HANBIT HMF2M32F4VSB-120

HANBit
HMF2M32F4VSB
Flash-ROM Module 8MByte (2Mx32Bit), 80Pin-SMM, 3.3V Design
Part No. HMF2M32F4VSB
GENERAL DESCRIPTION
The HMF2M32F4VSB is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a
x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are
LVTTL-compatible.
PIN ASSIGNMENT
FEATURES
P1
w Part Identification
- HMF2M32F4VSB : Socket 5mm
w Access time: 90, 100, 120ns
P2
PIN
Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
1
VCC
21
VCC
1
VCC
21
VCC
2
CE0*
22
DQ16
2
DQ15
22
NC
w High-density 8MByte design
3
NC
23
DQ24
3
DQ7
23
NC
w High-reliability, low-power design
4
NC
24
DQ17
4
DQ14
24
BYTE*
w Single + 3.0V ± 0.5V power supply
5
NC
25
DQ25
5
DQ6
25
OE*
6
RY_BY*
26
DQ18
6
DQ13
26
CE1*
7
VSS
27
VSS
7
VSS
27
VSS
8
RESET*
28
DQ26
8
DQ5
28
A13
9
WE*
29
DQ19
9
DQ12
29
A29
10
A10
30
DQ27
10
DQ4
30
A11
11
A21
31
DQ20
11
DQ11
31
A12
12
A20
32
DQ28
12
DQ3
32
A22
13
A19
33
DQ21
13
DQ10
33
A23
w All in/outputs are LVTTL-compatible
w FR4-PCB design
w 80-pin Designed by
40-pin Fine Pitch Connector (x 2EA)
w Minimum 1,000,000 write/erase cycle
w Sector erases architecture
OPTIONS
MARKING
w Timing
14
VSS
34
VSS
14
VSS
34
VSS
-90
15
A18
35
DQ29
15
DQ2
35
A24
100ns access
-100
16
A17
36
DQ22
16
DQ9
36
A25
120ns access
-120
17
A16
37
DQ30
17
DQ1
37
A26
18
A15
38
DQ23
18
DQ8
38
A27
19
A14
39
DQ31
19
DQ0
39
A28
20
VCC
40
VCC
20
VCC
40
VCC
90ns access
w Packages
80-pin SMM
F
4 cf : Address & Data Bus is organized for LG Specification.
( A10 & DQ0 are MSB, A29 & DQ31 are LSB)
URL: www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
HMF2M32F4VSB
FUNCTIONAL BLOCK DIAGRAM
32
DQ0 - DQ31
20
A10 – A29
A10-29
DQ16-31
/WE
/OE
U1
/CE
RY-BY
/Reset
A10-29
DQ 0-15
/WE
/OE
/CE0
U2
/CE
RY-BY
/Reset
A10-29
DQ16-31
/WE
/OE
U3
/CE
RY-BY
/Reset
A10-29
DQ 0-15
/WE
/WE
/OE
/OE
/CE
/CE1
URL: www.hbe.co.kr
REV.02(August,2002)
U4
RY_/BY
RY-BY
/Reset
/Reset
2
HANBit Electronics Co., Ltd.
HANBit
HMF2M32F4VSB
TRUTH TABLE
MODE
/OE
/CE
/WE
/RESET
DQ ( /BYTE=L )
POWER
STANDBY
X
H
X
Vcc±0.3V
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
H
HIGH-Z
ACTIVE
READ
L
L
H
H
DOUT
ACTIVE
WRITE or ERASE
X
L
L
H
DIN
ACTIVE
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to Vcc+0.5V
Voltage with respect to ground Vcc
VCC
-0.5V to +4.0V
Storage Temperature
TSTG
-65oC to +150oC
Voltage with respect to ground all other pins
Operating Temperature
TA
-40oC to +85oC
w Stresses greater than those listed un der " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
TYP.
MAX
Vcc for ± 10% device Supply Voltages
Vcc
2.7V
3.0
3.6V
Ground
VSS
0
0
0
DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNIT
Input Leakage Current
Vcc=Vcc max, VIN= GND to Vcc
IL1
-10
1.0
µA
Output Leakage Current
Vcc=Vcc max, VOUT= GND to Vcc
IL0
-10
1.0
µA
Output High Voltage
IOH = -2.0mA, Vcc = Vcc min
VOH
0.85x Vcc
-
V
Output Low Voltage
IOL = 4.0mA, Vcc =Vcc min
VOL
-
0.4
V
-
64
-
32
/CE = VIL,
5MHZ
Vcc Active Read Current (1)
ICC1
/OE = VIH,
1MHZ
mA
Vcc Active Write Current (2)
/CE = V IL, /OE=VIH
ICC2
-
120
mA
Vcc Standby Current
/CE, /RESET=Vcc±0.3V
ICC3
-
120
mA
VLKO
1.5
-
V
Low Vcc Lock-Out Voltage
Notes:
1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz).
2. Icc active while embedded algorithm (program or erase) is in progress
3. Not 100% tested
ERASE AND PROGRAMMING PERFORMANCE
URL: www.hbe.co.kr
REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
HMF2M32F4VSB
LIMITS
PARAMETER
UNIT
MIN.
Block Erase Time
-
Chip Erase Time
TYP.
MAX.
0.7
15
COMMENTS
sec
27
Excludes 00H programming
prior to erasure
sec
Word Programming Time
-
11
330
µs
Chip Programming Time
-
12
36
sec
Excludes system-level
overhead
TSOP CAPACITANCE
PARAMETER
SYMBOL
PARAMETER
DESCRIPTION
CIN
TEST SETUP
MIN
MAX
UNIT
VIN = 0
-
10
pF
VOUT = 0
-
10
pF
VIN = 0
-
10
pF
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Notes : Capacitance is periodically sampled and not 100% tested.
