HF15-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF15-28F is Designed for FEATURES: B .112 x 45° A E • PG = 21 dB min. at 15 W/30 MHz • IMD3 = -30 dBc max. at 15 W (PEP) • Omnigold™ Metalization System C Ø.125 NOM. FULL R J .125 E B C D E F MAXIMUM RATINGS G IC 4.0 A VCBO 65 V VCEO 35 V VEBO PDISS 4.0 V 40 W @ TC = 25 C -65 OC to +200 OC TJ O -65 C to +150 C θ JC 4.4 OC/W CHARACTERISTICS SYMBOL MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 MAXIMUM .385 / 9.78 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I O T STG DIM E O H I .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10602 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 200 mA 35 V BV CES IC = 200 mA 65 V BV EBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V f = 1.0 MHz GP VCE = 28 V f = 150 MHz fT VCE = 10 V IC = 200 mA IC = 200 mA 5.0 f = 100 MHz 10 250 2.0 mA --- --- 50 pF --- dB MHz A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change witout notice.