n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings ( Tc=25°C) Symbols VCES VGES DC Tc= 25°C IC 25 Collector Current DC Tc=100°C IC 100 1ms Tc= 25°C IC PULSE IGBT Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque Items Collector-Emitter Voltage Gate -Emitter Voltage • Electrical Characteristics Units V V A W °C °C Nm ( at Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Switching Time Ratings 600 ± 20 20 10 80 75 +150 -40 ∼ +125 40 Turn-on Time Turn-off Time Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=10mA VGE=15V IC=10A VGE=0V VCE=10V f=1MHz VCC=300V IC=10A VGE=±15V RG=220Ω VCC=300V IC=10A VGE=+15V RG=22Ω Min. Symbols Rth(j-c) Test Conditions Min. Typ. 5.5 Max. 1.0 20 8.5 3.0 700 150 20 Units mA µA V pF 1.2 0.6 1.0 0.35 0.16 0.11 0.30 µs µs 0.35 • Thermal Characteristics Items Thermal Resistance Typ. Max. 1.66 Units °C/W Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 25 V GE = 2 0 V , 1 5 V V GE = 2 0 V , 1 5 V 12V 20 12V [A] [A] 20 C C 15 15 Collector Current : I Collector Current : I T j= 1 2 5 ° C 25 10 10V 10V 10 5 5 8V 8V 0 0 0 1 2 3 4 5 6 0 1 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 5 6 [V] 10 10 CE [V] 4 T j= 1 2 5 ° C 12 CE 8 6 4 IC = 20A 10A 2 8 Collector-Emitter Voltage : V Collector-Emitter Voltage : V 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 2 5 ° C 12 2 Collector-Emitter Voltage : V CE [V] 5A 6 4 I C= 2 10A 20A 5A 0 0 0 5 10 15 20 25 0 Gate-Emitter Voltage : V GE [V] 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current Switching Time vs. Collector Current V CC = 3 0 0 V , R G= 2 2 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 3 0 0 V , R G = 2 2 Ω , V GE = ± 1 5 V , T j= 1 2 5 ° C 1000 1000 , t r, t off , t f [nsec] t off tf on 100 tf t on 100 Switching Time : t t on Switching Time : t on , t r, t off , t f [nsec] t off tr 10 tr 10 0 5 10 15 Collector Current : I C [A] 20 0 5 10 15 Collector Current : I C [A] 20 Switching Time vs. R G V CC =300V, I C = 1 0 A , V GE = ± 1 5 V , T j= 1 2 5 ° C 1000 , t r, t off , t f [nsec] t on t on tf tr Switching Time : t tr tf 100 100 10 10 0 100 200 0 100 Gate Resistance : R G [ Ω ] 200 Gate Resistance : R G [ Ω ] Dynamic Input Characteristics Capacitance vs. Collector-Emitter Voltage T j= 2 5 ° C T j= 2 5 ° C [V] Capacitance : C oes Collector-Emitter Voltage : V C ies 100 C oes 10 C res 0 5 10 15 20 25 30 V C C =200V, 300V, 400V 400 300 15 200 10 100 5 0 0 35 10 20 30 Gate Charge : QG 40 [nQ] 0 60 50 Collector-Emitter Voltage : V CE [V] Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , 150 -di Reverse Recovery Current vs. Forward Current / dt= 1 0 0 A / µ s e c V R= 2 0 0 V , 5 -di / dt = 1 0 0 A / µ s e c 4 rr [A] [nsec] 125°C Reverse Recovery Current : I rr 125°C Reverse Recovery Time : t 100 25°C 50 0 3 25°C 2 1 0 0 5 10 15 Forward Current : I F [A] 20 CE 1000 25 GE , C res , C ies [pF] 500 20 [V] Switching Time : t t off on on t off 1000 0 5 10 15 Forward Current : I F [A] 20 Gate-Emitter Voltage : V , t r, t off , t f [nsec] Switching Time vs. R G V CC =300V, I C = 1 0 A , V GE = ± 1 5 V , T j= 2 5 ° C Reverse Biased Safe Operating Area Typical Short Circuit Capability + V GE = 1 5 V , - V GE <1 5 V , T j<1 2 5 ° C , R G >2 2 Ω V CC = 4 0 0 V , R G = 2 2 Ω , T j= 1 2 5 ° C 25 150 60 t SC I SC Short Circuit Current : I 10 20 5 0 0 0 100 200 300 400 500 600 700 5 10 15 0 25 20 Gate Voltage : V GE Collector-Emitter Voltage : V CE [V] [V] Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current [µs] 50 SC 40 -di / dt I F = 1 0 A , T j= 1 2 5 ° C 25 10 250 I rr [nsec] T j= 1 2 5 ° C 2 5 ° C 200 8 150 6 100 4 Forward Current : I 15 10 5 0 0,0 2 50 t rr 0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 100 200 300 -di Forward Voltage : V F [V] / dt 400 500 0 600 [A/µsec] Thermal Resistance : Rth(j-c) [°C/W] Transient Thermal Resistance 10 1 IGBT 10 10 10 0 -1 -2 10 -4 10 -3 10 -2 10 -1 10 0 P u l s e W i d t h : P W [sec] P.O. Box 702708-Dallas, 75370 PhoneTX (972) 233-1589 Fax- (972) (972) 381-9991 233-0481 (fax) www.collmer.com P.O. Box TX 702708 - Dallas, - (972) 733-1700 Reverse Recovery Current : I F Reverse Recovery Time : t rr [A] rr 20 [A] Collector Current : I 15 Short Circuit Time : t 100 C SC [A] [A] 20