TEST SPECIFICATIONS
TEST CONDITION
VALUE
Output load
UNIT
1TTL gate
Input rise and full times
5
ns
0 to 3
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input pulse levels
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
URL: www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
HMF2M32F4VSB
AC CHARACTERISTICS
u Read Only Operations Characteristics
SPEED
PARAMETER
DESCRIPTION
- 90
MIN
-100
MAX
MAX
100
MIN
MAX
tRC
Read Cycle Time
tACC
Address Access time
90
100
120
ns
tCE
Chip Enable to Access time
90
100
120
ns
tOE
Output Enable time
35
40
50
ns
tDF
Chip Enable to Output High-Z
30
30
30
ns
tOEH
Output Enable Hold Time
Output Hold Time From Addresses,
/CE or /OE
tQH
90
MIN
UNIT
-120
120
ns
0
0
0
ns
0
0
0
ns
u Erase/Program Operations
Alternate /WE Controlled Writes
- 90
PARAMETER
DESCRIPTION
-100
MIN
MAX
MIN
Write Cycle Time (1)
90
-
Address Setup Time
0
-
tAH
Address Hold Time
45
tDS
Data Setup Time
tWC
tAS
tDH
tOES
tGHWL
tCS
-120
MAX
MIN
MAX
100
-
120
-
ns
0
-
0
-
ns
-
45
-
50
-
ns
45
-
45
-
50
-
ns
Data Hold Time
0
-
0
-
0
-
ns
Output Enable Setup Time
0
-
0
-
0
-
ns
Read Recover Time Before Write
0
-
0
-
0
-
ns
/CE Setup Time
0
-
0
-
0
-
ns
-
0
-
0
-
ns
tCH
/CE Hold Time
0
tWP
Write Pulse Width
45
-
45
-
50
-
ns
tWPH
Write Pulse Width High
30
-
30
-
30
-
ns
tPGM
Programming Operation
tBERS
Block Erase Operation (2)
tVCS
Vcc set up time
11
11
11
ns
0.7
50
-
0.7
50
-
0.7
50
-
ns
Write Recover Time Before RY_/BY
0
-
0
-
0
-
ns
tRH
/RESRT High Before Read
50
-
50
-
50
-
ns
tRPD
/RESRT to Power Down Time
20
-
20
-
20
-
ns
/RESRT Pulse Width
500
-
500
-
500
-
ns
/RESRT Setup Time
500
-
500
-
500
-
ns
tRB
tRP
tRSTS
ns
Notes : : 1. Not 100% tested
2 . The duration of the program or erase operation varies and is calculated in the internal algorithms.
URL: www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
HANBit
HMF2M32F4VSB
u Erase/Program Operations
Alternate /CE Controlled Writes
- 90
PARAMETER
-100
-120
DESCRIPTION
MIN
MAX
MIN
MAX
MIN
MAX
tWC
Write Cycle Time(1)
90
-
100
-
120
-
ns
tAS
Address Setup Time
0
-
0
-
0
-
ns
tAH
Address Hold Time
45
-
45
-
50
-
ns
tDS
Data Setup Time
45
-
45
-
50
-
ns
tDH
Data Hold Time
0
-
0
-
0
-
ns
tOES
Output Enable Setup Time
0
-
0
-
0
-
ns
Read Recover Time Before Write
0
-
0
-
0
-
ns
tCS
/CE Setup Time
0
-
0
-
0
-
ns
tCH
/CE Hold Time
0
-
0
-
0
-
ns
tWP
Write Pulse Width
45
-
45
-
50
-
ns
tWPH
Write Pulse Width High
30
-
30
-
30
-
ns
tPGM
Programming Operation
tBERS
Block Erase Operation (2)
tGHWL
11
0.7
11
-
0.7
11
-
0.7
ns
-
ns
Notes : 1. Not 100% tested
2 . This does not include the preprogramming time
u READ OPERATIONS TIMING
URL: www.hbe.co.kr
REV.02(August,2002)
6
HANBit Electronics Co., Ltd.
HANBit
HMF2M32F4VSB
u RESET TIMING
u PROGRAM OPERATIONS TIMING
Alternate /WE Controlled Writes
URL: www.hbe.co.kr
REV.02(August,2002)
7
HANBit Electronics Co., Ltd.
HANBit
HMF2M32F4VSB
Alternate /CE Controlled Writes
u CHIP/BLOCK ERASE OPERATION TIMINGS
URL: www.hbe.co.kr
REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
HMF2M32F4VSB
u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION
u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION
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REV.02(August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
HMF2M32F4VSB
u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION
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Ltd.
REV.02(August,2002)
10
HANBit Electronics Co.,
HANBit
HMF2M32F4VSB
PACKAGE DIMMENSIONS
Unit : mm
PCB Thickness : 1.3 ± 0.1mm
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Ltd.
REV.02(August,2002)
11
HANBit Electronics Co.,
HANBit
HMF2M32F4VSB
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF2M32F4VSB-90
8MByte
x 32
80Pin – SMM
HMF2M32F4VSB-100
8Mbyte
x 32
HMF2M32F4VSB-120
8Mbyte
x 32
URL: www.hbe.co.kr
Ltd.
REV.02(August,2002)
Component
Vcc
SPEED
4EA
3.3V
90ns
80Pin – SMM
4EA
3.3V
100ns
80Pin – SMM
4EA
3.3V
120ns
12
Number
HANBit Electronics Co.,