HSMC H2N7002KSN

HI-SINCERITY
Spec. No. : MOS200809
Issued Date : 2008.11.18
Revised Date :2010.04.14
Page No. : 1/4
MICROELECTRONICS CORP.
H2N7002KSN Pin Assignment & Symbol
H2N7002KSN
3
N-CHANNEL TRANSISTOR
1
2
3-Lead Plastic SOT-323
Package Code: SN
Pin 1: Gate 2: Source 3: Drain
Description
N-channel enhancement-mode MOS transistor.
ESD protected
Absolute Maximum Ratings
Drain-Source Voltage ............................................................................................................................................ 60 V
Drain-Gate Voltage (RGS=1MΩ)............................................................................................................................. 60 V
Gate-Source Voltage ........................................................................................................................................... ±20 V
(1)
Continuous Drain Current (TA=25°C) ............................................................................................................. 200 mA
(1)
Continuous Drain Current (TA=100°C) ........................................................................................................... 115 mA
(2)
Pulsed Drain Current (TA=25°C) .................................................................................................................... 800 mA
Storage Temperature............................................................................................................................... -55 to 150 °C
Operating Junction Temperature ............................................................................................................. -55 to 150 °C
Lead Temperature, for 10 second Soldering ...................................................................................................... 260 °C
Gate Source ESD Rating……………………………………………………………………………………………….… 2KV
Electrical Characteristics (TA=25°C)
Parameter
Symbol
Test Conditions
Min
Typ.
Max
Unit
-
-
V
Drain-Source Breakdown Voltage
BVDSS
VGS=0, ID=10uA
60
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=0.25mA
1
-
2.0
V
Gate Source Leakage Current, Forward
IGSS/F
VGS=+20V, VDS=0
-
-
10
uA
Gate Source leakage Current, Reverse
IGSS/R
VGS=-20V, VDS=0
-
-
-10
uA
Zero Gate Voltage Drain Current
IDSS
VDS=48V, VGS=0
-
-
10
uA
On-State Drain Current
ID(ON)
VDS>2VDS(ON), VGS=10V
500
-
-
mA
Static Drain-Source On-State Voltage
VDS(ON)
ID=50mA, VGS=5V
-
-
0.375
V
ID=500mA, VGS=10V
-
-
3.75
V
5.3
Ω
ID=75mA, VGS=4.5V
Static Drain-Source On-State Resistance
RDS(ON)
ID=50mA, VGS=5V
-
-
5.0
Ω
ID=500mA, VGS=10V
-
-
5.0
Ω
80
-
-
mS
-
20
-
nS
-
40
-
nS
-
50
-
25
pF
-
5
pF
Forward Transconductance
GFS
VDS>2VDS(ON), ID=200mA
Turn-on Delay Time
td(on)
Turn-off Delay Time
td(off)
(VDD=50V, RD=250Ω,
VGS=10V, RG=50Ω)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=25V, VGS=0, f=1MHz
pF
(1)The Power Dissipation of the package may result in a continuous drain current.
(2)Pulse Width≤300us, Duty cycle≥2%.
H2N7002KSN
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200809
Issued Date : 2008.11.18
Revised Date :2010.04.14
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
1.4
VGS=10V
VGS=7V VGS=6V
1.6
1.4
ID-Drain Current
ID-Drain Current
1.2
VGS=5V
1
0.8
VGS=4V
0.6
0.4
VGS=3V
0.2
1.2
Tj=25℃
1
0.8
Tj=125℃
0.6
0.4
0.2
0
0
0
1
2
3
4
5
0
4
1.6
3.5
1.4
VGS=4.5V at 200mA
3
2.5
2
1
2
3
4
VGS- Gate-to-Source Voltage(v) Transfer
Characteristics
VGS(th) Varian
RDS(on)-OnResistance(Normaliz
VDS-Drain-to-Source Voltage(V) Output
Characteristics
VGS=10V at 500mA
1.5
1
1.2
ID=250uA
1
0.8
0.6
0.4
0.2
0.5
0
0
25
25
50
75
100
125
150
50
75
100
125
150
TJ-Junction Temperature(℃) Threshold
Voltage Variance Over Temperature
TJ-Junction Temperature(℃) OnResistance VS.Junction Temperature
Safe Operating Area
3
10
2.5
ID=500mA
2
Collector Current-IC (mA)
RDS(on)-On-Resistance
Tj=75
1.5
ID=200mA
1
0.5
0
0
2
4
6
8
VGS-Gate-to-Source Voltage(v) OnResistance vs.Gate-Source Voltage
PT=1ms
1
PT=100ms
PT=10ms
10
0.1
1
10
100
1000
Forward Biased Voltage-VCE (V)
H2N7002KSN
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200809
Issued Date : 2008.11.18
Revised Date :2010.04.14
Page No. : 3/4
SOT-323 (SC-70) Dimension
Marking:
A
L
3
S
B
1
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
2
D
Pin Style: 1.Gate 2.Source 3.Drain
G
C
N
K
H
DIM
A
B
C
D
G
H
J
K
L
N
S
Min.
Max.
1.80
2.20
1.15
1.35
0.80
1.00
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 (REF)
0.65 (BSC)
0.70 (REF)
2.00
2.40
Unit: mm
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
3-Lead SOT-323 Plastic
Surface Mounted Package
HSMC Package Code: SN
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office
• Head Office (Hi-Sincerity Microelectronics Corp.): 5/F., Golden Harvest Building 15 Wang Chiu Road, Kowloon Bay, Hong Kong
Tel: +852-2755-7162 Fax: +852-2755- 7795
AVANTICS : Shanghai Address: No.399, Cai Lum Rd. Zhangjiang Technology Industrial Park Pudong, Shanghai 201210, China
Tel: +86(21) 61637118 Fax: +86(21)61637006
H2N7002KSN
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200809
Issued Date : 2008.11.18
Revised Date :2010.04.14
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H2N7002KSN
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification