HAT1035R Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0845-0100 Rev.1.00 Apr.22,2005 Features • • • • Low on-resistance Capable of –4 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 8 7 7 8 D D 5 6 D D 65 1 4 23 2 G 4 G S1 MOS1 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S3 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Note3 Ratings –150 ±15 –0.25 –1 –0.25 1 Channel dissipation Pch 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Rev.1.00 Apr. 22, 2005 page 1 of 3 Unit V V A A A W W °C °C HAT1035R Electrical Characteristics (Ta = 25°C) Item Symbol V(BR)DSS Drain to Source breakdown voltage Gate to Source breakdown voltage V(BR)GSS Gate to Source leak current IGSS Zero Gate voltage Drain current IDSS Gate to Source cutoff voltage VGS(off) RDS(on) Static Drain to Source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–Drain diode forward voltage Body–Drain diode reverse recovery time Notes: 4. Pulse test RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Rev.1.00 Apr. 22, 2005, 2004 page 2 of 3 Min –150 Typ — Max — Unit V Test Conditions ID = –10 mA, VGS = 0 ±15 — — –1.0 — — — 0.29 — — — — — — — — — — — 5.0 6.0 7.0 0.45 92 37 10 10 13 22 15 — ±10 –5 –2.0 6.2 7.5 10.0 — — — — — — — — V µA µA V Ω Ω Ω S pF pF pF ns ns ns ns IG = ±100 µA, VDS = 0 VGS = ±12 V, VDS = 0 VDS = –150 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –0.25 A, VGS = –10 VNote4 ID = –0.25 A, VGS = –4 V Note4 ID = –1 A, VGS = –5 V Note4 ID = –0.25 A, VDS = –10 V Note4 — — –0.9 80 –1.4 — V ns IF = –0.25 A, VGS = 0 Note4 VDS = –10 V VGS = 0 f = 1 MHz VGS = –5 V, ID = –0.25 A, VDD ≅ –30 V IF = –0.25 A, VGS = 0 diF/ dt = 50 A/µs HAT1035R Package Dimensions RENESAS Code PRSP0008DD-D Package Name FP-8DAV MASS[Typ.] 0.085g F JEITA Package Code P-SOP8-3.95 × 4.9-1.27 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) *3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 5.80 e 8° 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT1035R-EL-E Quantity 2500 pcs. Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Apr. 22, 2005, 2004 page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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