1.2 1.4 1.6 IF = 10mA IC = 2mA 0.10 0.05 0.00 -40 1 0.6 IF = 8mA IC = 2.4mA 0.20 1.8 -20 0 20 40 60 80 100 120 VF - Forward Voltage (V) TA - Ambient Temperature (°C) Fig. 3 Current Transfer Ratio vs. Forward Current (FODM121/2701/2705) Fig. 4 Collector Current vs. Forward Current (FODM121/2701/2705) 100 TA = 25 oC o VCE = 10V IC - Collector Current (mA) CTR – Current Transfer Ratio (%) TA = 25 C VCE = 10V VCE = 5V 100 VCE = 5V 10 1 0.1 10 0.1 1 10 0.1 100 1 10 100 IF - Forward Current (mA) IF - Forward Current (mA) Fig. 6 Collector Current vs. Collector-Emitter Voltage (FODM121/2701/2705) Fig. 5 Collector Current vs. Ambient Temperature (FODM121/2701/2705) 100 o TA = 25 C 40 IF = 50mA 10 IC - Collector Current (mA) IC - Collector Current (mA) IF = 25mA IF = 10mA IF = 5mA IF = 1mA 1 IF = 0.5mA 0.1 IF = 40mA IF = 30mA 30 IF = 20mA 20 IF = 10mA 10 IF = 5mA VCE = 5V 0.01 -40 IF = 1mA 0 -20 0 20 40 60 80 100 0 120 ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4 2 4 6 8 10 VCE - Collector-Emitter Voltage (V) TA - Ambient Temperature (°C) www.fairchildsemi.com 4 FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Typical Performance Curves Fig. 8 Normalized Current Transfer Ratio vs. Ambient Temperature (FODM121/2701/2705) 160 CTR – Normalized Current Transfer Ratio (%) ICEO - Collector Dark Current (nA) 10000 VCE = 40V 1000 100 10 1 0.1 -40 140 100 80 60 40 20 -20 0 20 40 60 80 100 120 -40 -20 VCE(sat) - Collector-Emitter Saturation Voltage(V) IF = 5mA IF = 16mA o TA = 25 C Switching Time (µs) tOFF 100 tS 10 tON 10 40 60 80 100 120 0.35 IF = 1mA IC = 0.5mA 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -40 1 1 20 Fig. 10 Collector-Emitter Saturation Voltage vs. Ambient Temperature (FODM124) 1000 VCC = 5V 0 TA - Ambient Temperature (°C) Fig. 9 Switching Time vs. Load Resistance (FODM121/2701/2705) 100 -20 0 20 40 60 80 100 120 TA - Ambient Temperature (°C) RL - Load Resistance (kΩ) Fig. 11 Current Transfer Ratio vs. Forward Current (FODM124) Fig 12. Collector Current vs. Forward Current (FODM124) TA = 25°C VCE = 0.5V TA = 25°C VCE = 0.5V 10 IC - Collector Current (mA) CTR – Current Transfer Ratio (%) Normalized to TA = 25 C 120 TA - Ambient Temperature (°C) 100 1 10 IF - Forward Current (mA) ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4 1 0.1 0.01 0.1 10 0.1 o IF = 5mA VCE = 5V 1 10 IF - Forward Current (mA) www.fairchildsemi.com 5 FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Fig 7. Collector Dark Current vs. Ambient Temperature (FODM121/2701/2705) 10 o TA = 25 C IF = 10mA 8 IF = 10mA IF = 5mA IC - Collector Current (mA) IC - Collector Current (mA) VCE = 0.5V 10 IF = 2mA IF = 1mA 1 IF = 0.5mA 6 IF = 5mA 4 IF = 2mA 2 IF = 1mA IF = 0.5mA 0.1 -40 0 -20 0 20 40 60 80 100 0.0 120 0.2 0.4 0.6 0.8 1.0 VCE - Collector-Emitter Voltage (V) TA - Ambient Temperature (°C) Fig. 16 Normalized Current Transfer Ratio vs. Ambient Temperature (FODM124) Fig. 15 Collector Dark Current vs. Ambient Temperature (FODM124) ICEO - Collector Dark Current (nA) 10000 CTR – Normalized Current Transfer Ratio (%) 160 VCE = 40V 1000 100 10 1 0.1 -40 140 IF = 1mA, VCE = 0.5V Normalized to TA = 25°C 120 100 80 60 40 20 -20 0 20 40 60 80 100 -40 120 -20 0 20 40 60 80 100 120 TA - Ambient Temperature (°C) TA - Ambient Temperature (°C) Fig. 17 Switching Time vs. Load Resistance (FODM124) VCC = 5V IF = 1mA TA = 25°C Switching Time (µs) 1000 tOFF 100 tS 10 tON 1 1 10 100 RL - Load Resistance (kΩ) ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4 www.fairchildsemi.com 6 FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Fig. 14 Collector Current vs. Collector-Emitter Voltage (FODM124) Fig 13. Collector Current vs. Ambient Temperature (FODM124) FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Ordering Information Option Description V VDE Approved R2 Tape and Reel (2500 units) R2V Tape and Reel (2500 units) and VDE Approved Marking Information 1 121 2 V X YY R 6 3 4 5 Definitions ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code www.fairchildsemi.com 7 K0 P2 P0 t D0 E A0 W1 W B0 d F D1 P 2.54 Pitch Description Symbol Dimensions Tape Width W 12.00±0.4 Tape Thickness t 0.35±0.02 Sprocket Hole Pitch P0 4.00±0.20 Sprocket Hole Dia. D0 1.55±0.20 Sprocket Hole Location E 1.75±0.20 Pocket Location F 5.50±0.20 P2 2.00±0.20 Pocket Pitch P 8.00±0.20 Pocket Dimension A0 4.75±0.20 B0 7.30±0.20 K0 2.30±0.20 Pocket Hole Dia. D1 1.55±0.20 Cover Tape Width W1 9.20 Cover Tape Thickness d Max. Component Rotation or Tilt 20° max Devices Per Reel 2500 Reel Diameter ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4 0.065±0.02 330 mm (13") www.fairchildsemi.com 8 FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Carrier Tape Specifications FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Footprint Drawing for PCB Layout 0.80 1.00 6.50 2.54 Note: All dimensions are in mm. ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4 www.fairchildsemi.com 9 FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4 8 minutes max. www.fairchildsemi.com 10 FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers 11 www.fairchildsemi.com ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.4