RENESAS 2SK4093

2SK4093
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1534-0300
Rev.3.00
Feb 01, 2008
Features
• Capable of 2.5V gate drive
• Low drive current
• Low on-resistance
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
1. Source
2. Drain
3. Gate
G
32
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Ratings
250
Unit
V
VGSS
ID Note1
±10
1
V
A
Drain peak current
Body-drain diode reverse drain current
ID (pulse)Note2
IDR
2
0.5
A
A
Body-drain diode reverse drain peak current
IDR (pulse)Note2
2
A
Pch
θch-a
Tch
Tstg
0.9
139
150
–55 to +150
W
°C/W
°C
°C
Gate to source voltage
Drain current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 30%
2. PW ≤ 10 µs, duty cycle ≤ 1%
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
Page 1 of 6
2SK4093
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Min
250
±10
—
—
0.5
—
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
RDS(on)
—
2.0
2.7
Ω
ID = 0.5 A, VGS = 2.5 V Note3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
—
—
—
—
—
—
—
—
140
18
6
14
17
46
16
5.5
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
VDS = 25 V
VGS = 0
f = 1 MHz
Qgs
Qgd
VDF
trr
—
—
—
—
0.4
3.1
0.78
80
—
—
1.20
—
nC
nC
V
ns
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 3. Pulse test
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
Page 2 of 6
Typ
—
—
—
—
—
1.9
Max
—
—
1
±10
1.5
2.6
Unit
V
V
µA
µA
V
Ω
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 250 V, VGS = 0
VGS = ±8 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 0.5 A, VGS = 4 V Note3
ID = 0.5 A
VGS = 4 V
RL = 250 Ω
Rg = 10 Ω
VDD = 200 V
VGS = 4 V
ID = 1 A
IF = 0.5 A, VGS = 0 Note3
IF = 0.5 A, VGS = 0
diF/dt = 100 A/µs
2SK4093
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
2.0
10
2V
4V
1
Drain Current ID (A)
Drain Current ID (A)
10 µs
PW = 100 µs
0.1
Operation in this
area is limited by
RDS(on)
0.01
0.001
1.6
8 V, 10 V
1.8 V
1.2
0.8
1.6 V
0.4
VGS = 1.4 V
Ta = 25°C
1 shot
0.001
0.1
Pulse Test
1
4
16
20
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS(on) (Ω)
VDS = 10 V
Pulse Test
0.2
0.1
0.05
0.02
0.01
Tc = 75°C
0.005
25°C
−25°C
0.002
0.001
0
0.5
1.0
1.5
2.0
2.5
10
5
2
VGS = 2.5 V
4V
1
0.5
0.2
0.1
0.1
Pulse Test
0.2
VGS = 2.5 V
Pulse Test
8
6
0.5 A
ID = 1 A
4
0.25 A
2
0
−25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
Page 3 of 6
Static Drain to Source on State Resistance
RDS(on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
0.5
1
2
Drain Current
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
RDS(on) (Ω)
12
Drain to Source Voltage VDS (V)
0.5
10
8
Drain to Source Voltage VDS (V)
1
Drain Current ID (A)
0
1000
100
10
5
10
ID (A)
Static Drain to Source on State Resistance
vs. Temperature
10
VGS = 4 V
Pulse Test
8
6
0.5 A
4
ID = 1 A
0.25 A
2
0
−25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
2SK4093
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
300
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
5
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
2
1
0.1
1
0
4
8
Gate Charge
12
16
0
20
Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage
VGS(off) (V)
2.5
VDS = 10 V
2.0
1.5
1 mA
0.1 mA
1.0
ID = 10 mA
0.5
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
Page 4 of 6
IDR (A)
4
VDD = 200 V
100 V
50 V
Reverse Drain Current
100
8
VGS (V)
12
VDD = 200 V
100 V
50 V
100
150
VDS (V)
2.0
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
16
VGS
200
50
Reverse Drain Current vs.
Source to Drain Voltage
ID = 1 A
VDS
VGS = 0
f = 1 MHz
Drain to Source Voltage
Dynamic Input Characteristics
300
Crss
3
IDR (A)
400
Coss
10
0.1
0
1
Reverse Drain Current
30
0.3
0.3
Ciss
100
Pulse Test
1.6
1.2
0.8
0.4 VGS = 4 V
−4 V
0V
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
2SK4093
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
θch – a (t) = γ s (t) • θch – a
0.1
0.1
θch – a = 139°C/W, Ta = 25°C
0.05
D=
PDM
0.02
PW
T
0.01
ulse
ot p
1sh
0.01
10 µ
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
4V
Vin
Vout
10%
10%
10%
VDD
= 125 V
90%
td(on)
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
Page 5 of 6
tr
90%
td(off)
tf
2SK4093
Package Dimensions
Package Name
TO-92 Mod
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Previous Code
TO-92 Mod / TO-92 ModV
4.8 ± 0.4
MASS[Typ.]
0.35g
Unit: mm
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55 Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5 Max
1.27
2.54
Ordering Information
Part No.
2SK4093TZ-E
Quantity
2500 pcs
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
Page 6 of 6
Shipping Container
Hold Box, Radial Taping
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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