HI-SINCERITY Spec. No. : MOS200601 Issued Date : 2006.02.01 Revised Date : 2006.02.20 Page No. : 1/4 MICROELECTRONICS CORP. H05N50 Series H05N50 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. 1 2 Features 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements 1 Thermal Characteristics Symbol Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. 2 3 H05N50 Series Symbol Parameter RθJC 3 Value Units TO-220AB 1.71 TO-220FP 3.3 62 D °C/W G °C/W S Absolute Maximum Ratings Symbol VDSS Parameter Units 500 V ID Drain to Current (Continuous) 5 A IDM Drain to Current (Pulsed) (*1) 20 A VGS Gate-to-Source Voltage (Continue) ±30 V Total Power Dissipation TO-220AB TO-220FP 80 38 W Derate above 25°C TO-220AB TO-220FP 0.59 0.3 W/°C EAS Single Pulse Avalanche Energy (*2) 300 mJ IAR Avalanche Current (*1) 5 A EAR Repetitive Avalanche Energy (*1) 7.4 mJ dv/dt Peak Diode Recovery (*3) 5 V/ns Operating Temperature Range -55 to 150 °C Tstg Storage Temperature Range -55 to 150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 300 °C PD Tj Drain-Source Voltage Value *1: Repetitive rating; pulse width limited by max. junction temperature *2: VDD=50V, starting Tj=25°C, L=24mH, RG=25Ω, IAS=4.5A *3: ISD≤4.5A, di/dt≤75A/us, VDD≤V(BR)DSS, TJ≤150°C H05N50E, H05N50F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200601 Issued Date : 2006.02.01 Revised Date : 2006.02.20 Page No. : 2/4 MICROELECTRONICS CORP. ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol V(BR)DSS IDSS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Drain-Source Leakage Current (VDS=500V, VGS=0V) Min. Typ. Max. Unit 500 - - V - - 1 uA 50 uA Drain-Source Leakage Current (VDS=400V, VGS=0V, Tj=125°C) IGSSF Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) - - 100 nA IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) - - -100 nA VGS(th) Gate Threshold Voltage (VDS=VGS, ID=250uA) 2 - 4 V RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=2.5A)(*4) - - 1.4 Ω 2.5 - - S - 900 - - 150 - gFS Forward Transconductance (VDS=50V, ID=2.7A)(*4) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 85 - td(on) Turn-on Delay Time - 15 - - 60 - - 90 - - 55 - - - 45 - - 10 - - 30 tr td(off) tf Rise Time Turn-off Delay Time VDS=25V, VGS=0V, f=1MHz (VDD=250V, ID=5A, RG=50Ω, RD=79Ω)(*4) Fall Time pF ns Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge LD Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) - 4.5 - nH LS Internal Source Inductance (Measured from the drain lead 0.25” from package to source bond pad) - 7.5 - nH Min. Typ. - - 2 - ** - - - 640 ns - - 1.5 V (VDS=400V, ID=5A, VGS=10V) (*4) nC *4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2% Source-Drain Diode Symbol Qrr Characteristic Reverse Recovery Charge ton Forward Turn-On Time trr Reverse Recovery Time VSD Diode Forward Voltage IF=3.1A, di/dt=100A/us, Tj=25°C (*4) IS=4.5A, VGS=0V, Tj=25°C (*4) Max. Units uC **: Negligible, Dominated by circuit inductance H05N50E, H05N50F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200601 Issued Date : 2006.02.01 Revised Date : 2006.02.20 Page No. : 3/4 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E C D E 0 5N5 0 Date Code H K M I 3 G N 2 O P J L Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1 Tab Control Code Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α4 α1 Pb Free Mark Pb-Free: " . " (Note) Normal: None H E O C D α3 α2 α5 Date Code G I J N 2 K 1 M L Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source 3 F F 0 5N5 0 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 α1/2/4/5 α3 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-2521-2056 Fax: 886-2-2563-2712 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-598-3621~5 Fax: 886-3-598-2931 H05N50E, H05N50F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200601 Issued Date : 2006.02.01 Revised Date : 2006.02.20 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time Pb devices. 245 C ±5 C 10sec ±1sec Pb-Free devices. 260 C ±5 C 10sec ±1sec Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o 60~150 sec 240 C +0/-5 C Peak Temperature (TP) o 3. Flow (wave) soldering (solder dipping) Products H05N50E, H05N50F o o o o HSMC Product Specification