FPD1500SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES (1850MHZ): • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant 9 GENERAL DESCRIPTION: The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 1500 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels. TYPICAL APPLICATIONS: • • • Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems. ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power at 1dB Gain Compression P1dB VDS = 5 V; IDS = 50% IDSS 26.0 27.5 dBm Small-Signal Gain SSG VDS = 5 V; IDS = 50% IDSS 15.5 17 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; 50 % POUT = P1dB Noise Figure NF VDS = 5 V; IDS = 50% IDSS 1.0 1.2 dB VDS = 5 V; IDS = 25% IDSS Output Third-Order Intercept Point IP3 (from 15 to 5 dB below P1dB) VDS = 5V; IDS = 50% IDSS Matched for optimal power 38 Matched for best IP3 40 dBm 42 Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 375 465 550 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 750 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 400 mS Gate-Source Leakage Current IGSO VGS = -5 V 1 15 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 1.5 mA 0.7 1.0 1.3 V Gate-Source Breakdown Voltage |VBDGS| IGS = 1.5 mA 12 16 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 1.5 mA 12 16 V Thermal Resistance RθJC 60 °C/W Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted) 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500SOT89 Datasheet v3.0 1 ABSOLUTE MAXIMUM RATING : PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM Drain-Source Voltage VDS -3V < VGS < +0V 8V Gate-Source Voltage VGS 0V < VDS < +8V -3V Drain-Source Current IDS For VDS < 2V IDSS Gate Current IG Forward or reverse current 15mA PIN Under any acceptable bias state 350mW Channel Operating Temperature TCH Under any acceptable bias state 175°C Storage Temperature TSTG Non-Operating Storage -55°C to 150°C Total Power Dissipation PTOT See De-Rating Note below 2.3W Comp. Under any bias conditions 5dB RF Input Power 2 Gain Compression Simultaneous Combination of Limits 3 2 or more Max. Limits Notes: 1 TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 2.3 - (0.016W/°C) x TPACK where TPACK= source tab lead temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 65°C carrier temperature: PTOT = 2.3W – (0.016 x (65 – 22)) = 1.61W BIASING GUIDELINES: • • • Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. A class A/B Bias of 25-33% of IDSS to achieve better OIP3, and Noise Figure performance is suggested. 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500SOT89 Datasheet v3.0 FREQUENCY RESPONSE: Biased @ 5V, 200mA Biased @ 5V 50%IDSS 35 1.4 MSG 1.2 S21 Noise FIgure (dB) 15 10 1 0.8 0.6 0.4 N.F. (dB) 0.2 5 5.7 5.3 4.9 4.5 4.1 3.7 8 3.3 7.5 2.9 6.5 2.5 3.5 4.5 5.5 Frequency (GHz) 2.1 2.5 1.7 1.5 0.5 0.5 1.3 0 0 0.9 MSG 20 Mag S21 25 & 30 Frequency (GHz) Note: Device tuned for minimum noise figure TEMPERATURE RESPONSE: Biased @ 5V, 33%IDSS Data