HFA60EA120P Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 60 A FEATURES 3 • Fast recovery time characteristic 1 • Electrically isolated base plate • Antiparallel diodes • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly 2 SOT-227 4 • UL pending • Totally lead (Pb)-free • Designed and qualified for industrial level DESCRIPTION/APPLICATIONS PRODUCT SUMMARY VR This SOT-227 modules with HEXFRED® rectifier are in antiparallel configuration. The antiparallel configuration is used for simple series rectifier and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. 1200 V VF (typical) 2.2 V trr (typical) 145 ns IF(DC) at TC 30 A at 120 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR MAX. UNITS 1200 V Continuous forward current IF TC = 120 °C 30 Single pulse forward current IFSM TJ = 25 °C 350 Maximum repetitive forward current IFRM Rated VR, square wave, 20 kHz, TC = 60 °C 130 TC = 25 °C 312 TC = 100 °C 125 Any terminal to case, t = 1 minute 2500 V - 55 to + 150 °C Maximum power dissipation PD RMS isolation voltage VISOL Operating junction and storage temperature range TJ, TStg A W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Forward voltage VFM Reverse leakage current Document Number: 94610 Revision: 17-Oct-08 IRM TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 30 A - 2.2 3.0 IF = 60 A - 2.7 3.8 IF = 60 A, TJ = 150 °C - 2.1 - IR = 100 µA UNITS V VR = VR rated - 2.0 75 µA TJ = 150 °C, VR = VR rated - 2.7 10 mA For technical questions, contact: [email protected] www.vishay.com 1 HFA60EA120P Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 60 A DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr TEST CONDITIONS MIN. TYP. MAX. TJ = 25 °C - 145 - TJ = 125 °C - 218 - - 13 - - 19 - IF = 50 A TJ = 25 °C dIF/dt = - 200 A/µs TJ = 125 °C VR = 200 V TJ = 25 °C - 910 - TJ = 125 °C - 1920 - MIN. TYP. MAX. - - 0.4 - - 0.2 - 0.05 - UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both legs conducting Case to heatsink SYMBOL TEST CONDITIONS RthJC RthCS Flat, greased and surface UNITS °C/W Weight - 30 - g Mounting torque - 1.3 - Nm www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94610 Revision: 17-Oct-08 HFA60EA120P HEXFRED® Ultrafast Soft Recovery Diode, 60 A 10 150°C Reverse Current - IR (mA) Instantaneous Forward Current - IF (A) 1000 Vishay High Power Products 100 10 Tj = 150°C Tj = 125°C Tj = 25°C 1 125°C 0.1 0.01 25°C 0.001 0.0001 1 200 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 400 600 800 1000 1200 Forward Voltage Drop - VFM (V) Reverse Voltage - VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 1 D = 0.75 D = 0.5 0.1 D = 0.33 D = 0.25 D = 0.2 0.01 Single Pulse (Thermal Resistance) 0.001 0.0001 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics 300 140 120 100 DC 80 60 Square wave (D=0.50) 80% rated Vr applied 40 20 Average Power Loss - (Watts) Allowable Case Temperature (°C) 160 180° 120° 90° 60° 30° 250 200 DC RMS Limit 150 100 50 see note (1) 0 0 0 20 40 60 80 100 Average Forward Current - IF(AV) (A) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Document Number: 94610 Revision: 17-Oct-08 0 20 40 60 80 100 Average Forward Current - IF(AV) (A) Fig. 5 - Forward Power Loss Characteristics For technical questions, contact: [email protected] www.vishay.com 3 HFA60EA120P HEXFRED® Ultrafast Soft Recovery Diode, 60 A Vishay High Power Products 3000 300 Vr = 200V Vr = 200V 2500 250 If = 50A, Tj = 125°C 2000 200 Q rr (nC) t rr (ns) If = 50A, Tj = 125°C If = 50A, Tj = 25°C 150 1500 If = 50A, Tj = 25°C 1000 100 500 50 100 0 100 1000 dIF /dt (A/μs) 1000 dIF /dt (A/μs) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 40 Vr = 200V 30 I rr (A) If = 50A, Tj = 125°C 20 If = 50A, Tj = 25°C 10 0 100 1000 dIF /dt (A/μs) Fig. 8 - Typical Peak Recovery Current vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94610 Revision: 17-Oct-08 HFA60EA120P HEXFRED® Ultrafast Soft Recovery Diode, 60 A Vishay High Power Products VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94610 Revision: 17-Oct-08 For technical questions, contact: [email protected] www.vishay.com 5 HFA60EA120P HEXFRED® Ultrafast Soft Recovery Diode, 60 A Vishay High Power Products ORDERING INFORMATION TABLE Device code HF A 60 EA 120 P 1 2 3 4 5 6 1 - HEXFRED® family 2 - Process designator (A = Electron irradiated) 3 - Average current (60 = 60 A) 4 - Package outline (EA = SOT-227, 2 diodes antiparallel) 5 - Voltage rating (120 = 1200 V) 6 - P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95036 Packaging information http://www.vishay.com/doc?95037 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94610 Revision: 17-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1