GS8050xU Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistors (NPN) TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • NPN Silicon Epitaxial Planar Transistors for amplifier applications. Especially suitable for low power output stages such as portable radios in class-B push-pull operation. • Complementary to GS8550xU • The “x” in the part number can be B, C or D, depending on the current gain. Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk - 5K per container, 20K per box E7/4K per Ammo mag., 20K per box Bottom View Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V IC 800 Collector Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Ptot RθJA mA (1) mW (1) °C/W 625 200 Junction Temperature Tj 150 °C Storage Temperature Range TS –55 to +150 °C Notes: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case Document Number 88193 09-May-02 www.vishay.com 1 GS8050xU Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol J DC Current Gain Current Gain Group B C D Test Condition Min Typ Max VCE = 1V, IC = 5mA 45 135 — VCE = 1V, IC = 100mA 85 120 160 — — — 160 200 300 VCE = 1V, IC = 800mA — 50 — hFE Unit — Collector-Emitter Breakdown Voltage V(BR)CEO IC = 2mA, IB = 0 25 — — V Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 40 — — V Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 6 — — V Collector Cut-off Current ICBO VCB = 35V, IE = 0 — — 100 nA Emitter Cut-off Current IEBO VEB = 6V, IC = 0 — — 100 nA Collector-Emitter Saturation Voltage VCE(sat) IC = 800mA, IB = 80mA — 0.51 — V Base-Emitter Saturation Voltage VBE(sat) IC = 800mA, IB = 80mA — 1.2 — V Base-Emitter ON Voltage VBE(on) VCE = 1V, IC = 10mA — 0.66 1.0 V COB VCB = 10V, IE = 0, ƒ = 1MHz — 9 — pF ƒT VCE = 10V, IC = 50mA — 100 — MHz Output Capacitance Gain-Bandwidth Product www.vishay.com 2 Document Number 88193 09-May-02