Bulletin PD-20395 rev. A 01/02 HFA80FA120 HEXFREDTM Ultrafast, Soft Recovery Diode Features • • • • VR = 1200V VF(typ) = 2.6V IF(AV) = 80A trr (typ) = 25ns Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly Description/ Applications The dual diode series configuration (HFA80FA120) is used for output rectification or frewheeling/ clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. Absolute Maximum Ratings Parameters Max Units VR Cathode-to-Anode Voltage 1200 V IF Continuous Forward Current, TC = 60°C Per Leg 40 A IFSM Single Pulse Forward Current, TJ = 25°C Per Leg 400 IFRM Maximum Repetitive Forward Current, Rated VR, 72 Square wave, 20KHz, TC = 60°C PD Max Power Dissipation, TC = 100°C 71 Max Power Dissipation, TC = 25°C 178 VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min TJ, TSTG Operating Junction and Storage Temperatures W 2500 V - 55 to 150 °C Case Styles HFA80FA120 K2 A2 K1 A1 SOT-227 www.irf.com 1 HFA80FA120 Bulletin PD-20395 rev. A 01/02 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VBR Cathode Anode Breakdown Voltage 1200 - - V I R = 100µA VFM Forward Voltage - 2.6 3.0 V I F = 25A - 2.9 3.3 V I F = 40A - 3.4 - V I F = 80A, T J = 125°C V R = VR Rated Fig. 1 IRM Reverse Leakage Current - 2.0 - µA Fig. 2 - 0.5 2 mA T J = 125°C, VR = 0.8 x VR Rated CT Junction Capacitance - 43 - pF V R = 200V Fig. 3 Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified) Parameters trr IRRM Qrr Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Min Typ Max Units Test Conditions - 25 - - 52 - TJ = 25°C - 110 - TJ = 125°C - 5.9 - - 10.8 - - 160 - - 630 - ns A I F = 1A, diF/dt = 200A/µs, VR = 30V T J = 25°C TJ = 125°C nC IF = 40A diF /dt = - 200A/µs VR = 200V T J = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameters RthJC 2 Max Units Junction to Case, Single Leg Conducting Min Typ 0.7 °C/W Both Leg Conducting 0.35 K/W RthCS Case to Heat Sink, Flat, Greased Surface Wt Weight 0.05 30 g T Mounting Torque 1.3 (N*m) www.irf.com HFA80FA120 Bulletin PD-20395 rev. A 01/02 10 100 Reverse Current - I R (µA) 1 125˚C 0.1 0.01 25˚C 0.001 0.0001 0 200 400 600 800 1000 1200 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 10 1000 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) Tj = 150˚C Tj = 150˚C Tj = 125˚C Tj = 25˚C Tj = 25˚C 100 10 1 1 1.5 2 2.5 3 3.5 1 4 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 10 100 1000 10000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) 1 0.1 0.01 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 0.001 Single Pulse (Thermal Resistance) 0.0001 0.00001 Notes: 1. Duty factor D = t1/ t2 . 2. Peak Tj = Pdm x ZthJC + Tc 0.0001 0.001 0.01 0.1 1 . 10 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics www.irf.com 3 HFA80FA120 160 200 140 180 Average Power Loss ( Watts ) Allowable Case Temperature (°C) Bulletin PD-20395 rev. A 01/02 120 100 DC 80 60 40 Square wave 20 (D = 0.50) 0 0 10 20 30 40 50 60 140 100 60 40 20 0 10 20 30 40 50 60 Average Forward Current - I F(AV) (A) Fig. 6 - Forward Power Loss Characteristics 1800 140 1600 If = 40A, Tj = 125˚C If = 20A, Tj = 125˚C 1400 If = 40A, Tj = 125˚C If = 20A, Tj = 125˚C 1200 Qrr ( nC ) 100 trr ( ns ) D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 80 0 70 Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current 80 60 DC 120 Average Forward Current - I F(AV) (A) 120 RMS Limit 160 If = 40A, Tj = 25˚C If = 20A, Tj = 25˚C 1000 800 600 If = 40A, Tj = 25˚C If = 20A, Tj = 25˚C 400 40 200 20 100 1000 di F /dt (A/µs ) Fig. 7 - Typical Reverse Recovery vs. di F /dt 0 100 1000 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR 4 www.irf.com HFA80FA120 Bulletin PD-20395 rev. A 01/02 3 t rr IF VR = 200V tb ta 0 2 0.01 Ω Q rr I RRM di(rec)M/dt L = 70µH 5 0.75 I RRM D.U.T. dif/dt ADJUST 4 0.5 I RRM 1 di f /dt D IRFP250 G 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current S Fig. 9 - Reverse Recovery Parameter Test Circuit 4. Qrr - Area under curve defined by t rr and IRRM Q rr = t rr x I RRM 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions SOT-227 Package Details 38.30 ( 1.508 ) 37.80 ( 1.488 ) 4.40 (.173 ) 4.20 (.165 ) CHAMFER 2.00 ( .079 ) X 457 -A4 LEAD ASSIGMENTS E C S 4 1 3 6.25 ( .246 ) 12.50 ( .492 ) 1 25.70 ( 1.012 ) 25.20 ( .992 ) E G IGBT -B- A1 K2 R FULL 7.50 ( .295 ) 15.00 ( .590 ) S 2 K1 A2 HEXFRED 3 K22 A2 A1 K2 G 4HEXFET 1 3 4 1 2 D LEAD ASSIGNMENTS 3 2 K1 A2 K1 A1 HEXFRED 30.20 ( 1.189 ) 29.80 ( 1.173 ) 4X 2.10 ( .082 ) 1.90 ( .075 ) 8.10 ( .319 ) 7.70 ( .303 ) 0.25 ( .010 ) M C A M B M 2.10 ( .082 ) 1.90 ( .075 ) 12.30 ( .484 ) 11.80 ( .464 ) -C0.12 ( .005 ) www.irf.com 5 HFA80FA120 Bulletin PD-20395 rev. A 01/02 SOT-227 Package Details Tube QUANTITIES PER TUBE IS 10 M4 SCREW AND WASHER INCLUDED Ordering Information Table Device Code HF A 80 FA 120 1 2 3 4 5 1 - Hexfred Family 2 - Process Designator (A = Electron Irradiated) 3 - Average Current (80 = 80A) 4 - Package Outline (FA = SOT-227) 5 - Voltage Rating (120 = 1200V) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/02 6 www.irf.com