HGTP5N120BN, HGT1S5N120BNS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs Features The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. • 21A, 1200V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • Avalanche Rated Formerly Developmental Type TA49308. Ordering Information PART NUMBER File Number 4599.2 • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging PACKAGE BRAND HGTP5N120BN TO-220AB 5N120BN HGT1S5N120BNS TO-263AB 5N120BN JEDEC TO-220AB (ALTERNATE VERSION) COLLECTOR (FLANGE) E NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S5N120BNS9A. C G Symbol C JEDEC TO-263AB G COLLECTOR (FLANGE) E G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. SABER™ is a trademark of Analogy, Inc. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTP5N120BN, HGT1S5N120BNS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC HGTP5N120BN, HGT1S5N120BNS UNITS 1200 V 21 10 40 ±20 ±30 30A at 1200V 167 1.33 36 -55 to 150 A A A V V W W/oC mJ oC 300 260 oC 8 15 µs µs oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 12A, L = 500µH. 3. VCE(PK) = 840V, TJ = 125oC, RG = 25Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V TC = 25oC - - 250 µA TC = 125oC - 100 - µA TC = 150oC - - 1.5 mA TC = 25oC - 2.45 2.7 V TC = 150oC - 3.7 4.2 V 6.0 6.8 - V - - ±250 nA 30 - - A Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage ICES VCE(SAT) VGE(TH) VCE = BVCES IC = 5A, VGE = 15V IC = 45µA, VCE = VGE IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V, L = 5mH, VCE(PK) = 1200V Gate to Emitter Plateau Voltage VGEP IC = 5A, VCE = 0.5 BVCES - 10.5 - V IC = 5A, VCE = 0.5 BVCES VGE = 15V - 53 65 nC VGE = 20V - 60 72 nC Gate to Emitter Leakage Current On-State Gate Charge QG(ON) 2 HGTP5N120BN, HGT1S5N120BNS TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS MIN TYP MAX UNITS IGBT and Diode at TJ = 25oC, ICE = 5A, VCE = 0.8 BVCES , VGE = 15V, RG = 25Ω, - 22 25 ns - 15 20 ns - 160 180 ns L = 5mH, Test Circuit (Figure 18) - 130 160 ns Turn-On Energy (Note 4) EON1 - 220 - µJ Turn-On Energy (Note 4) EON2 - 450 600 µJ Turn-Off Energy (Note 5) EOFF - 390 450 µJ Current Turn-On Delay Time td(ON)I - 20 25 ns - 15 20 ns - 182 280 ns - 175 200 ns Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI IGBT and Diode at TJ = 150oC, ICE = 5A, VCE = 0.8 BVCES , VGE = 15V, RG = 25Ω, L = 5mH, Test Circuit (Figure 18) Turn-On Energy (Note 4) EON1 - 220 - µJ Turn-On Energy (Note 4) EON2 - 1000 1300 µJ Turn-Off Energy (Note 5) EOFF - 560 800 µJ 0.75 oC/W Thermal Resistance Junction To Case RθJC - - NOTES: 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 25 VGE = 15V 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 3 150 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 35 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 5mH 30 25 20 15 10 5 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTP5N120BN, HGT1S5N120BNS Unless Otherwise Specified (Continued) TJ = 150oC, RG = 25Ω, L = 5mH, V CE = 960V 200 TC = 75oC, VGE = 15V IDEAL DIODE 100 TC VGE 75oC 15V 75oC 12V 50 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION TC (DUTY FACTOR = 50%) 110oC 110oC RØJC = 0.75oC/W, SEE NOTES 10 2 4 VGE 15V 12V 6 8 80 40 VCE = 840V, RG = 25Ω, TJ = 125oC 35 70 ISC 30 60 25 50 20 40 tSC 15 10 10 30 10 11 30 DUTY CYCLE <0.5%, VGE = 12V PULSE DURATION = 250µs 25 TC = -55oC 20 TC = 25oC TC = 150oC 10 5 0 2 4 6 8 10 15 20 25 TC = 25oC TC = -55oC TC = 150oC 20 15 10 5 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 0 0 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 900 3000 RG = 25Ω, L = 5mH, VCE = 960V EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) 14 30 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 2500 TJ = 150oC, VGE = 12V, VGE = 15V 2000 1500 1000 500 TJ = 25oC, VGE = 12V, VGE = 15V 0 13 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 0 12 VGE , GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) 15 ISC, PEAK SHORT CIRCUIT CURRENT (A) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) Typical Performance Curves 2 3 4 5 6 7 8 9 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 10 RG = 25Ω, L = 5mH, VCE = 960V 800 700 TJ = 150oC, VGE = 12V OR 15V 600 500 400 TJ = 25oC, VGE = 12V OR 15V 300 200 2 3 4 5 6 7 8 9 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTP5N120BN, HGT1S5N120BNS Typical Performance Curves Unless Otherwise Specified (Continued) 40 40 RG = 25Ω, L = 5mH, VCE = 960V 35 35 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 25Ω, L = 5mH, VCE = 960V 30 TJ = 25oC, TJ = 150oC, VGE = 12V 25 30 TJ = 25oC, TJ = 150oC, VGE = 12V 25 20 15 20 10 TJ = 25oC, TJ = 150oC, VGE = 15V 15 2 3 4 5 6 7 8 9 TJ = 25oC, TJ = 150oC, VGE = 15V 0 10 2 ICE , COLLECTOR TO EMITTER CURRENT (A) 3 4 5 6 7 8 9 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 250 RG = 25Ω, L = 5mH, VCE = 960V RG = 25Ω, L = 5mH, VCE = 960V 225 200 VGE = 12V, VGE = 15V, TJ = 150oC tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 250 200 175 150 TJ = 150oC, VGE = 12V OR 15V 150 100 125 100 TJ = 25oC, VGE = 12V OR 15V VGE = 12V, VGE = 15V, TJ = 25oC 2 3 4 5 6 7 8 9 50 10 2 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) 16 DUTY CYCLE <0.5%, VCE = 20V PULSE DURATION = 250µs 60 50 TC = 25oC 30 20 TC = -55oC TC = 150oC 10 0 7 8 9 10 11 12 13 14 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTICS 5 5 6 7 8 9 10 FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 80 40 4 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 70 3 15 IG(REF) = 1mA, RL = 120Ω, TC = 25oC 14 VCE = 1200V 12 10 8 VCE = 800V VCE = 400V 6 4 2 0 0 10 20 30 40 50 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 60 HGTP5N120BN, HGT1S5N120BNS Unless Otherwise Specified (Continued) 2.0 C, CAPACITANCE (nF) FREQUENCY = 1MHz 1.5 CIES 1.0 0.5 COES 0 CRES 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 10 DUTY CYCLE <0.5%, TC = 110oC PULSE DURATION = 250µs 8 6 VGE = 15V 2 0 0 0.5 1.5 1.0 2.0 2.5 3.0 3.5 4.0 4.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE VGE = 10V 4 FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 PD t2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms RHRD6120 90% 10% VGE EON2 EOFF L = 5mH VCE RG = 25Ω 90% + - ICE VDD = 960V FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT 6 10% td(OFF)I tfI trI td(ON)I FIGURE 19. SWITCHING TEST WAVEFORMS HGTP5N120BN, HGT1S5N120BNS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.