n Outline Drawing IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Terminals *3 Ratings 1200 ± 20 300 600 300 600 2100 +150 -40 ∼ +125 2500 3.5 4.5 1.7 Units V V A W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) *3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=300mA VGE=15V IC=300A VGE=0V VCE=10V f=1MHz VCC=600V IC=300A VGE=± 15V RG=2.7Ω IF=300A VGE=0V IF=300A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 48000 17400 15480 0.65 0.25 0.95 0.35 Max. 4.0 60 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350 µs V ns • Thermal Characteristics Items Thermal Resistance Typ. 0.0125 Max. 0.06 0.12 Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=25°C T j=125°C V GE = 20V, 15V, 12V, 10V V GE = 20V, 15V, 12V, 10V 600 400 200 8V 400 Collector current : I Collector current : I C C [A] [A] 600 8V 200 0 0 0 1 2 3 4 Collector-Emitter voltage : V CE [V] 5 0 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage T j=25°C T j=125°C 10 [V] [V] CE 8 Collector-Emitter voltage V CE 2 Collector-Emitter voltage : V CE [V] 10 Collector-Emitter voltage :V 1 6 IC= 4 600A 300A 2 150A 0 8 6 IC= 4 600A 300A 2 150A 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V GE [V] 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =600V, R G =2.7 Ω , V GE =±15V, T j=25°C V CC =600V, R G =2.7 Ω , V GE ±15V, Tj=125°C t off 1000 100 10 400 Collector current : I C [A] tr on, t r, t off, t f tr Switching time : t Switching time : t on, t r, t off, t f tf 200 tf [nsec] [nsec] t on 0 t on 1000 t off 600 100 10 0 200 400 Collector current : I C [A] 600 Switching time vs. R G Dynamic input characteristics V CC =600V, I C = 3 0 0 A , V GE = ± 1 5 V , T j = 2 5 ° C T j= 2 5 ° C 1000 t off 600V [V] [nsec] 800 20 800V CE t on 1000 Collector-Emitter voltage : V on, t r, t off, t f Switching time : t 25 V CC = 4 0 0 V tr tf 100 1 600 15 400 10 200 5 0 0 10 0 1000 1500 2000 2500 3000 3500 4000 500 Gate resistance : R G [ Ω ] G a t e c h a r g e : Q G [nC] Forward current vs. Forward voltage Reverse recovery characteristics V GE = O V t rr, I rr vs. I F T j= 1 2 5 ° C 2 5 ° C [A] rr [A] Reverse recovery time 200 I rr 1 2 5 ° C :t Reverse recovery current : I F Forward current : I 400 t rr 1 2 5 ° C rr [nsec] 600 I rr 2 5 ° C t rr 2 5 ° C 100 0 0 1 2 3 4 5 0 200 Forward voltage : V F [V] 400 600 Forward current : I F [A] Reversed biased safe operating area Transient thermal resistance + V GE = 1 5 V , - V GE < 1 5 V , T j < 1 2 5 ° C , R G > 2.7 Ω 3000 2500 0,1 [A] IGBT 2000 C Collector current : I Thermal resistance : R th(j-c) [°C/W] Diode 0,01 SCSOA (non-repetitive pulse) 1500 1000 500 RBSOA (Repetitive pulse) 0,001 0,001 0 0,01 0,1 Pulse width : PW [sec] 1 0 200 400 600 800 1000 Collector-Emitter voltage : V C E [V] 1200 Capacitance vs. Collector-Emitter voltage Switching loss vs. Collector current T j=25°C V CC =600V, R G =2.7 Ω , V GE =±15V 125 ies , Switching loss : E 50 E off 25°C E on 125°C Capacitance : C 75 E on 25°C 25 100 C oes , C res [nF] 100 on, E off, E rr [mJ/cycle] E off 125°C E rr 125°C E rr 25°C C ies 10 C oes C res 1 0 0 100 200 300 400 500 600 0 Collector Current : I C [A] 5 10 15 20 25 30 Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708-Dallas, TX 75370 (972) 733-1700 233-1589 Fax (972) 233-0481 www.collmer.com P.O. Box 702708 - Dallas,Phone TX - (972) - (972) 381-9991 (fax) 35