GWM 160-0055P3 VDSS = 55 V = 160 A ID25 Ω RDSon typ. = 2.3 mΩ Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G5 S3 S5 G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 L- Applications MOSFETs Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C VGS 55 V ±20 V ID25 ID90 TC = 25°C TC = 90°C 160 120 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 135 90 A A Symbol Conditions RDSon on chip level at VGS = 10 V VGSth VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2.3 3.8 2 2.9 mΩ mΩ 4 V 1 µA mA 0.2 µA 0.1 VGS = ±20 V; VDS = 0 V Qg Qgs Qgd VGS= 10 V; VDS = 44 V; ID = 25 A 86 18 25 nC nC nC td(on) tr td(off) tf VGS= 10 V; VDS = 30 V; ID = 25 A; RG = 10 Ω 25 50 70 40 ns ns ns ns VF (diode) IF = 80 A; VGS= 0 V t rr (diode) IF = 20 A; -di/dt = 100 A/µs; VDS = 30 V RthJC RthJH with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 0.9 1.4 AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer V 100 ns 1.7 0.85 K/W K/W 447 Symbol 1-3 GWM 160-0055P3 Component Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 min FC Mounting force with clip Symbol Conditions 300 A -40...+175 -55...+125 °C °C 1000 V~ 50 - 250 N Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. Rpin to chip CP coupling capacity between shorted pins and mounting tab in the case Weight typ. 0.6 mΩ 160 pF 25 g Thermal Response junction - case (typ.) Cth1 = 0.039 J/K; Rth1 = 0.28 K/W Cth2 = 0.069 J/K; Rth2 = 0.57 K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 447 Dimensions in mm (1 mm = 0.0394") 2-3 GWM 160-0055P3 2.0 1.2 V VGS = 8 V 10 V 12 V 0.9 1.5 RDSon RDSon(25°C) VDS 1.0 0.6 0.5 0.3 TVJ = 25°C 0.0 -50 0.0 0 100 200 300 A 0 50 ID Fig. 1: typ. output characteristics [VDS = ID (RDSon + 2x Rpin to chip)] 100 TVJ 150 C Fig. 2: typ. dependence of RDSon on temperature 10 300 A ID = 25 A V 250 VGS ID 8 200 6 VDS = 14 V 150 VDS = 44 V 4 100 TVJ = 125°C 50 2 TVJ = 25°C 0 0 0 1 2 3 4 5 6 7 VGS 0 V 8 20 40 60 80 100 nC QG Fig. 3: typ.transfer characteristics Fig. 4: typ. gate charge characteristics 1 400 A VGS = 0 V 350 K/W 0.1 300 -ID 250 ZthJC 0.01 200 150 TVJ = 125°C 0.001 100 50 TVJ = 25°C Fig. 5: typ. conduction characteristics of body diode 0.0001 0.00001 0.001 0.01 0.1 1 s 10 t Fig. 6: typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 0.0001 447 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 V VSD 3-3