HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. The IGBT used is TA49192. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. File Number 4414.1 Features • 7A, 600V TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode • Related Literature • TB334 “Guidelines for Soldering Surface Mount - Components to PC Boards Packaging JEDEC TO-220AB Formerly Developmental Type TA49193. E Ordering Information PART NUMBER PACKAGE COLLECTOR (FLANGE) BRAND HGTP3N60B3D TO-220AB G3N60B3D HGT1S3N60B3DS TO-263AB G3N60B3D C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S3N60B3DS9A. Symbol TO-263, TO-263AB C COLLECTOR (FLANGE) G G E E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTP3N60B3D, HGT1S3N60B3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP3N60B3D, HGT1S3N60B3DS UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110 7.0 A 3.5 A Average Diode Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC(AVG) 4.0 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 20 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 33.3 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 5 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage BVCES ICES VCE(SAT) VGE(TH) TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V MIN TYP MAX UNITS 600 - - V TC = 25oC - - 250 µA TC = 150oC - - 2.0 mA TC = 25oC - 1.8 2.1 V TC = 150oC - 2.1 2.5 V 4.5 5.4 6.0 V - - ±250 nA 18 - - A IC = 250µA, VCE = VGE IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 82Ω, VGE = 15V L = 500µH, VCE = 600V Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 7.9 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 18 22 nC VGE = 20V - 21 25 nC - 18 - ns - 16 - ns - 105 - ns - 70 - ns - 66 75 µJ - 88 160 µJ Gate to Emitter Leakage Current On-State Gate Charge Qg(ON) Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 1) EOFF 2 IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH Test Circuit (Figure 19) HGTP3N60B3D, HGT1S3N60B3DS TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 1) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS - 16 - ns - 18 - ns - 220 295 ns - 115 175 ns - 130 140 µJ - 210 325 µJ IEC = 3A - 2.0 2.5 V IEC = 1A, dIEC/dt = 200A/µs - - 22 ns IEC = 3A, dIEC/dt = 200A/µs - - 28 ns IGBT - - 3.75 oC/W 3.0 oC/W IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH Test Circuit (Figure 19) Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 7 VGE = 15V 6 5 4 3 2 1 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 3 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 20 TJ = 150oC, RG = 82Ω, VGE = 15V L = 500µH 18 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTP3N60B3D, HGT1S3N60B3DS TJ = 150oC, RG = 82Ω, L = 1mH, V CE = 480V 100 TC VGE 75oC 15V 75oC 10V 110oC 15V 110oC 10V 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 1 fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 3.75oC/W, SEE NOTES 3 2 1 5 4 7 6 8 45 16 VCE = 360V, RG = 82Ω, TJ = 125oC 40 14 ISC 12 35 10 30 25 8 tSC 20 6 4 10 11 12 TC = -55oC 10 TC = 150oC 8 6 TC = 25oC 4 2 0 0 1 2 3 4 5 6 7 8 15 15 9 10 30 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 25 TC = -55oC 20 15 TC = 150oC 10 TC = 25oC 5 0 0 1 2 3 4 5 6 7 8 9 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 0.7 0.6 RG = 82Ω, L = 1mH, VCE = 480V 0.6 EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 14 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250µs 13 VGE , GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) 14 12 ISC , PEAK SHORT CIRCUIT CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) 200 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves TJ = 25oC, TJ = 150oC, VGE = 10V 0.5 0.4 0.3 0.2 0.1 VGE = 15V, TJ = 150oC, TJ = 25oC 0 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 8 RG = 82Ω, L = 1mH, VCE = 480V 0.5 TJ = 150oC; VGE = 10V OR 15V 0.4 0.3 0.2 0.1 TJ = 25oC; VGE = 10V OR 15V 0 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 8 HGTP3N60B3D, HGT1S3N60B3DS Typical Performance Curves Unless Otherwise Specified (Continued) 80 45 RG = 82Ω, L = 1mH, VCE = 480V 70 40 TJ = 25oC, TJ = 150oC, VGE = 10V trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 82Ω, L = 1mH, VCE = 480V 35 30 25 20 15 60 TJ = 25oC AND TJ = 150oC, VGE = 10V 50 40 TJ = 25oC, TJ = 150oC, VGE = 15V 30 20 TJ = 25oC, TJ = 150oC, VGE = 15V 10 1 2 4 3 5 6 10 8 7 1 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 140 5 7 6 8 RG = 82Ω, L = 1mH, VCE = 480V RG = 82Ω, L = 1mH, VCE = 480V 225 TJ = 150oC, VGE = 15V 200 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 4 3 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 250 175 TJ = 150oC, VGE = 10V 150 125 TJ = 25oC, VGE = 15V 120 TJ = 150oC, VGE = 10V OR 15V 100 80 TJ = 25oC, VGE = 10V OR 15V 100 TJ = 25oC, VGE = 10V 75 60 1 2 4 3 5 6 7 8 1 3 2 4 5 7 6 8 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 15 30 VGE , GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) 2 ICE , COLLECTOR TO EMITTER CURRENT (A) TC = 25oC PULSE DURATION = 250µs 25 TC = -55oC 20 15 TC = 150oC 10 5 IG(REF) = 1mA, RL = 171Ω, TC = 25oC 12 9 6 5 6 7 8 9 10 11 12 13 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 5 14 15 VCE = 600V 3 0 0 VCE = 200V VCE = 400V 0 5 10 15 20 Qg , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 25 HGTP3N60B3D, HGT1S3N60B3DS Typical Performance Curves Unless Otherwise Specified (Continued) 500 FREQUENCY = 1MHz C, CAPACITANCE (pF) 400 CIES 300 200 COES 100 CRES 0 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 100 0.5 0.2 10-1 t1 0.1 PD 0.05 t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 15 30 12 t, RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) TC = 25oC, dIEC/dt = 200A/µs 150oC 9 6 25oC -55oC 3 25 trr 20 ta 15 10 tb 5 0 0 0.5 1.0 1.5 2.0 2.5 VEC , FORWARD VOLTAGE (V) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 6 3.0 0 0.5 1 2 3 IEC , FORWARD CURRENT (A) FIGURE 18. RECOVERY TIME vs FORWARD CURRENT 4 HGTP3N60B3D, HGT1S3N60B3DS Test Circuit and Waveforms HGTP3N60B3D 90% 10% VGE EON EOFF VCE L = 1mH 90% RG = 82Ω DUT + - ICE VDD = 480V FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT 10% td(OFF)I trI tfI td(ON)I FIGURE 20. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26™” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD is a Trademark of Emerson and Cumming, Inc.