INTERSIL HGTP12N60C3

HGTP12N60C3, HGT1S12N60C3S
Data Sheet
January 2000
24A, 600V, UFS Series N-Channel IGBTs
Features
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
• 24A, 600V at TC = 25oC
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Packaging
Formerly Developmental Type TA49123.
File Number
4040.4
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60C3
TO-220AB
P12N60C3
HGT1S12N60C3S
TO-263AB
S12N60C3
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A.
Symbol
GATE
EMITTER
C
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
HGTP12N60C3, HGT1S12N60C3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTP12N60C3, HGT1S12N60C3S
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
600
V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
24
12
96
±20
±30
24A at 600V
104
0.83
100
-40 to 150
260
4
13
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter-Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
24
30
-
V
Collector to Emitter Leakage Current
ICES
-
-
250
µA
VCE = BVCES
TC = 25oC
VCE = BVCES
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
VCE(PK) = 480V
VCE(PK) = 600V
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = IC110,
VGE = 15V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250µA,
VCE = VGE
Gate to Emitter Leakage Current
IGES
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC
RG = 25Ω
VGE = 15V
L = 100µH
-
-
1.0
mA
-
1.65
2.0
V
-
1.85
2.2
V
3.0
5.0
6.0
V
-
-
±100
nA
80
-
-
A
24
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
7.6
-
V
On-State Gate Charge
QG(ON)
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
48
55
nC
VGE = 20V
-
62
71
nC
Current Turn-On Delay Time
td(ON)I
TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 25Ω,
L = 100µH
-
14
-
ns
Gate to Emitter Plateau Voltage
VGEP
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
-
16
-
ns
-
270
400
ns
-
210
275
ns
µJ
Turn-On Energy
EON
-
380
-
Turn-Off Energy (Note 3)
EOFF
-
900
-
µJ
Thermal Resistance
RθJC
-
-
1.2
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTP12N60C3 and HGT1S12N60C3S were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
2
HGTP12N60C3, HGT1S12N60C3S
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
70
60
50
TC = 150oC
40
TC = 25oC
30
TC = -40oC
20
10
0
4
6
8
10
12
14
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
80
VGE = 15.0V
70
12.0V
60
50
10.0V
40
30
9.0V
20
8.5V
8.0V
10
7.0V
0
0
2
4
6
8
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VGE , GATE TO EMITTER VOLTAGE (V)
80
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
60
50
40
TC = -40oC
30
TC = 150oC
20
TC = 25oC
10
0
0
1
2
3
4
5
80
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
70
60
40
TC = 150oC
30
20
10
0
0
20
15
10
5
0
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 5. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
3
2
3
4
5
150
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
ICE , DC COLLECTOR CURRENT (A)
VGE = 15V
50
1
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
25
TC = 25oC
TC = -40oC
50
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
25
10
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 1. TRANSFER CHARACTERISTICS
70
7.5V
140
20
VCE = 360V, RG = 25Ω, TJ = 125oC
120
100
15
ISC
80
60
10
40
tSC
5
10
11
12
13
14
20
15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
ISC, PEAK SHORT CIRCUIT CURRENT (A)
80
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
HGTP12N60C3, HGT1S12N60C3S
Typical Performance Curves
400
100
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
td(OFF)I , TURN-OFF DELAY TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)
(Continued)
50
VGE = 10V
30
20
VGE = 15V
10
TJ = 150oC, RG = 25Ω, L = 100mH, VCE(PK) = 480V
300
VGE = 15V
VGE = 10V
200
100
5
10
15
20
25
30
5
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
15
20
25
30
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
200
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
TJ = 150oC, RG = 25Ω, L = 100mH, VCE(PK) = 480V
100
VGE = 10V
tfI , FALL TIME (ns)
trI , TURN-ON RISE TIME (ns)
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
VGE = 15V
10
200
VGE = 10V or 15V
100
90
80
5
5
10
15
20
25
5
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
15
20
25
30
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
3.0
2.0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
EOFF, TURN-OFF ENERGY LOSS (mJ)
EON , TURN-ON ENERGY LOSS (mJ)
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
1.5
VGE = 10V
1.0
VGE = 15V
0.5
0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
2.5
2.0
1.5
VGE = 10V or 15V
1.0
0.5
0
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
30
5
10
15
20
25
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTP12N60C3, HGT1S12N60C3S
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
100
VGE = 10V
VGE = 15V
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
10
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
1
5
10
20
100
TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
80
60
LIMITED BY
CIRCUIT
40
20
0
0
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
CIES
C, CAPACITANCE (pF)
1500
1000
500
COES
CRES
0
0
5
10
15
20
300
400
500
600
25
IG(REF) = 1.276mA, RL = 50Ω, TC = 25oC
600
480
360
9
240
6
VCE = 400V
VCE = 200V
120
3
0
0
0
10
20
30
40
50
60
QG , GATE CHARGE (nC)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
t1
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
PD
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
15
12
VCE = 600V
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
ZθJC , NORMALIZED THERMAL RESPONSE
200
FIGURE 14. SWITCHING SAFE OPERATING AREA
2500
2000
100
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
t2
101
VGE, GATE TO EMITTER VOLTAGE (V)
fMAX , OPERATING FREQUENCY (kHz)
200
(Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
HGTP12N60C3, HGT1S12N60C3S
Test Circuit and Waveform
90%
L = 100µH
10%
VGE
RHRP1560
EOFF
EON
VCE
RG = 25Ω
90%
+
-
VDD = 480V
ICE
10%
td(OFF)I
trI
tfI
td(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions are taken:
Operating frequency information for a typical device
Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows fMAX1 or fMAX2 whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on- state time for a 50% duty factor. Other definitions
are possible. tD(OFF)I and tD(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. tD(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 13) and the
conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 19. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e. the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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6
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