RJK5014DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1458-0200 Rev.2.00 Oct 20, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C REJ03G1458-0200 Rev.2.00 Oct 20, 2009 Page 1 of 6 Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 500 ±30 19 38 19 38 5 1.3 150 0.833 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C RJK5014DPK Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 500 — — 3.0 — Typ — — — — 0.315 Max — 1 ±0.1 4.5 0.380 Unit V μA μA V Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 1800 190 24 36 41 93 39 46 9 20 0.91 — — — — — — — — — — 1.55 pF pF pF ns ns ns ns nC nC nC V trr — 320 — ns Body-drain diode reverse recovery time Notes: 4. Pulse test REJ03G1458-0200 Rev.2.00 Oct 20, 2009 Page 2 of 6 Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 9.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 9.5 A VGS = 10 V RL = 26.3 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 19 A IF = 19 A, VGS = 0 Note4 IF = 19 A, VGS = 0 diF/dt = 100 A/μs RJK5014DPK Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 100 10 = 10 0 Ta = 25°C Pulse Test Drain Current ID (A) PW Drain Current ID (A) 40 10 μs μs 1 Operation in this area is limited by RDS(on) 0.1 0.01 1 10 100 5.6 V 5.4 V 10 5.2 V 0 4 8 12 16 Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) VDS = 10 V Pulse Test 5 Tc = −25°C 2 25°C 75°C 1 0.5 0.2 0 2 4 6 8 10 VGS = 10 V Ta = 25°C Pulse Test 1 0.1 10 1 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Body-Drain Diode Reverse Recovery Time (Typical) 100 1000 Reverse Recovery Time trr (ns) 1 0.8 20 Drain to Source Voltage VDS (V) Drain to Source on State Resistance RDS(on) (Ω) Drain Current ID (A) 20 Drain to Source Voltage VDS (V) 10 Static Drain to Source on State Resistance RDS(on) (Ω) 5.8 V 0 1000 20 0.1 6V 30 VGS = 5 V Ta = 25°C 1 shot 0.001 0.1 10 V VGS = 10 V ID = 8 A Pulse Test 0.6 0.4 0.2 0 -25 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 0 25 50 75 100 125 150 Case Temperature Tc (°C) REJ03G1458-0200 Rev.2.00 Oct 20, 2009 Page 3 of 6 1 10 Reverse Drain Current IDR (A) 100 RJK5014DPK Typical Capacitance vs. Drain to Source Voltage (Typical) 100 Coss Crss 10 1 0 VGS = 0 f = 1 MHz Ta = 25°C 50 100 150 200 Reverse Drain Current IDR (A) VGS VDD = 400 V 250 V 100 V 600 400 VDS 200 20 40 0 60 80 Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 20 10 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) REJ03G1458-0200 Rev.2.00 Oct 20, 2009 Page 4 of 6 12 4 VDD = 400 V 250 V 100 V Gate Charge Qg (nC) 30 16 8 Drain to Source Voltage VDS (V) VGS = 0 V Ta = 25 °C Pulse Test 0 ID = 19 A Ta = 25 °C 0 0 250 40 0 800 5 100 VDS = 10 V 4 3 ID = 10 mA 1 mA 0.1 mA 2 1 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Gate to Source Voltage VGS (V) 1000 Gate to Source Cutoff Voltage VGS(off) (V) Capacitance C (pF) Ciss Drain to Source Voltage VDS (V) 10000 Dynamic Input Characteristics (Typical) RJK5014DPK Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 0.833°C/W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 1 0.0 0.01 10 μ 1s t ho pu D= lse PW T PW T 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V VDD = 250 V Vin Vout 10% 10% 10% 90% td(on) REJ03G1458-0200 Rev.2.00 Oct 20, 2009 Page 5 of 6 tr 90% td(off) tf RJK5014DPK Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part No. RJK5014DPK-00-T0 Quantity 360 pcs REJ03G1458-0200 Rev.2.00 Oct 20, 2009 Page 6 of 6 Shipping Container Box (Tube) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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