taken on Eval board @ 1.85GHz Temperature (C) Temperature (C) Note: Evaluation board tuned for maximum power 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com 90 80 70 60 (dB) 50 90 80 70 60 50 40 30 20 10 0 -10 -20 12.0 N.F. 40 13.0 30 SSG (dB) P1dB (dBm) 20 14.0 10 15.0 0 16.0 .70 .60 .50 .40 .30 .20 .10 .00 -10 SSG (dB) 17.0 -20 30.0 29.0 28.0 27.0 26.0 25.0 24.0 23.0 22.0 21.0 20.0 P1dB (dBm) 18.0 Noise Figure (dB) Biased @ 5V, 50% IDSS Data taken on Eval Board at 1.85GHz FPD1500SOT89 Datasheet v3.0 TYPICAL TUNED RF PERFORMANCE: Drain Efficiency and PAE Power Transfer Characteristic 3.50 29.00 70.00% Pout Comp Point 70.00% 3.00 27.00 60.00% 60.00% 2.50 PAE Eff. 1.00 19.00 17.00 .50 15.00 .00 13.00 -2.00 0.00 2.00 4.00 6.00 8.00 10.00 12.00 50.00% 50.00% 40.00% 40.00% 30.00% 30.00% 20.00% 20.00% 10.00% 10.00% .00% -2.00 -.50 16.00 14.00 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 Drain Efficiency (%) 1.50 21.00 PAE (%) 2.00 23.00 Gain Compression (dB) Output Power (dBm) 25.00 .00% 16.00 Input Power (dBm) Input Power (dBm) NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS = 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for maximum output power at 1dB gain compression. Typical Intermodulation Performance VDS = 5V IDS = 50% IDSS at f = 1.85GHz -10.00 25.00 -15.00 Output Power (dBm) -25.00 -30.00 21.00 -35.00 19.00 -40.00 3rd Oder IM Poroducts (dBc) -20.00 23.00 -45.00 17.00 -50.00 15.00 -55.00 -1.00 1.00 3.00 5.00 7.00 9.00 11.00 Input Power (dBm) Pout Im3, dBc Note: pHEMT devices have enhanced intermodulation performance. This yields OIP3 values of about P1dB + 14dBm. This IMD enhancement is affected by the quiescent bias and the matching applied to the device. TYPICAL I-V CHARACTERISTICS DC IV Curves FPD1500SOT89 0.60 Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilized circuits. Drain-Source Current (A) 0.50 0.40 VG=-1.5V VG-1.25V VG=-1.00V VG=-0.75V VG=-0.5V VG=-0.25V VG=0V 0.30 0.20 0.10 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Drain-Source Voltage (V) 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500SOT89 Datasheet v3.0 TYPICAL OUTPUT PLANE POWER CONTOURS (VDS = 5v, IDS = 50%IDSS) : Swp Max 159 1. 0 0. 8 0. 6 2. 0 Swp Max 123 1. 0 0. 8 0. 6 2. 0 0.4 0.4 3.0 3.0 22dBm 4.0 5.0 0.2 0.2 23dBm 24dBm 0 25dBm 10.0 0. 2 0. 26dBm 4 0. 6 0. 1. 0 8 2. 0 10 .0 3. 4. 5. 0 0 0 0. 2 0 4.0 5.0 23dBm 24dBm 25dBm 26dBm 0. 27dBm 4 0. 6 10.0 2. 0 0. 1. 0 8 10 .0 3. 4. 5. 0 0 0 28dBm 27dBm -10.0 -10.0 28dBm -0.2 -0.2 -5.0 -4.0 -5.0 -4.0 -3.0 -0.4 -0.4 0. 6 22dBm 2. 0 0. 8 1. 0 0. 6 Swp Min 1 -3.0 2. 0 0. 8 1. 0 Swp Min 1 900 MHz Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) Γs: 0.67 ∠ 103.6º 0.30 + j0.74 (normalized) 15 + j37.0 Ω Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown. 1850 MHz Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) Γs: 0.74 ∠ 168.2º 0.15 + j0.1 (normalized) 7.5 + j5.0 Ω Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown. TYPICAL SCATTERING PARAMETERS (50Ω SYSTEM): FPD1500SOT89 5V / 50%IDSS 1.0 0.8 6 GHz 5 GHz 0.4 0 3. 