HMC1082LP4E v00.0513 AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Typical Applications Features The HMC1082LP4E is ideal for: High Saturated Output Power: 26 dBm @ 26% PAE • Point-to-Point Radios High Output IP3: 35 dBm • Point-to-Multi-Point Radios High Gain: 22 dB • VSAT & SATCOM High P1dB Output Power: 24 dBm • Marine Radar DC Supply: +5V @ 220 mA • Military EW & ECM Compact 24 Lead 4x4 mm SMT Package: 16 mm2 Functional Diagram General Description The HMC1082LP4E is a GaAs pHEMT MMIC driver amplifier with an integrated temperature compensated on-chip power detector which operates between 5.5 and 18 GHz. The amplifier provides 22 dB of gain, +35 dBm Output IP3, and +24 dBm of output power at 1 dB gain compression, while requiring 220 mA from a +5V supply. The HMC1082LP4E is capable of supplying +26 dBm of saturated output power with 26 % PAE and is housed in a compact leadless 4x4 mm plastic surface mount package. The HMC1082LP4E is an ideal driver amplifier for a wide range of applications including point-to-point radio from 5.5 to 18 GHz and marine radar at 9 GHz. The HMC1082LP4E may also be used for 6 to 18 GHz EW and ECM applications. Electrical Specifications TA = +25° C, Vdd1 = Vdd2 = Vdd3 = +5V, Idd = +220 mA [1] Parameter Min Frequency Range Typ. Max Min 5.5 - 6.5 Gain 21.5 23.5 Typ. 20.5 22.5 7.5 dBm 14 17.5 dBm 23.5 dBm 10 Output Third Order Intercept (IP3) [2] Supply Current (Idd) 24 21 GHz 12 22 21 Units dB Output Return Loss 24 20 Max dB/°C Input Return Loss Saturated Output Power (Psat) Typ 17 - 18 22 0.0101 Output Power for 1 dB Compression (P1dB) Min 0.015 0.0121 Gain Variation over temperature Max 6.5 - 17 20.5 25.5 26 24.5 dBm 36 35 33.5 dBm 220 220 220 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 220mA typical [2] Measurement taken at Pout / tone = +12dBm 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1082LP4E v00.0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Gain vs. Temperature Broadband Gain & Return Loss 28 20 24 GAIN (dB) RESPONSE (dB) 26 10 0 -10 22 20 18 -20 16 -30 14 12 5.5 -40 4 6 8 10 12 14 16 18 20 8 10.5 S21 S11 +25 C S22 0 -5 -5 -10 -15 -20 -25 +85 C -40 C -10 -15 -20 -25 8 10.5 13 15.5 -35 5.5 18 8 10.5 +25 C +85 C -40 C +25 C P1dB vs. Temperature 28 26 26 24 24 P1dB (dBm) 30 28 22 20 +85 C -40 C 20 18 16 16 14 14 13 15.5 18 12 5.5 8 10.5 FREQUENCY (GHz) +25 C 18 22 18 10.5 15.5 P1dB vs. Supply Voltage 30 8 13 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) 18 -30 -30 12 5.5 15.5 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -35 5.5 13 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - SMT 30 30 +85 C 13 15.5 18 FREQUENCY (GHz) -40 C 4V 4.5V 5V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1082LP4E v00.0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz 30 28 28 26 26 24 24 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 30 22 20 22 20 18 18 16 16 14 14 12 5.5 8 10.5 13 15.5 12 5.5 18 8 10.5 FREQUENCY (GHz) +25 C +85 C -40 C 4V 28 26 26 24 24 Psat (dBm) 30 28 22 20 18 16 14 14 13 15.5 12 5.5 18 8 10.5 FREQUENCY (GHz) 180 mA 220 mA 250 mA 40 38 38 36 36 34 34 32 30 28 24 22 22 15.5 18 20 5.5 8 250 mA 10.5 13 15.5 18 FREQUENCY (GHz) FREQUENCY (GHz) +85 C 220 mA 28 26 +25 C 18 30 24 13 15.5 32 26 10.5 13 Output IP3 vs. Supply Current [1] IP3 (dBm) IP3 (dBm) 180 mA 40 8 5V FREQUENCY (GHz) Output IP3 vs. Temperature [1] 20 5.5 4.5V 20 16 10.5 18 22 18 8 15.5 Psat vs. Supply Current 30 12 5.5 13 FREQUENCY (GHz) P1dB vs. Supply Current P1dB (dBm) AMPLIFIERS - LINEAR & POWER - SMT Psat vs. Temperature -40 C 180 mA 220 mA 250 mA [1] Pout/Tone = +12 dBm 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1082LP4E v00.0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Output IP3 vs. Supply Voltage [1] Output IM3 @ Vdd = +4V 38 60 36 IM3 (dBc) IP3 (dBm) 34 32 30 28 50 40 26 30 24 22 20 20 5.5 8 10.5 13 15.5 4 18 6 8 4V 4.5V 7 GHz 9 GHz 5V 12 14 16 12 GHz 15 GHz 17 GHz Output IM3 @ Vdd = +5V 70 70 60 60 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd = +4.5V 50 40 30 50 40 30 20 20 4 6 8 10 12 14 16 4 6 8 Pout/TONE (dBm) 12 GHz 15 GHz 7 GHz 9 GHz 17 GHz 500 25 450 20 400 15 350 10 300 5 250 0 200 -4 -2 0 2 4 Gain 16 6 12 GHz 15 GHz 17 GHz 8 10 