HITTITE HMC463LP5_11

HMC463LP5 / 463LP5E
v08.0511
Amplifiers - Low Noise - SMT
7
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
Typical Applications
Features
The HMC463LP5(E) is ideal for:
Gain: 13 dB
• Telecom Infrastructure
Noise Figure: 2.8 dB @ 10 GHz
• Microwave Radio & VSAT
P1dB Output Power: +18 dBm @ 10 GHz
• Military EW, ECM & C I
Supply Voltage: +5V @ 60 mA
• Test Instrumentation
50 Ohm Matched Input/Output
• Fiber Optics
32 Lead 5 x 5 mm SMT Package: 25 mm²
Functional Diagram
General Description
3
The HMC463LP5(E) is a GaAs MMIC pHEMT Low
Noise AGC Distributed Amplifier packaged in a leadless 5x5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides
13 dB of gain, 2.8 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring
only 60 mA from a +5V supply. An optional gate bias
(Vgg2) is provided to allow Adjustable Gain Control
(AGC) of 8 dB typical. Gain flatness is excellent at
±0.5 dB from 6 - 18 GHz making the HMC463LP5(E)
ideal for EW, ECM RADAR and test equipment applications. The HMC463LP5(E) LNA I/Os are internally
matched to 50 Ohms and are internally DC blocked.
Electrical Specifications, TA = +25 °C, Vdd = 5V, Idd = 60 mA*
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
2-6
10
±0.5
Gain Variation Over Temperature
Max.
Min.
6 - 18
13
Gain Flatness
Typ.
9
12
8
±0.5
Typ.
Max.
Units
18 - 20
GHz
11
dB
±0.5
dB
0.010
0.015
0.010
0.015
0.010
0.015
Noise Figure
3
4
3
5
5.5
6.5
Input Return Loss
15
13
12
dB
Output Return Loss
13
10
10
dB
12
dBm
Output Power for 1 dB Compression
(P1dB)
16
19
11
16
10
dB/ °C
dB
Saturated Output Power (Psat)
21
19
19
dBm
Output Third Order Intercept (IP3)
30
24
22
dBm
Supply Current
(Idd) (Vdd = 5V, Vgg1 = -0.9V Typ.)
60
80
60
80
60
80
mA
* Adjust Vgg1 between -2 to -0V to achieve Idd = 60 mA typical.
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC463LP5 / 463LP5E
v08.0511
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
Gain & Return Loss
7
Gain vs. Temperature
15
16
5
S21
S11
S22
0
GAIN (dB)
RESPONSE (dB)
10
-5
-10
12
8
-15
+25C
+85C
-40C
4
-20
-25
0
-30
0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
Input Return Loss vs. Temperature
10
12
14
16
18
20
22
Output Return Loss vs. Temperature
0
0
RETURN LOSS (dB)
+25C
+85C
-40C
-5
RETURN LOSS (dB)
8
FREQUENCY (GHz)
FREQUENCY (GHz)
-10
-15
-20
+25C
+85C
-40C
-5
-10
Amplifiers - Low Noise - SMT
20
20
-15
-25
-20
-30
0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
Reverse Isolation vs. Temperature
10
12
14
16
18
20
22
18
20
22
Noise Figure vs. Temperature
0
10
+25C
+85C
-40C
+25C
+85C
-40C
8
NOISE FIGURE (dB)
-10
ISOLATION (dB)
8
FREQUENCY (GHz)
FREQUENCY (GHz)
-20
-30
-40
6
4
2
-50
-60
0
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
16
18
20
22
0
2
4
6
8
10
12
14
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7-2
HMC463LP5 / 463LP5E
v08.0511
Psat vs. Temperature
26
26
22
22
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature
18
14
18
+25C
+85C
-40C
10
+25C
+85C
-40C
14
10
6
6
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
GAIN (dB), P1dB (dBm), Psat (dBm)
32
29
IP3 (dBm)
26
23
20
+25C
+85C
-40C
14
14
16
18
20
22
24
4.5
22
4
20
3.5
18
3
16
2.5
14
2
12
1.5
10
8
1
Gain
P1dB
Psat
NOISE FIGURE
2
4
6
8
10
12
14
16
18
20
22
0.5
0
4.5
5
FREQUENCY (GHz)
5.5
Vdd (V)
Gain, P1dB & Output IP3
vs. Control Voltage @ 10 GHz
Noise Figure & Supply Current
vs. Control Voltage @ 10 GHz
32
75
5.5
28
70
5
65
4.5
60
4
55
3.5
50
3
45
2.5
40
2
35
1.5
24
Idd (mA)
20
16
12
8
4
Gain
P1dB
