HAT2179R Silicon N Channel MOS FET High Speed Power Switching REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 8 5 6 7 8 D D D D 5 76 12 34 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID Note1 ID (pulse) IDR Note1 IDR (pulse) Note2 Pch Tch Tstg Ratings 600 ±30 0.7 2.0 0.7 2.0 2.5 150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 1 of 6 Unit V V A A A A W °C °C HAT2179R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 600 — — 3.0 0.8 — Typ — — — — 1.2 3.5 Max — 1 ±0.1 5.0 — 4.5 Unit V µA µA V S Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 280 31 3.8 24 15 50 58 10 1.6 5.4 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC VDF — — 0.8 200 1.2 — V ns Body-drain diode reverse recovery time Notes: 3. Pulse test REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 2 of 6 trr Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.4 A, VDS = 10 V Note3 ID = 0.4 A, VGS = 10 V Note3 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.4 A VGS = 10 V RL = 750 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 0.7 A IF = 0.7 A, VGS = 0 Note3 IF = 0.7 A, VGS = 0 diF/dt = 100 A/µs HAT2179R Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 10 2.0 5.3 V PW = 100 µs 1 ID (A) ID (A) 10 µs 0.01 Operation in this area is limited by RDS(on) 0.001 0.0001 0.1 100 0 Drain to Source on State Resistance RDS(on) (Ω) 1.2 0.8 Tc = 75°C 25°C −25°C 0 4 6 10 8 Gate to Source Voltage ID = 1.4 A 0.7 A 4 0.4 A 2 25 20 VDS (V) 3 1 0.1 1 Drain Current 10 ID (A) Body-Drain Diode Reverse Recovery Time (Typical) 1000 8 0 16 VGS = 10 V Ta = 25°C Pulse Test VGS (V) VGS = 10 V Pulse Test 0 −25 12 10 Static Drain to Source on State Resistance vs. Temperature (Typical) 6 8 Drain to Source Voltage 50 75 Case Temperature 100 125 150 Tc (°C) REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 3 of 6 Reverse Recovery Time trr (ns) ID (A) 1.6 0.4 4 Static Drain to Source on State Resistance vs. Drain Current (Typical) VDS = 10 V Pulse Test Drain Current 0.4 VDS (V) 2.0 2 0.8 1000 Typical Transfer Characteristics 0 VGS = 5 V 0 10 1 Drain to Source Voltage 10 5.5 V 10 V Ta = 25°C Pulse Test Ta = 25°C 1 shot Static Drain to Source on State Resistance RDS(on) (Ω) 1.6 1.2 Drain Current Drain Current 0.1 6V 100 di / dt = 100 A / µs VGS = 0, Ta = 25°C 10 0.1 1 Reverse Drain Current IDR (A) 10 HAT2179R Typical Capacitance vs. Drain to Source Voltage 100 Coss 10 Crss 1 0 50 100 150 200 Drain to Source Voltage 250 300 Reverse Drain Current IDR (A) VGS = 0 V Ta = 25 °C Pulse Test 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD (V) REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 4 of 6 VGS 600 12 VDS VDS = 100 V 300 V 400 8 480 V 200 4 VDS = 480 V 300 V 100 V 0 0 4 8 Gate Charge VDS (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) 1.0 16 ID = 0.7 A Ta = 25°C 12 16 0 20 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5 VDS = 10 V 4 3 ID = 10 mA 1 mA 0.1 mA 2 1 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) VGS (V) Ciss 800 Gate to Source Voltage Ta = 25°C Gate to Source Cutoff Voltage VGS(off) (V) Capacitance C (pF) VGS = 0 f = 1 MHz Drain to Source Voltage 1000 VDS (V) Dynamic Input Characteristics (Typical) HAT2179R Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 D= PDM 0.001 1s 0.0001 10 µ t ho pu lse PW T PW T 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) Switching Time Test Circuit 90% Vout Monitor Vin Monitor 10 Ω Switching Time Waveform D.U.T. Vin Vout Vin 10 V 10% RL VDD = 300 V 10% 90% td(on) REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 5 of 6 10% tr 90% td(off) tf HAT2179R Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min A1 A L1 L y Detail F D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Ordering Information Part No. HAT2179R-EL-E Quantity 2500 pcs REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 6 of 6 Shipping Container Taping Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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