GaAs MMIC
GN01100B
GaAs IC (with built-in ferroelectric)
Unit: mm
0.12 +0.05
−0.02
1.25±0.1
■ Features
0.1
4
2.1±0.1
5
6
0.425
0.2±0.05
0.2±0.1
For the preamplifier of the transmitting section in a cellular phone
Other communication equipment
1
3
2
0.65
0.425
R0.2
• Super miniature S-Mini 6-pin package (2125 size)
• Transmitter amplifier : Wide dynamic range on low operation current
: Gain control function built-in
0.65
6 - 0° to 10°
0.2
2.0±0.1
Circuit current
Gate control voltage
Symbol
Ratings
Unit
VDD
5
V
IDD
80
mA
VAGC
0 to 3
V
Max input power
PIN
−5
dBm
Allowable power dissipation
PD
150
mW
Operating ambient temperature
Topr
−30 to +90
°C
Storage temperature
T stg
−40 to +120
°C
0 to 0.1
Parameter
Power supply voltage
0.7±0.1
0.9±0.1
■ Absolute Maximum Ratings Ta=25 °C
1 : RFIN
4 : VDD2
2 : V DD1
5 : GND
3 : VAGC
6 : VREF
S Mini Type Package (6-pin)
EIAJ : SC-88
Marking Symbol : HU
■ Electrical Characteristics VDD1=VDD2=3.0 V, f=906 MHz, Ta=25 °C±3 °C
Parameter
Symbol
*1
IDD
VAGC=2.0 V, PIN=−20 dBm
Power gain 1
*1
PG1
VAGC=2.0 V, PIN=−20 dBm
Power gain 2
*1
PG2
VAGC=0.5 V, PIN=−20 dBm
DR
PG1−PG2
30
34
GS
Pin=−20 dBm
25
Circuit current
Dynamic range
Gain control sensitivity
* 1, 2
Conditions
min
20
typ
max
Unit
37
45
mA
−5
dB
49
90
dB/V
23
−10
dB
dB
Adjacent channel leakage
power (ACP) 1 *1, 3
ACP1
VAGC=2.0 V, POUT=5 dBm
IS-95 modulation, 900 kHz Detuning
30 kHz Bandwidth
−54
−50
dBc
Adjacent channel leakage
power (ACP) 1 *1, 3
ACP2
VAGC=2.0 V, Pout=5 dBm
IS-95 modulation, 1.98 MHz Detuning
30 kHz Bandwidth
−74
−65
dBc
Note) *1 : Refer to measurement circuit.
*2 : {PG(VAGC=1.6V)[dB]−PG(V AGC=1.2V)[dB]/0.4[V]
*3 : Design-guaranteed items.
1
GN01100B
GaAs MMIC
■ Measurement Circuit
33 pF
10 nF
39 nH
10 nF
33 pF
VDD2
VREF
5Ω
6
5
4
2
3
2 pF
2
VAGC
10 nF
10 nH
33 nF
240 Ω 100 pF
10 nF
4.7 kΩ
33 pF
2 kΩ
RFIN
1
Out
VDD1