0. 4 3.5 GHz 3.0 0 4. 5 .0 0.2 2.5 GHz 5 GHz 4 GHz 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 6 GHz 4.0 7 GHz 5.0 3 GHz 10.0 0.2 0 2. 0 7 GHz 4 GHz 3 GHz 2 GHz Swp Max 8GHz 1. 0 0. 8 0. 6 2. 0 6 0. FPD1500SOT89 5V / 50%IDSS Swp Max 8GHz 0. 2 0 10.0 0. 0. 24 GHz 6 0. 8 1. 0 2. 0 10 .0 3. 4. 5. 0 0 0 1 GHz -10.0 -10.0 1.5 2GHz -0.2 -5.0 - 5. -0. -4.0 0 -4 .0 -3 .0 .4 -0 -1.0 -0.8 -0 .6 S11 -3.0 -0.4 .0 -2 1 GHz S22 Swp Min 0.5GHz 0. 6 0. 8 2. 0 1. 0 Swp Min 0.5GHz 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500SOT89 Datasheet v3.0 STATISTICAL SAMPLE OF RF PERFORMANCE: Noise Figure Small Signal Gain 5000 4000 Count Count 6000 14000 12000 10000 8000 6000 4000 2000 0 3000 2000 1000 13 14 15 16 17 0 18 0.6 Gain (dB) 0.8 0.9 1 1.1 1.2 1.3 NF (dB) rd Output Power at 1dB Gain Compression Output 3 -Order Intercept Point 14000 6000 12000 5000 10000 4000 Count Count 0.7 8000 6000 3000 2000 4000 1000 2000 0 0 23 24 25 26 27 30 28 32 34 36 38 40 42 44 IP3 (dBm) P1dB (dBm) Note: The devices were tested by a high-speed automatic test system, in a matched circuit based on 2GHz Evaluation Board. This circuit is a dual-bias single-pole lowpass topology, and the devices were biased at VDS = 4.5V, IDS = 120mA, Test Frequency = 2.0GHz. The performance data is summarized below: Parameter Median Standard Deviation Test Limit CPK Small-Signal Gain 15.5 0.20 14.5 1.7 Noise Figure 0.91 0.03 1.20 3.2 Output Power (P1dB) rd 3 -Order Intercept 25.2 0.25 24.5 0.93 38.7 1.1 36.5 0.67 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500SOT89 Datasheet v3.0 REFERENCE DESIGN 0.9GHZ FREQUENCY GHZ 0.9 Gain P1dB OIP31 N.F. S11 S22 Vd Vg Id dB dBm dBm dB dB dB V V mA 20 27 39 0.7 -5 -15 5 -0.4 to -0.6 200 1. Measured at 15dBm per tone Board Layout Vg Vd 33pF 0.01uF 20O Lg 33pF 33pF L1 Q1 0.01uF + 1.0uF + Ld C1 33pF 0.63" L2 1.45" Component Values Component Value Description Lg 47nH LL1608 Toko chip inductor Ld 47nH LL1608 Toko chip inductor L1 12nH LL1005 Toko chip inductor L2 4.7nH LL1005 Toko chip inductor Schematic -Vg Vd 0.01uF 1.0uF 33pF 0.01uF 33pF 20 Ohm 33pF C1 5.6pF ATC 600S chip capacitor Eval board material - 31mil thick FR4 with 1/2 Ounce Cu on both sides 47 nH L1 RF IN 47 nH 33pF C1 RF OUT L2 D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from Vishay is used on the gate D.C. bias line for stability. 7 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500SOT89 Datasheet v3.0 REFERENCE DESIGN 1.85GHZ FREQUENCY GHZ 1.85 Gain P1dB OIP31 N.F. S11 S22 Vd Vg Id dB dBm dBm dB dB dB V V mA 16 27 41 0.9 -9 -14 5 -0.4 to -0.6 200 1. Measured 15dBm per tone Board Layout Vg Vd 33pF 0.01uF 20O Lg 33pF 0.01uF 33pF Ld Q1 L1 + 1.0uF + C1 33pF 0.63" L2 1.45" Component Values Component Value Description Lg Ld L1 L2 C1 27nH 27nH 1.5nH 4.7nH 2.2pF LL1608 Toko chip inductor LL1608 Toko chip inductor LL1005 Toko chip inductor LL1005 Toko chip inductor ATC 600S chip capacitor -Vg Schematic Vd 0.01uF 1.0uF 33pF 0.01uF 33pF 20 Ohm 33pF 27 nH L1 RF IN Eval board material - 31mil thick FR4 with 1/2 Ounce Cu on both sides 27 nH 33pF C1 RF OUT L2 D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from Vishay is used on the gate D.C. bias line for stability. 