HANBit HMS51232M4L HAN SRAM MODULE 2Mbyte (512K x 32-Bit), BIT SIMM 5V LOW POWER, 72-Pin Part No. HMS51232M4L GENERAL DESCRIPTION The HMS51232M4L is a static random access memory (SRAM) module containing 524,288 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4printed circuit board. The HMS51232M4L also support low data retention voltage for battery back-up operations with low data retention current. Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1 and /CE_LL1) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible. FEATURES PIN ASSIGNMENT Vss A3 A2 A1 A0 Vcc A11 /OE A10 Vcc NC /CE_LL1 DQ7 DQ0 DQ1 DQ2 DQ6 DQ5 DQ4 DQ3 A15 A17 /WE A13 Vcc DQ8 DQ9 DQ10 NC Vcc /CE_LM1 DQ15 DQ14 DQ13 DQ12 DQ11 Access time : 55, 70ns High-density 2MByte design High-reliability, low-power design Single +5V ±0.5V power supply Low data retention voltage : 2V(min) Three state output and TTL-compatible FR4-PCB design Low profile 72-Pin SIMM OPTIONS MARKING Timing 55ns access -55 70ns access -70 Packages 72-pin SIMM M 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 A18 A16 Vss A6 Vcc A5 A4 Vcc NC /CE_UM1 DQ23 DQ16 DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 Vcc A14 A12 A7 Vcc A8 A9 DQ24 DQ25 DQ26 NC /CE_UU1 DQ31 DQ30 DQ29 DQ28 DQ27 Vss 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 72-Pin SIMM TOP VIEW 1 HANBit Electronics Co.,Ltd. HANBit HMS51232M4L FUNCTIONAL BLOCK DIAGRAM 32 DQ0 - DQ31 A0 - A18 19 A0-18 DQ 0-7 /WE U1 /OE /CE /CE_UU1 A0-18 DQ 8-15 /WE U2 /OE /CE /CE_UM1 A0-18 DQ16-23 /WE U3 /OE /CE /CE_LM1 A0-18 DQ24-31 /WE /WE /OE /OE U4 /CE /CE_LL1 TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Dout ACTIVE WRITE X L L Din ACTIVE 2 HANBit Electronics Co.,Ltd. HANBit HMS51232M4L ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to +7.0V Voltage on Vcc Supply Relative to Vss VCC -0.5V to +7.0V Power Dissipation PD 4W TSTG -65oC to +150oC Voltage on Any Pin Relative to Vss Storage Temperature Operating Temperature TA 0oC to +70oC Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER * ( TA=0 to 70 o C ) SYMBOL MIN TYP. MAX Supply Voltage VCC 4.5V 5.0V 5.5V Ground VSS 0 0 0 Input High Voltage VIH 2.2 - Vcc+0.5V** Input Low Voltage VIL -0.5* - 0.8V VIL(Min.) = -2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA ** VIH(Min.) = Vcc+2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA DC AND OPERATING CHARACTERISTICS (1)(0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current TEST CONDITIONS VIN = Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC SYMBO L MIN MAX UNITS ILI -4 4 µA IL0 -4 4 µA 2.4 Output High Voltage IOH = -4.0mA VOH Output Low Voltage IOL = 8.0mA VOL V 0.4 V * Vcc=5.0V, Temp=25 oC 3 HANBit Electronics Co.,Ltd. HANBit HMS51232M4L DC AND OPERATING CHARACTERISTICS (2) MAX DESCRIPTION Power Supply Current:Operating Power Supply Current:Standby TEST CONDITIONS IIO=0mA,/CE=VIL, VIN=VIL or VIH, Read SYMBOL -55 -70 UNIT lCC 60 60 mA /CE=VIH, Other inputs=VIL or VIH lSB 12 12 mA /CE≥Vcc-0.2V, inputs=0~Vcc lSB1 400 400 µA Other CAPACITANCE DESCRIPTION TEST CONDITIONS SYMBOL MAX UNIT Input /Output Capacitance VI/O=0V CI/O 32 pF Input Capacitance VIN=0V CIN 40 pF * NOTE : Capacitance is sampled and not 100% tested AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V, unless otherwise specified) TEST CONDITIONS PARAMETER VALUE Input Pulse Level 0.8 to 2.4V Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 1.5V Output Load CL=100pF + 1TTL * See test condition of DC and Operating characteristics CL* * Including scope and jig capacitance 4 HANBit Electronics Co.,Ltd. HANBit HMS51232M4L READ CYCLE -55 PARAMETER -70 UNIT SYMBOL MIN MAX MIN MAX Read Cycle Time tRC Address Access Time tAA 55 70 ns Chip Select to Output tCO 55 70 ns Output Enable to Output tOE 25 35 ns Output Enable to Low-Z Output tOLZ 5 5 ns Chip Enable to Low-Z Output tLZ 10 10 ns Output Disable to High-Z Output