HUASHAN H933

PNP S I L I C O N T R AN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H933
█ APPLICATIONS
General Purpose application..
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………400mW
1―Emitter,E
2―Collector,C
3―Base,B
VCBO——Collector-Base Voltage………………………………-60V
VCEO——Collector-Emitter Voltage……………………………-50V
V EBO ——Emitter-Base Voltage………………………………-6V
I C ——Collector Current……………………………………-150mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
-60
V
IC=-50μA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
-50
V
IC=-1mA,
BVEBO
Emitter-Base Breakdown Voltage
-6
V
IE=-50μA,IC=0
DC Current Gain
120
HFE
VCE(sat)
IB=0
VCE=-6V, IC=-1mA
560
Collector- Emitter Saturation Voltage
-0.5
V
IC=-50mA, IB=-5mA
ICBO
Collector Cut-off Current
-100
nA
VCB=-60V, IE=0
IEBO
Emitter Cut-off Current
-100
nA
VEB=-6V, IC=0
fT
Cob
Current Gain-Bandwidth Product
5.0
MHz
pF
140
4.0
Output Capacitance
VCE=-12V,IC=-2mA,f=30MHz
VCB=-12V, IE=0,f=1MHz
█ hFE Classification
Q
120—270
R
180—390
K
270—560
Shantou Huashan Electronic Devices Co.,Ltd.
H933
Shantou Huashan Electronic Devices Co.,Ltd.
H933