8 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500SOT89 Datasheet v3.0 REFERENCE DESIGN 2.4 TO 2.6GHZ FREQUENCY Gain P1dB OIP31 N.F. S11 S22 Vd Vg Id GHZ 2.4 2.6 dB 12.5 12.4 dBm 28 28 dBm 39 40 dB 1.0 0.9 dB -14 -16 dB -5 -6 V 5 5 V -0.4 to -0.6 -0.4 to -0.6 mA 200 200 1. Measured at 15dBm per tone Board Layout Vg Vd 33pF 0.01uF 33pF 20O Lg 33pF L1 Q1 0.01uF + 1.0uF + Ld C2 33pF 0.63" L2 C1 1.45" Component Values Component Value Description Lg Ld L1 L2 C1 & C2 18nH 18nH 0.0nH 3.9nH 1.0pF LL1608 Toko chip inductor LL1608 Toko chip inductor No Component (Cu Tab) Schematic -Vg Vd 0.01uF 1.0uF 0.01uF 33pF 20 Ohm LL1005 Toko chip inductor ATC 600S chip capacitor 33pF RF IN Eval board material - 31mil thick FR4 with 1/2 Ounce Cu on both sides 18 nH 33pF 18 nH C2 C1 33pF RF OUT L2 D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from Vishay is used on the gate D.C. bias line for stability. 9 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500SOT89 Datasheet v3.0 S-PARAMETERS: BIASED @ 5V, 50%IDSS: FREQ[GHz] 0.500 0.750 1.000 1.250 1.500 1.750 2.000 2.250 2.500 2.750 3.000 3.250 3.500 3.750 4.000 4.250 4.500 4.750 5.000 5.250 5.500 5.750 6.000 6.250 6.500 6.750 7.000 7.250 7.500 7.750 8.000 8.250 8.500 8.750 9.000 9.250 9.500 9.750 10.000 10.250 10.500 10.750 11.000 11.250 11.500 11.750 12.000 S11m 0.865 0.763 0.728 0.714 0.701 0.694 0.692 0.684 0.685 0.683 0.681 0.692 0.690 0.698 0.706 0.711 0.730 0.742 0.757 0.765 0.769 0.790 0.847 0.830 0.850 0.826 0.829 0.828 0.823 0.836 0.855 0.858 0.855 0.863 0.874 0.875 0.885 0.890 0.895 0.897 0.899 0.902 0.902 0.907 0.913 0.912 0.908 S11a -91.9 -118.7 -136.4 -149.6 -162.1 -171.3 179.8 171.3 163.7 155.8 148.1 141.4 134.1 127.7 120.8 114.3 108.9 103.2 98.2 92.4 87.7 83.4 77.1 73.0 67.3 63.8 60.2 56.4 52.8 48.9 44.5 38.3 32.9 27.9 22.0 16.9 11.9 7.4 3.8 0.5 -2.9 -5.6 -8.1 -10.5 -13.5 -16.4 -19.4 S21m 18.828 14.373 11.562 9.707 8.254 7.225 6.460 5.820 5.320 4.884 4.506 4.199 3.913 3.651 3.418 3.207 3.018 2.834 2.672 2.531 2.408 2.300 2.263 2.139 2.046 1.926 1.839 1.763 1.698 1.641 1.580 1.512 1.442 1.374 1.311 1.247 1.182 1.124 1.069 1.012 0.975 0.928 0.894 0.865 0.845 0.822 0.806 S21a 121.6 107.4 95.9 87.0 79.1 71.2 64.2 57.4 50.7 44.6 37.8 31.4 25.1 18.8 12.7 6.5 0.8 -5.0 -10.6 -16.1 -21.7 -26.9 -33.3 -38.4 -45.2 -49.9 -54.7 -59.5 -64.6 -69.8 -75.7 -81.5 -86.8 -92.3 -97.5 -102.5 -107.8 -112.5 -117.4 -121.7 -126.0 -130.2 -134.3 -138.4 -142.1 -146.4 -150.7 S12m 0.027 0.033 0.038 0.043 0.047 0.052 0.057 0.061 0.067 0.071 0.076 0.080 0.085 0.089 0.093 0.096 0.100 0.102 0.105 0.108 0.111 0.114 0.121 0.122 0.124 