HAT2184WP Silicon N Channel Power MOS FET Power Switching REJ03G0536-0500 Rev.5.00 Nov 27, 2006 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.5.00 Nov 27 2006 page 1 of 6 Symbol VDSS VGSS ID ID (pulse)Note1 IDR Ratings 150 ±30 14 28 14 Unit V V A A A IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg 28 14 14.7 25 5 150 –55 to +150 A A mJ W °C/W °C °C HAT2184WP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Rev.5.00 Nov 27 2006 page 2 of 6 Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 150 — — 3.0 6 — Typ — — — — 10 0.097 Max — 1 ±0.1 4.5 — 0.11 Unit V µA µA V S Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 710 160 13 26 31 53 7 15 4.3 5.6 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC VDF trr — — 0.85 95 1.4 — V ns Test conditions ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 7 A, VDS = 10 V Note4 ID = 7 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 7 A VGS = 10 V RL = 10.7 Ω Rg = 10 Ω VDD = 120 V VGS = 10 V ID = 14 A IF = 14 A, VGS = 0 Note4 IF = 14 A, VGS = 0 diF/dt = 100 A/µs HAT2184WP Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 Drain Current ID (A) 30 30 20 10 s DC (Tc Op = 2 era 5 ° tion C) 3 1 0.3 10 0 µ µs s PW = 10 ms (1shot) 0.1 0.03 Operation in this is limited by 0.01 area R DS(on) 0 20 Drain Current ID (A) 10 1m 10 0.003 16 50 100 150 Ta = 25°C 0.001 1 200 3 100 30 10 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 10 V 7V VDS = 10 V Pulse Test Pulse Test 8V 6.5 V 12 5.9 V 8 VGS = 5.4 V 4 Drain Current ID (A) Channel Dissipation Pch (W) 40 16 12 Tc = 75°C 8 25°C 4 −25°C 2 4 6 8 0 10 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 8 Pulse Test 6 4 ID = 28 A 2 0 14 A 4 8 12 16 7A 20 Gate to Source Voltage VGS (V) Rev.5.00 Nov 27 2006 page 3 of 6 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) 0 1 VGS = 10 V 0.5 0.2 0.1 0.05 0.02 Pulse Test 0.01 1 3 10 30 100 300 Drain Current ID (A) 1000 Pulse Test 0.4 ID = 28 A 0.3 14 A 0.2 7A 0.1 0 −25 0 25 50 75 100 125 150 30 Tc = −25°C 10 25°C 75°C 3 1 0.3 0.1 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics VGS = 0 f = 1 MHz 3000 1000 Ciss 300 100 Coss 30 10 Crss 3 1 0 50 100 100 240 16 ID = 14 A VGS VDD = 30 V 60 V 120 V 180 12 VDS 120 8 60 4 VDD = 120 V 60 V 30 V 0 150 4 8 12 0 20 16 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Switching Characteristics Reverse Drain Current vs. Source to Drain Voltage 20 tf VGS = 10 V, VDD = 75 V PW = 5 µs, duty ≤ 1 % RG = 10 Ω 100 Reverse Drain Current IDR (A) 1000 Switching Time t (ns) 100 tr td(off) td(on) tf 10 tr 1 0.1 0.3 1 3 Drain Current Rev.5.00 Nov 27 2006 page 4 of 6 10 30 ID (A) 100 16 12 8 4 10 V 5V VGS = 0, −5 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Gate to Source Voltage VGS (V) VGS = 10 V Forward Transfer Admittance |yfs| (S) 0.5 10000 Capacitance C (pF) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance RDS(on) (Ω) HAT2184WP HAT2184WP Gate to Source Cutoff Voltage vs. Case Temperature 5 Gate to Source Cutoff Voltage VGS(off) (V) VDS = 10 V ID = 10 mA 4 1 mA 3 0.1 mA 2 1 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch - c(t) = γs (t) • θ ch - c θ ch - c = 5°C/ W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 1 0.0 D= e uls PW p ot T h 0.01 10 µ 1s PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout 10 Ω Vin 10 V VDD = 75V 10% 90% td(on) Rev.5.00 Nov 27 2006 page 5 of 6 10% tr 90% td(off) tf HAT2184WP Package Dimensions JEITA Package Code − RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g 0.8Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK 4.21Typ 1.27Typ +0.1 -0.2 5.9 3.8 ± 0.2 +0.1 -0.3 6.1 3.9 ± 0.2 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.635Max 0.7Typ 0.04Min 0.4 ± 0.06 4.9 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part Name HAT2184WP-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Nov 27 2006 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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