27 26 25 24 23 22 21 20 180 190 200 210 220 230 240 250 Idd (mA) INPUT POWER (dBm) Pout 14 28 Idd (mA) 30 -6 12 Gain & Power vs. Supply Current Power Compression @ 12 GHz -8 10 Pout/TONE (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 7 GHz 9 GHz Pout(dBm), GAIN(dB), PAE(%) 10 Pout/TONE (dBm) FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - SMT 70 40 PAE GAIN P1dB Psat Idd [1] Pout/Tone = +12 dBm For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1082LP4E v00.0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Gain & Power vs. Supply Voltage Reverse Isolation vs. Temperature Gain (dB), P1dB (dBm), Psat (dBm) -20 27 -30 ISOLATION (dB) 26 25 24 23 -40 -50 -60 22 -70 21 20 4 4.2 4.4 4.6 4.8 -80 5.5 5 8 10.5 Vdd (V) GAIN P1dB Psat +25 C 10 1.2 1 Vref-Vdet (V) 1.4 1 0.8 18 +85 C -40 C 0.1 0.01 0.6 0.001 0.4 -8 -6 -4 -2 0 2 4 6 8 10 0.0001 -20 -10 INPUT POWER (dBm) 7 GHz 10 GHz 12 GHz 14 GHz 17 GHz +25 C 10 20 30 10 1 1 0.1 0.01 +85 C - 40 C Detector Voltage vs. Temperature @ 18 GHz 10 0.1 0.01 0.001 0.0001 -20 0 OUTPUT POWER (dBm) Vref-Vdet (V) Vref-Vdet (V) 15.5 Detector Voltage vs. Temperature @ 6 GHz Detector Voltage vs. Temperature @ 12 GHz 0.001 -10 0 10 20 30 0.0001 -20 -10 OUTPUT POWER (dBm) +25 C 5 13 FREQUENCY (GHz) Power Dissipation POWER DISSIPATION (W) AMPLIFIERS - LINEAR & POWER - SMT 28 +85 C 0 10 20 30 OUTPUT POWER (dBm) - 40 C +25 C +85 C - 40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1082LP4E v00.0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) 5.5V Vdd (V) Idd (mA) RF Input Power (RFIN) 20 dBm +4 220 Channel Temperature 175 °C +4.5 220 +5 220 Continuous Pdiss (T=85 °C) (derate 20mW/°C 1.81W Maximum Junction Temperature 141 °C Thermal Resistance (RTH) (junction to ground paddle) 49.8 °C/W Operating Temperature -40°C to +85°C Storage Temperature -65°C to 150°C ESD Sensitivity (HBM) Class 0, Passed 100V Adjust Vgg1 to achieve Idd = 220mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LINEAR & POWER - SMT Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR Package Information SUGGESTED PCB LAND PATTERN. Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1] HMC1082LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 H1082 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC1082LP4E v00.0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Pin Descriptions AMPLIFIERS - LINEAR & POWER - SMT Pin Number 7 Function Description 1, 2, 5, 6, 7, 8, 10, 13, 14, 17, 18, 19, 21, 23 N/C These pins are not connected internally, however all data shown herein was measured with these pins connected to RF/DC ground externally. 3 RF IN This pin is DC coupled and matched to 50 Ohms. 4, 15 GND These pins and package bottom must be connected to RF/DC ground. 9 Vgg Gate control for amplifier. External bypass capacitors of 1000pF, 100pF and 2.2uF are required. 11 Vref DC bias of diode biased through external resistor used for temperature compensation of Vdet. See application circuit. 12 Vdet DC voltage representing RF output power rectified by diode which is biased through an external resistor. See application circuit. 16 RF OUT This pin is AC coupled and matched to 50 Ohms. 24, 22, 20 Vdd1, Vdd2, Vdd3 Drain bias voltage for amplifier. External bypass capacitors of 1000pF, 100pF and 2.2uF are required. Pin Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1082LP4E v00.0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz AMPLIFIERS - LINEAR & POWER - SMT Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC1082LP4E v00.0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz AMPLIFIERS - LINEAR & POWER - SMT Evaluation PCB List of Materials for Evaluation PCB EV1HMC1082LP4 Item Description J1, J2 PCB Mount SMA RF Connector J5 - J12 DC Pin C1 - C4 100pF Capacitor, 0402 Pkg. C5 - C8 1000pF Capacitor, 0402 Pkg C9 - C12 2.2uF Capacitor, 0402 Pkg. R1, R2 40.2k Ohm Resistor, 0402 Pkg. U1 HMC1082LP4E PCB [2] 600-00819-00 Evaluation Board [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering Complete Evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1082LP4E v00.0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz AMPLIFIERS - LINEAR & POWER - SMT Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10