0.125 0.127 0.128 0.130 0.133 0.135 0.135 0.136 0.136 0.136 0.135 0.134 0.133 0.131 0.128 0.125 0.120 0.117 0.115 0.114 0.114 0.117 S12a 52.3 46.3 42.6 39.6 37.4 34.6 32.1 29.4 26.1 23.5 19.7 16.0 12.4 8.5 4.6 0.5 -3.5 -7.4 -11.1 -14.6 -18.6 -22.2 -27.1 -30.6 -36.0 -39.1 -42.7 -46.1 -49.9 -54.2 -58.9 -63.5 -68.0 -72.8 -77.2 -81.6 -86.4 -91.4 -96.4 -101.8 -106.8 -111.1 -114.6 -118.0 -120.9 -124.3 -128.3 S22m 0.293 0.287 0.293 0.285 0.284 0.288 0.279 0.279 0.271 0.273 0.273 0.276 0.290 0.302 0.318 0.335 0.349 0.367 0.381 0.396 0.406 0.417 0.457 0.457 0.476 0.471 0.471 0.470 0.477 0.491 0.507 0.531 0.552 0.575 0.596 0.618 0.637 0.652 0.663 0.673 0.680 0.693 0.698 0.701 0.695 0.691 0.684 S22a -130.2 -141.8 -154.9 -162.6 -172.6 -178.7 175.2 168.4 161.9 153.9 147.1 138.5 131.2 124.2 118.0 112.5 107.0 101.4 96.3 91.7 87.3 83.2 79.0 75.1 68.2 62.2 55.5 50.2 44.5 39.2 33.8 29.3 24.7 21.2 17.7 15.4 13.0 11.0 8.0 5.1 2.5 0.0 -2.9 -6.0 -9.7 -13.3 -18.1 10 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500SOT89 Datasheet v3.0 PACKAGE OUTLINE: (dimensions in millimeters – mm) TAPE DIMENSIONS AND PART ORIENTATION: FWYN ● Also available with horizontal part orientation ● Hub diameter = 80mm ● Devices per reel = 1000 11 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500SOT89 Datasheet v3.0 DEVICE FOOT PRINT: APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters, noise parameters and device model are available on request. RELIABILITY: A MTTF of 7.4 million hours at a channel temperature of 150°C is achieved for the process used to manufacture this device. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. Units in inches NOTE: Drawing available on Website ORDERING INFORMATION: PREFERRED ASSEMBLY INSTRUCTIONS: This package is compatible with both lead free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C. The maximum package temperature should not exceed 260°C. HANDLING PRECAUTIONS: PART NUMBER DESCRIPTION FPD1500SOT89 Packaged pHEMT FPD1500SOT89E RoHS Compliant Packaged pHEMT FPD1500SOT89CE RoHS Compliant Packaged pHEMT with enhanced passivation (Recommended for New To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. Designs) ESD/MSL RATING: These devices should be treated as Class 0 (0250 V) using the human body model as defined in JEDEC Standard No. 22-A114. EB1500SOT89(E)-BB 0.9 GHz evaluation board EB1500SOT89(E)-BA 1.85 GHz evaluation board EB1500SOT89(E)-BC 2.0 GHz evaluation board EB1500SOT89(E)-BD 2.2 GHz evaluation board EB1500SOT89(E)-BE 2.4 GHz evaluation board EB1500SOT89(E)-BG 2.6 GHz evaluation board EB1500SOT89(E)-AJ 5.3-5.75 GHz evaluation board The device has a MSL rating of Level 2. To determine this rating, preconditioning was performed to the device per, the Pb-free solder profile defined within IPC/JEDEC J-STD-020C, Moisture / Reflow sensitivity classification for non-hermatic solid state surface mount devices. 12 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com