HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 40A, 600V at TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC • Short Circuit Rated • Low Conduction Loss Packaging JEDEC TO-263AB Formerly developmental type TA49050. Ordering Information PART NUMBER PACKAGE G BRAND HGTP20N60B3 TO-220AB G20N60B3 HGT1S20N60B3S TO-263AB G20N60B3 HGTG20N60B3 TO-247 HG20N60B3 E COLLECTOR (FLANGE) JEDEC TO-220AB (ALTERNATE VERSION) E C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A. Symbol G COLLECTOR (FLANGE) C G JEDEC STYLE TO-247 E C E G COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC HGT1S20N60B3S HGTP20N60B3 HGTG20N60B3 UNITS 600 600 V V 40 20 160 ±20 ±30 30A at 600V 165 1.32 -40 to 150 A A A V V W W/oC oC 300 260 oC oC 4 10 µs µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE = 360V, TC = 125oC, RG = 25Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Collector to Emitter Breakdown Voltage BVCES Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES Switching SOA SSOA Gate to Emitter Plateau Voltage VGEP On-State Gate Charge QG(ON) Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Thermal Resistance RθJC TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE VGE = ±20V MIN TYP MAX UNITS 600 - - V - - 250 µA - - 1.0 mA - 1.8 2.0 V - 2.1 2.5 V 3.0 5.0 6.0 V - - ±100 nA VCE = 480V 100 - - A VCE = 600V 30 - - A IC = IC110, VCE = 0.5 BVCES - 8.0 - V IC = IC110 , VCE = 0.5 BVCES VGE = 15V - 80 105 nC VGE = 20V - 105 135 nC TC = 150oC, VGE = 15V, RG = 10Ω, L = 45µH TC = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 100µH - 25 - ns - 20 - ns - 220 275 ns - 140 175 ns - 475 - µJ - 1050 - µJ 0.76 oC/W - - NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total TurnOff Energy Loss. Turn-On losses include diode losses. 2 HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VCE = 10V 80 TC = 150oC 60 TC = 25oC 40 TC = -40oC 20 0 4 6 8 10 100 VGE = 9V 60 VGE = 8.5V 40 VGE = 8.0V 20 VGE = 7.5V VGE = 7.0V 0 12 0 2 VGE = 15V 30 20 10 0 125 150 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 40 100 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 15V CIES C, CAPACITANCE (pF) 4000 3000 2000 COES 1000 CRES 0 20 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 3 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz 15 TC = 25oC 80 60 TC = -40oC 40 TC = 150oC 20 0 0 1 2 3 4 5 FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE 5000 10 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE 5 8 100 TC , CASE TEMPERATURE (oC) 0 6 FIGURE 2. SATURATION CHARACTERISTICS 50 75 4 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS 50 VGE = 10V PULSE DURATION = 250µs DUTY CYCLE <0.5% TC = 25oC 80 VGE, GATE TO EMITTER VOLTAGE (V) 25 12V VGE = 15V 600 15 480 12 Ig(REF) = 1.685mA VCE = 600V RL = 30Ω 360 9 VCE = 400V 240 6 VCE = 200V 120 3 TC = 25oC 0 0 20 40 60 80 QG , GATE CHARGE (nC) FIGURE 6. GATE CHARGE WAVEFORMS 100 0 VGE , GATE TO EMITTER VOLTAGE (V) 100 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Typical Performance Curves 500 TJ = 150oC, RG = 10Ω, L = 100µH td(OFF)I , TURN-OFF DELAY TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) 100 (Continued) 50 40 VCE = 480V, VGE = 15V 30 20 10 20 30 VCE = 480V, VGE = 15V 300 200 10 0 TJ = 150oC, RG = 10Ω, L = 100µH 400 100 40 0 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 1000 TJ = 150oC, RG = 10Ω, L = 100µH 30 40 TJ = 150oC, RG = 10Ω, L = 100µH VCE = 480V, VGE = 15V VCE = 480V, VGE = 15V 10 1 100 10 0 10 20 30 40 0 ICE , COLLECTOR TO EMITTER CURRENT (A) 1400 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 2500 TJ = 150oC, RG = 10Ω, L = 100µH EOFF, TURN-OFF ENERGY LOSS (µJ) EON , TURN-ON ENERGY LOSS (µJ) 20 FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT tfI , FALL TIME (ns) trI , TURN-ON RISE TIME (ns) 100 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 1200 1000 VCE = 480V, VGE = 15V 800 600 400 200 TJ = 150oC, RG = 10Ω, L = 100µH 2000 VCE = 480V, VGE = 15V 1500 1000 500 0 0 0 10 20 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 40 0 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Typical Performance Curves ICE , COLLECTOR TO EMITTER CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) 500 (Continued) TJ = 150oC, TC = 75oC, VGE = 15V RG = 10Ω, L = 100µH VCE = 480V 100 fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC 10 = 0.76oC/W 5 10 20 30 40 120 TC = 150oC, VGE = 15V, RG = 10Ω 100 80 60 40 20 0 0 ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 100 100 200 300 400 500 600 VCE , COLLECTOR TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 14. SWITCHING SAFE OPERATING AREA 0.5 0.2 10-1 0.1 0.05 0.02 10-2 0.01 t1 SINGLE PULSE PD DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-3 10-5 10-4 10-3 10-2 t2 10-1 101 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveform 90% L = 100µH 10% VGE RHRP3060 EOFF EON VCE RG = 10Ω 90% + - VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT 5 FIGURE 17. SWITCHING TEST WAVEFORMS 700 HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 17. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 17. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 6 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.