IP3
0
Idd
25
-4
-1.4 -1.2
1
30
NOISE FIGURE
0.5
0
20
-1
-0.8 -0.6 -0.4 -0.2
Vgg2 (V)
0
0.2
0.4
0.6
0.8
1
-1.4 -1.2
-1
-0.8 -0.6 -0.4 -0.2
0
0.2
0.4
0.6
0.8
1
Vgg2 (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
NOISE FIGURE (dB)
GAIN (dB), P1dB (dBm), IP3 (dBm)
12
6
0
7-3
10
Gain, Power & Noise Figure
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
Output IP3 vs. Temperature
17
8
FREQUENCY (GHz)
NOISE FIGURE (dB)
Amplifiers - Low Noise - SMT
7
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
HMC463LP5 / 463LP5E
v08.0511
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
18
13
GAIN (dB)
8
3
-2
Vgg2 = -1.3V
Vgg2 = -1.2V
Vgg2 = -1.1V
Vgg2 = -1.0V
Vgg2 = -0.9V
-7
Vgg2 = -0.8V
Vgg2 = -0.6V
Vgg2 = -0.4V
Vgg2 = -0.2V
Vgg2 = 0V
-12
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
7
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9V
Gate Bias Voltage (Vgg1)
-2 to 0V
Gate Bias Current (Igg1)
2.5 mA
Gate Bias Voltage (Vgg2)(AGC)
(Vdd -9) Vdc to +2V
RF Input Power (RFIN)(Vdd = +5V)
+18 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 19.1 mW/°C above 85 °C)
1.24 W
Thermal Resistance
(channel to ground paddle)
52.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+4.5
58
+5.0
60
+5.5
62
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Amplifiers - Low Noise - SMT
Gain @ Several Control Voltages (Vgg2)
7-4
HMC463LP5 / 463LP5E
v08.0511
Outline Drawing
Amplifiers - Low Noise - SMT
7
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15 mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05 mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05 mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC463LP5
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
HMC463LP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
Package Marking [3]
H463
XXXX
H463
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
7-5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC463LP5 / 463LP5E
v08.0511
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
Pin Number
Function
Description
1, 3, 4, 6-14,
16-20, 22-29,
31, 32
N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
2
Vgg2
Optional gate control if AGC is required.
Leave Vgg2 open circuited if AGC is not required.
Typical Vgg2 = -1.5V to 0V
5
RFIN
This pad is AC coupled and matched to 50 Ohms
15
Vgg1
Gate control for amplifier. Adjust to achieve Idd = 60 mA.
21
RFOUT
This pad is AC coupled and matched to 50 Ohms
30
Vdd
Power supply voltage for the amplifier.
External bypass capacitors are required
Ground
Paddle
GND
Ground paddle must be connected to RF/DC ground.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Amplifiers - Low Noise - SMT
7
Pin Descriptions
7-6
HMC463LP5 / 463LP5E
v08.0511
Application Circuit
Amplifiers - Low Noise - SMT
7
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
7-7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC463LP5 / 463LP5E
v08.0511
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
7
Amplifiers - Low Noise - SMT
Evaluation PCB
List of Materials for Evaluation PCB 108341
Item
Description
J1 - J2
SRI K Connector
J3 - J4
2 mm Molex Header
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4 - C6
1000 pF Capacitor, 0603 Pkg.
C7 - C8
4.7 µF Capacitor, Tantalum
U1
HMC463LP5(E) Amplifier
PCB [2]
109949 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
[1]
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and package bottom should be
connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7-8