2SK4093 Silicon N Channel MOS FET High Speed Power Switching REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Features • Capable of 2.5V gate drive • Low drive current • Low on-resistance Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D 1. Source 2. Drain 3. Gate G 32 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Ratings 250 Unit V VGSS ID Note1 ±10 1 V A Drain peak current Body-drain diode reverse drain current ID (pulse)Note2 IDR 2 0.5 A A Body-drain diode reverse drain peak current IDR (pulse)Note2 2 A Pch θch-a Tch Tstg 0.9 139 150 –55 to +150 W °C/W °C °C Gate to source voltage Drain current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 30% 2. PW ≤ 10 µs, duty cycle ≤ 1% REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 1 of 6 2SK4093 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) Static drain to source on state resistance RDS(on) Min 250 ±10 — — 0.5 — Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge RDS(on) — 2.0 2.7 Ω ID = 0.5 A, VGS = 2.5 V Note3 Ciss Coss Crss td(on) tr td(off) tf Qg — — — — — — — — 140 18 6 14 17 46 16 5.5 — — — — — — — — pF pF pF ns ns ns ns nC VDS = 25 V VGS = 0 f = 1 MHz Qgs Qgd VDF trr — — — — 0.4 3.1 0.78 80 — — 1.20 — nC nC V ns Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 2 of 6 Typ — — — — — 1.9 Max — — 1 ±10 1.5 2.6 Unit V V µA µA V Ω Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = 250 V, VGS = 0 VGS = ±8 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 4 V Note3 ID = 0.5 A VGS = 4 V RL = 250 Ω Rg = 10 Ω VDD = 200 V VGS = 4 V ID = 1 A IF = 0.5 A, VGS = 0 Note3 IF = 0.5 A, VGS = 0 diF/dt = 100 A/µs 2SK4093 Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 2.0 10 2V 4V 1 Drain Current ID (A) Drain Current ID (A) 10 µs PW = 100 µs 0.1 Operation in this area is limited by RDS(on) 0.01 0.001 1.6 8 V, 10 V 1.8 V 1.2 0.8 1.6 V 0.4 VGS = 1.4 V Ta = 25°C 1 shot 0.001 0.1 Pulse Test 1 4 16 20 Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) VDS = 10 V Pulse Test 0.2 0.1 0.05 0.02 0.01 Tc = 75°C 0.005 25°C −25°C 0.002 0.001 0 0.5 1.0 1.5 2.0 2.5 10 5 2 VGS = 2.5 V 4V 1 0.5 0.2 0.1 0.1 Pulse Test 0.2 VGS = 2.5 V Pulse Test 8 6 0.5 A ID = 1 A 4 0.25 A 2 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 3 of 6 Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature 0.5 1 2 Drain Current Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS(on) (Ω) 12 Drain to Source Voltage VDS (V) 0.5 10 8 Drain to Source Voltage VDS (V) 1 Drain Current ID (A) 0 1000 100 10 5 10 ID (A) Static Drain to Source on State Resistance vs. Temperature 10 VGS = 4 V Pulse Test 8 6 0.5 A 4 ID = 1 A 0.25 A 2 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) 2SK4093 Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 1000 500 300 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C 2 1 0.1 1 0 4 8 Gate Charge 12 16 0 20 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature Gate to Source Cutoff Voltage VGS(off) (V) 2.5 VDS = 10 V 2.0 1.5 1 mA 0.1 mA 1.0 ID = 10 mA 0.5 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 4 of 6 IDR (A) 4 VDD = 200 V 100 V 50 V Reverse Drain Current 100 8 VGS (V) 12 VDD = 200 V 100 V 50 V 100 150 VDS (V) 2.0 Gate to Source Voltage VDS (V) Drain to Source Voltage 16 VGS 200 50 Reverse Drain Current vs. Source to Drain Voltage ID = 1 A VDS VGS = 0 f = 1 MHz Drain to Source Voltage Dynamic Input Characteristics 300 Crss 3 IDR (A) 400 Coss 10 0.1 0 1 Reverse Drain Current 30 0.3 0.3 Ciss 100 Pulse Test 1.6 1.2 0.8 0.4 VGS = 4 V −4 V 0V 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) Normalized Transient Thermal Impedance γ s (t) 2SK4093 Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 θch – a (t) = γ s (t) • θch – a 0.1 0.1 θch – a = 139°C/W, Ta = 25°C 0.05 D= PDM 0.02 PW T 0.01 ulse ot p 1sh 0.01 10 µ PW T 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 4V Vin Vout 10% 10% 10% VDD = 125 V 90% td(on) REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 5 of 6 tr 90% td(off) tf 2SK4093 Package Dimensions Package Name TO-92 Mod JEITA Package Code SC-51 RENESAS Code PRSS0003DC-A Previous Code TO-92 Mod / TO-92 ModV 4.8 ± 0.4 MASS[Typ.] 0.35g Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part No. 2SK4093TZ-E Quantity 2500 pcs REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 6 of 6 Shipping Container Hold Box, Radial Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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