GP1S21/GP1S22 Subminiature Photointerrupter GP1S21/GP1S22 ■ Features ■ Outline Dimensions 1. Ultra-compact 2. PWB mounting type package 3. High sensing accuracy Slit width ; GP1S21 : 0.8mm GP1S22 : 0.3mm ( ( Unit : mm ) Internal connection diagram 2 3 ) 4 1 3 Emitter 4 Collector 1 Anode 2 Cathode ■ Applications 1. Cameras 2. Floppy disk drives 4.2 4.2 ★ Slit width ( Light axis ) 1.5 1.2 3.9 5.2 2.8 (1.0) (C0.8) 4.0MIN. (C0.3) 4 - 0.15 ❈3.1 1 2 ■ Absolute Maximum Ratings Output ❈2.5 4 0.1 0 Hole ★ Slit width GP1S21 : 0.8mm GP1S22 : 0.3mm * Tolerance:± 0.2mm * Burr's dimensions : 0.15MAX. * Rest of gate : 0.3MAX. * ( ) : Reference dimensions * The dimensions indicated by ❈ refer to those measured from the lead base. 3 ( Ta = 25˚C ) Symbol IF VR P VCEO VECO IC PC Ptot T opr T stg T sol Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 Unit mA V mW V V mA mW mW ˚C ˚C ˚C 1mm or more Input Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature φ 1.5+- Rest of gate (2) 4 - 0.5 Soldering area *1 For 5 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP1S21/GP1S22 ■ Electro-optical Characteristics Parameter Forward voltage Reverse current Collector dark current Input Output Transfer characteristics Symbol VF IR I CEO GP1S21 GP1S22 GP1S21 GP1S22 Rise time Fall time Collector Current Collector-emitter saturation voltage Response time ( Ta = 25˚C ) Ic V CE(sat) tr tf I C = 0.1mA, V CE = 5V, R L = 1kΩ 120 50 100 Power dissipation P ( mW ) 60 40 30 20 10 TYP. 1.2 50 50 MAX. 1.4 10 1 x 10 -7 260 1300 0.4 0.4 150 150 P tot P, P c 80 60 40 20 0 - 25 0 25 50 75 85 0 - 25 100 0 Ambient temperature T a ( ˚C ) 25 75 85 50 100 Ambient temperature T a ( ˚C ) Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Collector Current vs. Forward Current 2.0 500 T a = 75˚C 50˚C 100 V CE = 5V T a = 25˚C 1.8 25˚C 0˚C - 25˚C 1.6 Collector current I C ( mA ) 200 Forward current I F ( mA ) MIN. 27 100 - Fig. 2 Power Dissipation vs. Ambient Temperature Fig. 1 Forward Current vs. Ambient Temperature Forward current I F ( mA ) Conditions I F = 20mA V R = 3V V CE = 20V V CE = 5V, I F = 1.5mA V CE = 5V, I F = 5mA I F = 3mA, I C = 27 µ A I F = 10mA, I C = 50 µ A 50 20 10 5 1.4 1.2 GP1S21 1.0 0.8 GP1S22 0.6 0.4 2 0.2 1 0 0 0.5 1 1.5 2 2.5 Forward voltage V F ( V ) 3 3.5 0 1 2 3 4 5 6 7 Forward current I F ( mA ) 8 9 10 Unit V µA A µA µA V V µs µs GP1S21/GP1S22 Fig. 5-a Collector Current vs. Collector-emitter (GP1S21 ) Voltage 11 Fig. 5-b Collector Current vs. Collector-emitter (GP1S22 ) Voltage 11 P C ( MAX. ) 10 9 ( mA ) I F = 50mA 40mA I F = 50mA 8 7 40mA 6 Collector current I C ( mA ) 7 Collector current I C 9 8 P C ( MAX. ) 10 30mA 5 4 20mA 3 10mA 2 1 0 1.5mA 0 1 2 3 4 5 6 7 8 9 6 4 20mA 3 2 10mA 1 5mA 0 10 30mA 5 0 1 Collector-emitter voltage V CE ( V ) ( mA ) C Collector current I 0.16 V CE = 5V I F = 1.5mA (GP1S21 ) I F = 5mA ( GP1S22 ) IF = IF = I C= I C= 0.14 0.4 0.3 GP1S21 0.2 4 5 6 7 8 9 10 Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage V CE(sat) (V) GP1S22 0.5 3 Collector-emitter voltage V CE ( V ) Fig. 6 Collector Current vs. Ambient Temperature 0.6 2 0.1 0.12 3mA (GP1S21 ) 10mA (GP1S22 ) 27 µ A (GP1S21 ) 50 µ A (GP1S22 ) GP1S21 0.10 GP1S22 0.08 0.06 0.04 0.02 0 -25 0 25 50 75 0 -25 100 0 Ambient temperature T a (˚C) 25 50 75 100 Ambient temperature T a (˚C) Fig. 8 Response Time vs. Load Resistance Test Circuit for Response Time 500 200 Response time ( µ s ) 100 V CE= 5V I C= 100µ A T a = 25˚C tf 20 tr td 10 Input VCC 50 Input RD RL Output Output 10% 90% td 5 ts tr 2 1 ts 0.5 0.3 0.01 0.1 0.2 0.5 1 2 5 10 20 Load resistance R L ( kΩ ) 50 100 tf GP1S21/GP1S22 Fig. 9 Collector Dark Current vs. Ambient Temperature 10 - 6 V CE= 20V 2 Relative collector current ( % ) Collector dark current I CEO ( A ) 5 Fig. 10-a Relative Collector Current vs. Shield Distance ( 1 ) ( GP1S21) 10 - 7 5 2 10 - 8 5 2 10 - 9 I F = 1.5mA V CE = 5V T a = 25˚C 100 L Shield Detector - + 0 ( Detector center ) 50 5 2 10 - 10 I F = 5mA V CE = 5V T a = 25˚C L Shield Detector + - 50 0 ( Detector center ) 0 0 1 Shield distance L ( mm ) 2 3 I F = 1.5mA ( GP1S21 ) I F = 5mA ( GP1S22 ) V CE = 5V T a = 25˚C 100 Shield - Detector + 0 50 0 -2 -1 0 1 2 3 Shield distance L ( mm ) ● - 1 Fig.11 Relative Collector Current vs. Shield Distance ( 2 ) Relative collector current ( % ) Relative collector current ( % ) Fig.10-b Relative Collector Current vs. Shield Distance ( 1 ) ( GP1S22) 100 0 - 2 100 ( Detector center ) 25 50 75 Ambient temperature T a ( ˚C ) L 0 Please refer to the chapter “ Precautions for Use ” . -2 -1 0 1 2 Shield distance L ( mm ) 3