tOHZ 0 20 0 25 ns Chip Disable to High-Z Output tHZ 0 20 0 25 ns Output Hold from Address Change tOH 10 55 70 ns 10 ns WRITE CYCLE PARAMETER -55 -70 UNIT SYMBOL MIN MAX MIN MAX Write Cycle Time tWC 55 70 ns Chip Select to End of Write tCW 45 60 ns Address Set-up Time tAS 0 0 ns Address Valid to End of Write tAW 45 60 ns Write Pulse Width tWP 40 50 ns Write Recovery Time tWR 0 0 ns Write to Output High-Z tWHZ 0 Data to Write Time Overlap tDW 25 30 ns Data Hold from Write Time tDH 0 0 ns End of Write to Output Low-Z tOW 5 5 ns 5 20 0 25 ns HANBit Electronics Co.,Ltd. HANBit HMS51232M4L TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE( Address Controlled) ( /CE = /OE = VIL , /WE = VIH) tRC Address tAA tOH Data out Previous Data Valid Data Valid TIMING WAVEFORM OF READ CYCLE (/WE = VIH ) tRC Address tHZ(3,4) tAA tCO /CE tLZ(4) tOHZ tOE /OE tOH tOLZ Data Out High-Z Data Valid Notes (Read Cycle) 1. /WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ (max.) is less than tLZ (min.) both for a given device and from device to device. 6 HANBit Electronics Co.,Ltd. HANBit HMS51232M4L TIMING WAVEFORM OF WRITE CYCLE ( /WE Controlled ) tWC Address tAW tWR(5) /OE tCW(3) /CE tWP(2) tAS(4) /WE tDH tDW High-Z Data In Data Valid tOHZ tOW Data Out High-Z TIMING WAVEFORM OF WRITE CYCLE ( /CE Controlled ) tWC Address tAW tWR(5) tCW(3) /CE tAS(4) /WE tWP(2) tDH tDW Data In Data Valid High-Z Data Out Notes( Write Cycle) 1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low /CE and a low /WE. A write begins at the latest transition among /CE going low and /WE going low : A write ends at the earliest transition among /CE going high and/WE going high. tWP is measured from the beginning of write to the end of write. 3. tCW is measured from the later of /CE going low to the end of write. 7 HANBit Electronics Co.,Ltd. HANBit HMS51232M4L 4. tAS is measured from the address valid to the beginning of wirte. 5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as/CE, or /WE going high. FUNCTIONAL DESCRIPTION /CE /WE /OE MODE I/O PIN SUPPLY CURRENT H X* X Not Select High-Z l SB, l SB1 L H H Output Disable High-Z lCC L H L Read DOUT lCC L L X Write DIN lCC Note: X means Don't Care DATA RETENTION CHARACTERISTICS* (TA = 0 to 70 ) PARAMETER SYMBOL TEST CONDITION YV MAX UNIT 2 5.5 V - 50 µA CC-0.2V VCC for Data Retention VDR /CE Data Retention Current IDR VCC=3.0V, /CE Y MIN YV CC-0.2V X VIN VCC-0.2V or VIN 0.2V Data Retention Set-up Time tSDR See Data Retention 0 - ns Recovery Time tRDR Wave forms(below) 5 - ns * L-Version Only DATA RETENTION WAVEFORM 1 (/CE Controlled) tSDR Data Retention Mode tRDR Vcc 4.5V 2.2V VDR /CE Vss /CE /Vcc- 0.2V 8 HANBit Electronics Co.,Ltd. HANBit HMS51232M4L PACKAGING INFORMATION SIMM Design 108.20 mm 3.18 mm TYP(2x) 16 mm 6.35 mm 1 72 2.03 mm 1.02 mm 6.35 mm 1.27 mm 3.34 mm 95.25 mm 2.54 mm 0.25 mm MAX MIN 1.29±0.08mm Gold: 1.04±0.10 mm 1.27 Solder: 0.914±0.10 mm (Solder & Gold Plating Lead) 9 HANBit Electronics Co.,Ltd. HANBit HMS51232M4L ORDERING INFORMATION 1 2 3 HMS 4 5 6 7 8 512 32 M 4L-15 15ns Access Time HANBit Component, Low Power Memory Modules SIMM x32bit SRAM 512K 1. - Product Line Identifier HANBit ------------------------------------------------------- H 2. - Memory Modules 3. - SRAM 4. - Depth : 512K 5. - Width : x 32bit 6. - Package Code SIMM ------------------------------------------------------- M ZIP ------------------------------------------------------- Z 7. - Number of Memory Components, Low Power -------L 8. - Access time 10 ----------------------------------------------------------- 10ns 12 ----------------------------------------------------------- 12ns 15 ----------------------------------------------------------- 15ns 17 ----------------------------------------------------------- 17ns 20 ----------------------------------------------------------- 20ns 10 HANBit Electronics Co.,Ltd.