HMC-AUH256 v01.0208 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz Typical Applications Features This HMC-AUH256 is ideal for: Gain: 21 dB • Point-to-Point Radios P1dB Output Power: +20 dBm • Point-to-Multi-Point Radios Wideband Performance: 17.5 to 40 GHz • VSAT Supply Voltage: +5V @ 295 mA • SATCOM Small Chip Size: 2.1 x 0.92 x 0.1 mm Functional Diagram General Description The HMC-AUH256 is a GaAs MMIC HEMT four stage Driver Amplifier which covers the frequency range of 17.5 to 40 GHz. The chip can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (1.93 mm2) size. The HMC-AUH256 offers 21 dB of gain and +20 dBm output power at 1 dB compression from a bias supply of +5V @ 295 mA. The HMC-AUH256 may also be used as a frequency doubler. Detail bias condition to achieve doubler operation. Electrical Specifi cations [1], TA = +25°C Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 295mA [2] Parameter Min. Frequency Range Typ. Max. Units 17.5 - 41 GHz Gain 21 dB Input Return Loss 8 dB 15 8 dB dB Output Return Loss 20 - 30 GHz 30 - 45 GHz Output Power for 1 dB Compression 20 dBm Saturated Output Power 23 dBm Output IP3 27 dBm Supply Current (Idd1 + Idd2 + Idd3 + Idd4) 295 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1 = Vgg2 = Vgg3 = Vgg4 between -1V to +0.3V (Typ. -0.3V) to achieve Idd1 = 50 mA, Idd2 = 50 mA, Idd3 = 75 mA, Idd4 = 120 mA 2 - 66 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH256 v01.0208 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz Linear Gain vs. Frequency Fixtured Pout vs. Frequency P3dB P1dB Output Return Loss vs. Frequency Return Loss (dB) Return Loss (dB) Input Return Loss vs. Frequency IP3 @ Pout= 18 dBm/tone For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com DRIVER & GAIN BLOCK AMPLIFIERS - CHIP Gain (dB) Pout (dBm), IP3 (dBm) 2 2 - 67 HMC-AUH256 v01.0208 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz x2 Pout vs. Frequency (vs Pad) Fixtured Pout vs. Frequency @ Pin= 8 dBm DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 Fixtured Pout vs. Frequency @ Pin= 10 dBm Absolute Maximum Ratings Drain Bias Voltage +5.5 Vdc RF Input Power 15 dBm Drain Bias Current (Idd1, Idd2) 62 mA Drain Bias Current (Idd3) 93 mA Drain Bias Current (Idd4) 150 mA Gate Bias Voltage -1 to +0.3 Vdc Channel Temperature 180 °C Thermal Resistance (channel to die bottom) 77.5 °C/W Storage Temperature -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Note: Multiplier Performance Characteristics (Typical Performance at 25°C) Vd1= 2V, Vd2= Vd3= Vd4= 5V, Id1= 5mA, Id2+Id3+Id4= 245mA 2 - 68 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH256 v01.0208 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 69 HMC-AUH256 v01.0208 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz Pad Descriptions DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 2 - 70 Pad Number Function Pad Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2-5 Vdd1-4 Power supply voltage for amplifier. See Assembly Diagram for required external components. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. 7 - 10 Vgg1-4 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die Bottom GND Die Bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH256 v01.0208 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz Assembly Diagram DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. Note 3: Vdd3 can be biased using on-chip pads Vdd3 or Vdd4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 71