FUJI 1MBC10-060

n Outline Drawing
Fuji Discrete Package IGBT
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings
( Tc=25°C)
Symbols
VCES
VGES
DC Tc= 25°C
IC 25
Collector Current
DC Tc=100°C
IC 100
1ms Tc= 25°C
IC PULSE
IGBT Max. Power Dissipation
PC
Operating Temperature
Tj
Storage Temperature
Tstg
Mounting Screw Torque
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
• Electrical Characteristics
Units
V
V
A
W
°C
°C
Nm
( at Tj=25°C )
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Switching Time
Ratings
600
± 20
20
10
80
75
+150
-40 ∼ +125
40
Turn-on Time
Turn-off Time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
tON
tr
tOFF
tf
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=10mA
VGE=15V IC=10A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=10A
VGE=±15V
RG=220Ω
VCC=300V
IC=10A
VGE=+15V
RG=22Ω
Min.
Symbols
Rth(j-c)
Test Conditions
Min.
Typ.
5.5
Max.
1.0
20
8.5
3.0
700
150
20
Units
mA
µA
V
pF
1.2
0.6
1.0
0.35
0.16
0.11
0.30
µs
µs
0.35
• Thermal Characteristics
Items
Thermal Resistance
Typ.
Max.
1.66
Units
°C/W
Collector Current vs. Collector-Emitter Voltage
Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C
25
V GE = 2 0 V , 1 5 V
V GE = 2 0 V , 1 5 V
12V
20
12V
[A]
[A]
20
C
C
15
15
Collector Current : I
Collector Current : I
T j= 1 2 5 ° C
25
10
10V
10V
10
5
5
8V
8V
0
0
0
1
2
3
4
5
6
0
1
Collector-Emitter Voltage : V CE [V]
Collector-Emitter Voltage vs. Gate-Emitter Voltage
5
6
[V]
10
10
CE
[V]
4
T j= 1 2 5 ° C
12
CE
8
6
4
IC =
20A
10A
2
8
Collector-Emitter Voltage : V
Collector-Emitter Voltage : V
3
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 2 5 ° C
12
2
Collector-Emitter Voltage : V CE [V]
5A
6
4
I C=
2
10A
20A
5A
0
0
0
5
10
15
20
25
0
Gate-Emitter Voltage : V GE [V]
5
10
15
20
25
Gate-Emitter Voltage : V GE [V]
Switching Time vs. Collector Current
Switching Time vs. Collector Current
V CC = 3 0 0 V , R G= 2 2 Ω , V GE = ± 1 5 V , T j= 2 5 ° C
V CC = 3 0 0 V , R G = 2 2 Ω , V GE = ± 1 5 V , T j= 1 2 5 ° C
1000
1000
, t r, t off , t f [nsec]
t off
tf
on
100
tf
t on
100
Switching Time : t
t on
Switching Time : t
on
, t r, t off , t f [nsec]
t off
tr
10
tr
10
0
5
10
15
Collector Current : I C [A]
20
0
5
10
15
Collector Current : I C [A]
20
Switching Time vs. R G
V CC =300V, I C = 1 0 A , V GE = ± 1 5 V , T j= 1 2 5 ° C
1000
, t r, t off , t f [nsec]
t on
t on
tf
tr
Switching Time : t
tr
tf
100
100
10
10
0
100
200
0
100
Gate Resistance : R G [ Ω ]
200
Gate Resistance : R G [ Ω ]
Dynamic Input Characteristics
Capacitance vs. Collector-Emitter Voltage
T j= 2 5 ° C
T j= 2 5 ° C
[V]
Capacitance : C
oes
Collector-Emitter Voltage : V
C ies
100
C oes
10
C res
0
5
10
15
20
25
30
V C C =200V, 300V, 400V
400
300
15
200
10
100
5
0
0
35
10
20
30
Gate Charge :
QG
40
[nQ]
0
60
50
Collector-Emitter Voltage : V CE [V]
Reverse Recovery Time vs. Forward Current
V R= 2 0 0 V ,
150
-di
Reverse Recovery Current vs. Forward Current
/ dt= 1 0 0 A / µ s e c
V R= 2 0 0 V ,
5
-di
/ dt = 1 0 0 A / µ s e c
4
rr
[A]
[nsec]
125°C
Reverse Recovery Current : I
rr
125°C
Reverse Recovery Time : t
100
25°C
50
0
3
25°C
2
1
0
0
5
10
15
Forward Current : I F [A]
20
CE
1000
25
GE
, C res , C ies [pF]
500
20
[V]
Switching Time : t
t off
on
on
t off
1000
0
5
10
15
Forward Current : I F [A]
20
Gate-Emitter Voltage : V
, t r, t off , t f [nsec]
Switching Time vs. R G
V CC =300V, I C = 1 0 A , V GE = ± 1 5 V , T j= 2 5 ° C
Reverse Biased Safe Operating Area
Typical Short Circuit Capability
+ V GE = 1 5 V , - V GE <1 5 V , T j<1 2 5 ° C , R G >2 2 Ω
V CC = 4 0 0 V , R G = 2 2 Ω , T j= 1 2 5 ° C
25
150
60
t SC
I SC
Short Circuit Current : I
10
20
5
0
0
0
100
200
300
400
500
600
700
5
10
15
0
25
20
Gate Voltage : V GE
Collector-Emitter Voltage : V CE [V]
[V]
Reverse Recovery Characteristics vs.
Forward Voltage vs. Forward Current
[µs]
50
SC
40
-di
/ dt
I F = 1 0 A , T j= 1 2 5 ° C
25
10
250
I rr
[nsec]
T j= 1 2 5 ° C 2 5 ° C
200
8
150
6
100
4
Forward Current : I
15
10
5
0
0,0
2
50
t rr
0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0
100
200
300
-di
Forward Voltage : V F [V]
/ dt
400
500
0
600
[A/µsec]
Thermal Resistance : Rth(j-c) [°C/W]
Transient Thermal Resistance
10
1
IGBT
10
10
10
0
-1
-2
10
-4
10
-3
10
-2
10
-1
10
0
P u l s e W i d t h : P W [sec]
P.O. Box 702708-Dallas,
75370
PhoneTX
(972)
233-1589
Fax- (972)
(972) 381-9991
233-0481 (fax)
www.collmer.com
P.O. Box TX
702708
- Dallas,
- (972)
733-1700
Reverse Recovery Current : I
F
Reverse Recovery Time : t
rr
[A]
rr
20
[A]
Collector Current : I
15
Short Circuit Time : t
100
C
SC
[A]
[A]
20