HMC641 v01.0108 SWITCHES - CHIP 4 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz Typical Applications Features The HMC641 is ideal for: Broadband Performance: DC - 18 GHz • Telecom Infrastructure High Isolation: 42 dB @ 12 GHz • Microwave Radio & VSAT Low Insertion Loss: 2.1 dB @ 12 GHz • Military & Space Hybrids Integrated 2:4 TTL Decoder • Test Instrumentation Small Size: 1.92 x 1.60 x 0.10 mm Functional Diagram General Description The HMC641 is a broadband non-reflective GaAs PHEMT SP4T switch chip. Covering DC to 18 GHz, this switch offers high isolation and low insertion loss and extends the frequency coverage of Hittite’s SP4T switch product line. This switch also includes an on board binary decoder circuit which reduces the number of required logic control lines to two. The switch operates using a negative control voltage of 0/-5V, and requires a fixed Vss bias of -5V. All data is tested with the chip in a 50 Ohm test fixture connected via one 3.0 x 0.5 mil gold ribbon of minimal length on each RF port. Electrical Specifi cations, TA = +25° C, With 0/-5V Control, Vss= -5V, 50 Ohm System Parameter Frequency Typ. Max. Units 1.8 2.8 2.1 3.1 dB dB Insertion Loss Isolation (RFC to RF1 - RF4) DC - 12 GHz DC - 18 GHz 39 37 42 40 dB dB DC - 12 GHz DC - 18 GHz 12 11 15 14 dB dB Return Loss “On State” Return Loss “Off State” DC - 18 GHz 12 15 dB Input Power for 1 dB Compression 2.05- 18 GHz 21 24 dBm Input Third Order Intercept (Two-Tone Input Power= +14 dBm Each Tone) 0.05 - 18 GHz 37 40 dBm 14 95 ns ns Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 4 - 38 Min. DC - 12 GHz DC - 18 GHz DC - 18GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz Insertion Loss vs. Temperature Isolation 0 -10 -1 ISOLATION (dB) -2 -3 +25 C +85 C - 55 C -4 RF1 RF2 RF3 RF4 -20 -30 -40 4 -50 -60 -5 -70 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 FREQUENCY (GHz) Return Loss 12 14 16 18 20 16 18 1 dB Input Compression Point 28 INPUT COMPRESSION POINT (dBm) 0 RFC RF1,2,3,4 On RF1,2,3,4 Off -5 -10 -15 -20 -25 26 24 22 20 18 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 FREQUENCY (GHz) 8 10 12 14 FREQUENCY (GHz) Input Third Order Intercept Point @ +14 dBm Tone Power 50 45 40 IP3 (dBm) RETURN LOSS (dB) 10 FREQUENCY (GHz) SWITCHES - CHIP INSERTION LOSS (dB) 0 35 30 25 20 15 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 39 HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz IP3 vs. Input Tone Power @ 12 GHz 44 44 42 42 40 40 IP3 (dBm) 4 IP3 (dBm) IP3 vs. Input Tone Power @ 500 MHz 38 SWITCHES - CHIP 36 36 34 34 0 2 4 6 8 10 12 14 0 2 4 6 POWER (dBm) 8 10 12 14 POWER (dBm) Absolute Maximum Ratings Bias Voltage Range (Vss) -7 Vdc Control Voltage Range (A & B) Vss -0.5V to +1 Vdc Channel Temperature 150 °C Thermal Resistance Channel to die bottom (Insertion Loss Path) 188 °C/W Thermal Resistance Channel to die bottom (Terminated Path) 222 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Maximum Input Power +24 dBm ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 4 - 40 38 Truth Table Control Input Signal Path State A B RFC to: High High RF1 Low High RF2 High Low RF3 Low Low RF4 Bias Voltage & Current Vss Range= -5.0 Vdc ±10% Vss (Vdc) Iss (Typ) (mA) Iss (Max) (mA) -5 3 6 TTL/CMOS Control Voltages State Bias Condition Low -3V to 0 Vdc @ 60 uA Typ. High -5 to -4.2 Vdc @ 5 uA Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz Outline Drawing SWITCHES - CHIP 4 Die Packaging Information [1] NOTES: 1. DIMENSIONS IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS 0.004”. Standard Alternate WP-18 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3. TYPICAL BOND PAD IS 0.004” SQUARE. 4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 41 HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz Pad Descriptions Pad Number SWITCHES - CHIP 4 Function Description 1, 2, 3, 7, 8 RFC, RF1, RF2, RF3, RF4 These pads are DC coupled and matched to 50 Ohms. Blocking capacitors are required if RF line potential is not equal to 0V. 4 CTLA See Truth Table and Control Voltage Table. 5 CTLB See Truth Table and Control Voltage Table. 6 Vss Supply Voltage -5.0 Vdc ± 10%. Die Bottom GND Die Bottom must be connected to RF/DC ground. Interface Schematic TTL Interface Circuit Note: Control inputs A and B can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and to Vss Pad of the RF Switch. 4 - 42 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz Assembly Diagram SWITCHES - CHIP 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 43